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21 Jan 2002

Volume 80, Issue 3, pp. 341-531

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Long-range superluminal pulse propagation in a coaxial photonic crystal

Alain Haché and Louis Poirier

Appl. Phys. Lett. 80, 518 (2002); http://dx.doi.org/10.1063/1.1432760 (3 pages) | Cited 32 times

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We study the propagation of brief electric pulses along a coaxial line having a spatially periodic impedance. The periodicity causes anomalous dispersion and the appearance of a stop band in transmission near 10 MHz. Group velocities of up to three times the speed of light are observed in that spectral region, in accordance with calculations based on an effective index theory. © 2002 American Institute of Physics.
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42.70.Qs Photonic bandgap materials

Compensation of temperature effects in quartz crystal microbalance measurements

Antti Rahtu and Mikko Ritala

Appl. Phys. Lett. 80, 521 (2002); http://dx.doi.org/10.1063/1.1433904 (3 pages) | Cited 11 times

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Quartz crystal microbalance (QCM) is a very powerful method for in situ monitoring of thin film growth processes. However, especially at high temperatures, QCM is very sensitive to already minor temperature changes during the measurement. Here, a method for compensating the temperature effects on the QCM is introduced. In this method, the baseline drift during the growth is calculated using a function obtained by fitting the signal measured before and after the growth. The present method is compared with the earlier published reference crystal method where two closely spaced quartz crystals are used, one being protected against film growth and thus serving as a reference crystal for compensating the temperature effects on the measurement crystal. Both methods were tested with TiO2 and Al2O3 atomic layer deposition processes and the temperature effect was successfully compensated. The differences between these methods are discussed.© 2002 American Institute of Physics.
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06.30.Dr Mass and density
07.10.Lw Balance systems, tensile machines, etc.
68.55.A- Nucleation and growth
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Improved surface imaging with a near-field scanning microwave microscope using a tunable resonator

Sunghyuk Hong, Jooyoung Kim, Wonkyun Park, and Kiejin Lee

Appl. Phys. Lett. 80, 524 (2002); http://dx.doi.org/10.1063/1.1435068 (3 pages) | Cited 9 times

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We report a microwave surface imaging technique using a near-field scanning microwave microscope with a tunable resonance cavity. By tuning the resonance cavity, we could demonstrate improved sensitivity and spatial resolution of the topographic image of YBa2Cu3Oy thin films on MgO substrates. By measuring the shift of resonant frequency and the change of quality factor, we obtained near-field scanning microwave images with a spatial resolution better than 4 μm at an operating frequency of f = 1–1.5 GHz. The principal of operation could be explained by the perturbation theory of a coaxial resonant cavity, considering the radius of the probe tip, the sample–tip distance, and the impedance matching. © 2002 American Institute of Physics.
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07.79.-v Scanning probe microscopes and components
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
74.72.-h Cuprate superconductors
68.37.Uv Near-field scanning microscopy and spectroscopy
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Improved copper detection in hydrofluoric acid by recombination lifetime measurements on dedicated silicon substrates

Matthias Boehringer and Johann Hauber

Appl. Phys. Lett. 80, 527 (2002); http://dx.doi.org/10.1063/1.1436272 (3 pages) | Cited 6 times

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Copper (Cu) adsorption from diluted hydrofluoric acid (DHF) onto bare silicon surfaces strongly depends on the substrate doping. On highly phosphorus-doped silicon, the adsorption rate is up to three orders of magnitude larger than on moderately doped silicon. This may open a gap between Cu-induced semiconductor device degradation and the detection of Cu contaminations in DHF by minority carrier lifetime measurements. Using dedicated copper monitor wafers where a highly phosphorus-doped backsurface ensures strong Cu adsorption while a moderately doped frontsurface enables minority carrier lifetime measurements, we are able to improve the limit of detection for Cu in DHF by two orders of magnitude. © 2002 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena
68.43.Mn Adsorption kinetics
72.80.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors
81.65.-b Surface treatments
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