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21 Jan 2002

Volume 80, Issue 3, pp. 341-531

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Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots

M. Elkurdi, P. Boucaud, S. Sauvage, O. Kermarrec, Y. Campidelli, D. Bensahel, G. Saint-Girons, and I. Sagnes

Appl. Phys. Lett. 80, 509 (2002); http://dx.doi.org/10.1063/1.1435063 (3 pages) | Cited 23 times

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We have investigated near-infrared p-i-n photodetectors with Ge/Si self-assembled quantum dots. The self-assembled quantum dots were grown by chemical vapor deposition on Si(001). A vertical stacking of 20 layers of quantum dots was inserted into a near-infrared waveguide obtained with a Si0.98Ge0.02 alloy. The samples were processed into ridge waveguides. The photoresponse of the device covers the near-infrared spectral range up to 1.5 μm. At room temperature, a responsivity of 210 mA/W is measured at 1.3 μm and 3 mA/W at 1.5 μm. The photocurrent is compared to the photoluminescence and to the absorption of the quantum dots measured in the waveguide geometry. At room temperature, the onset of the absorption is around 1.9 μm (0.65 eV). The photocurrent is blueshifted as compared to the absorption. © 2002 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.79.Gn Optical waveguides and couplers
72.40.+w Photoconduction and photovoltaic effects
78.67.Hc Quantum dots
81.16.Dn Self-assembly
85.60.Dw Photodiodes; phototransistors; photoresistors

Study on the effect of plasma treatment on TiN films in N2/H2 atmosphere using x-ray reflectivity and secondary ion mass spectroscopy

S. Banerjee, A. Gibaud, D. Chateigner, S. Ferrari, C. Wiemer, and D. T. Dekadjevi

Appl. Phys. Lett. 80, 512 (2002); http://dx.doi.org/10.1063/1.1435406 (3 pages) | Cited 6 times

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We report the effect of plasma treatment on TiN films in N2/H2 atmosphere grown by chemical vapor deposition. The physical parameters and chemical evolution of the film as a function of duration of plasma treatment was studied using grazing incidence x-ray reflectivity (GIXR). From the analysis of GIXR we obtained the electron density profile of the film as a function of its depth. The GIXR data were analyzed using matrix method and distorted wave Born approximation scheme. Comparison of both the analysis schemes gives proper interpretation of the parameters obtained. The results obtained from the analysis of x-ray reflectivity data are supported by time of flight secondary ion mass spectroscopy depth profiling. © 2002 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
52.77.-j Plasma applications
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