APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Feb 2002

Volume 80, Issue 5, pp. 707-899

Page 2 of 3 Pages Previous Page Next Page | Jump to Page
back to top
RSS Feeds

Evidence of polymorphous amorphous-to-quasicrystalline phase transformation in Zr66.7Pd33.3 metallic glass

J. Z. Jiang, K. Saksl, J. Saida, A. Inoue, H. Franz, K. Messel, and C. Lathe

Appl. Phys. Lett. 80, 781 (2002); http://dx.doi.org/10.1063/1.1447015 (3 pages) | Cited 16 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The amorphous-to-quasicrystalline phase transformation and the pressure effect on the transformation in a Zr66.7Pd33.3 metallic glass have been investigated by in situ x-ray diffraction measurements using synchrotron radiation. It is found that the transformation is a polymorphous reaction and external pressure enhances the onset temperature for the formation of quasicrystals with a rate of 22 K/GPa while the temperature interval for the stability of quasicrystals remains almost unchanged in the pressure range of 0–4 GPa. The enhancement of the onset temperature for the formation of quasicrystals has been further discussed with the nucleation theory. © 2002 American Institute of Physics.
Show PACS
64.70.K- Solid-solid transitions
61.43.Fs Glasses
61.44.Br Quasicrystals
62.50.-p High-pressure effects in solids and liquids

Orientations of phenyl sidegroups and liquid crystal molecules on a rubbed polystyrene surface

Masahito Oh-e, Seok-Cheol Hong, and Y. R. Shen

Appl. Phys. Lett. 80, 784 (2002); http://dx.doi.org/10.1063/1.1435069 (3 pages) | Cited 21 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Surface–specific sum–frequency vibrational spectroscopy and second-harmonic generation have been used to study the structure of a rubbed polystyrene (PS) surface and the orientation of 4′-n-pentyl-4-cyanobiphenyl (5CB) liquid crystal molecules on it. The results show that the phenyl sidegroups are well aligned by rubbing in the direction perpendicular to rubbing but tilt from the surface normal with a broad distribution. Although the PS surface is nonpolar, the 5CB molecules appear to adsorb on PS preferentially with the terminal cyano group facing the PS surface. © 2002 American Institute of Physics.
Show PACS
61.30.-v Liquid crystals
63.50.-x Vibrational states in disordered systems
42.79.Nv Optical frequency converters

Structural disorder in ion-implanted AlxGa1−xN

S. O. Kucheyev, J. S. Williams, J. Zou, G. Li, C. Jagadish, M. O. Manasreh, M. Pophristic, S. Guo, and I. T. Ferguson

Appl. Phys. Lett. 80, 787 (2002); http://dx.doi.org/10.1063/1.1445478 (3 pages) | Cited 20 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The accumulation of structural damage in AlxGa1−xN films (with x = 0.05–0.60) under heavy-ion bombardment at room temperature is studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy (XTEM). Results show that an increase in Al concentration strongly enhances dynamic annealing processes in AlGaN and suppresses ion-beam-induced amorphization. All AlGaN wafers studied show damage saturation in the bulk for high ion doses. Interestingly, the disorder level in the saturation regime is essentially independent of Al content. In contrast to the case of GaN, no preferential surface disordering is observed in AlGaN during heavy-ion bombardment. XTEM reveals similar implantation-produced defect structures in both GaN and AlGaN. © 2002 American Institute of Physics.
Show PACS
61.72.uj III-V and II-VI semiconductors
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing

Optical transitions in hydrogenated amorphous silicon

Saad M. Malik and Stephen K. O’Leary

Appl. Phys. Lett. 80, 790 (2002); http://dx.doi.org/10.1063/1.1445476 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We study how the various kinds of optical transitions which occur within hydrogenated amorphous silicon contribute to the spectral dependence of the complex component of the dielectric function. While the optical transitions from the valence band band states to the conduction band band states are found to play a dominant role in determining the magnitude of this function for photon energies in excess of the optical gap, other types of optical transitions are also found to be important. We suggest that these other types of optical transitions should not be neglected when interpreting the optical properties of hydrogenated amorphous silicon. © 2002 American Institute of Physics.
Show PACS
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
78.40.Pg Disordered solids
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors
78.55.Ap Elemental semiconductors

Accurate control of the misorientation angles in direct wafer bonding

Frank Fournel, Hubert Moriceau, Bernard Aspar, Karine Rousseau, Joël Eymery, Jean-Luc Rouvière, and Noël Magnea

Appl. Phys. Lett. 80, 793 (2002); http://dx.doi.org/10.1063/1.1446987 (3 pages) | Cited 32 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A direct wafer bonding process has been developed to accurately control both the bonding interface twist and tilt angles between a monocrystalline layer and a bare monocrystalline wafer. This process is based on the bonding of twin surfaces produced by splitting a single wafer, using for instance the Smart Cut® process. A targeted control of ±0.005° is obtained for the twist angle without any crystallographic measurement. Moreover, pure twist-bonded interfaces have been artificially made between two (001) bonded silicon surfaces. © 2002 American Institute of Physics.
Show PACS
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
68.35.Ct Interface structure and roughness
61.72.Mm Grain and twin boundaries
back to top
RSS Feeds

Nitrogen-induced enhancement of the electron effective mass in InNxAs1−x

W. K. Hung, K. S. Cho, M. Y. Chern, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, and T. R. Yang

Appl. Phys. Lett. 80, 796 (2002); http://dx.doi.org/10.1063/1.1436524 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electron effective mass in n-type InNxAs1−x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the “universality” of the BAC model. © 2002 American Institute of Physics.
Show PACS
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Ey III-V and II-VI semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Direct measurement of electron transport in GaN/sapphire interface layer grown by metalorganic chemical vapor deposition

K. S. Kim, M. G. Cheong, H. K. Cho, E. K. Suh, and H. J. Lee

Appl. Phys. Lett. 80, 799 (2002); http://dx.doi.org/10.1063/1.1446991 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Hall effect and capacitance–voltage measurements confirm a conductive thin layer near the GaN/sapphire interface. The temperature-dependent Hall effect of the interface layer was directly measured at temperatures above 100 K, and the results were satisfactorily described by solving the Boltzmann transport equation with various scattering mechanisms. Transport occurs in the conduction band of the layer and is characterized by two dominant scattering mechanisms due to space charge and ionized impurity. The high acceptor density and large space charge effect are related with the dislocations in the interface layer. © 2002 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.20.At Surface states, band structure, electron density of states
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy

Shigeo Yamaguchi, Yasuo Iwamura, Yasuhiro Watanabe, Masayoshi Kosaki, Yohei Yukawa, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki

Appl. Phys. Lett. 80, 802 (2002); http://dx.doi.org/10.1063/1.1446204 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have studied the temperature dependence of electrical properties of crack-free strained AlN/GaN superlattices (SLs) on GaN grown by metalorganic vapor phase epitaxy. A (0001) sapphire substrate was used. A single AlN on GaN and one and five pairs of AlN/GaN superlattices were grown using N2 carrier gas. The thicknesses of AlN and GaN in the superlattices were 1 and 5 nm, respectively. Hall measurements were performed at 295–20 K. The five pairs of AlN/GaN SLs on GaN showed an electron mobility of 9925 cm2/V s and a sheet carrier density of 1.14×1012 cm−2 at 20 K, and 1354 cm2/V s and 1.14×1012 cm−2 at 295 K. © 2002 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
73.63.-b Electronic transport in nanoscale materials and structures
81.05.Ea III-V semiconductors
68.65.Cd Superlattices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.Ct Interface structure and roughness
72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

A. Hierro, A. R. Arehart, B. Heying, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. A. Ringel

Appl. Phys. Lett. 80, 805 (2002); http://dx.doi.org/10.1063/1.1445274 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of growth regime on the deep level spectrum of n-GaN using molecular-beam epitaxy (MBE) was investigated. As the Ga/N flux ratio was decreased towards Ga-lean conditions, the concentration of two acceptor-like levels, at Ec−3.04 and 3.28 eV, increased from 1015 to 1016 cm−3 causing carrier compensation in these films. Thus, these two traps behaved as the dominant compensating centers in MBE n-GaN. Furthermore, the increase in trap concentration also strongly correlated with the degradation of both surface morphology and bulk electron mobility towards Ga-lean conditions, where higher pit densities and lower mobility were observed. These results show that the growth regime directly impacts all morphology, bulk transport, and trap states in n-GaN. © 2002 American Institute of Physics.
Show PACS
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Dn Low-field transport and mobility; piezoresistance
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
back to top
RSS Feeds

Spontaneous chemical ordering and exchange bias in epitaxial Mn0.52Pd0.48/Fe(001) bilayers prepared at room temperature

R. F. C. Farrow, R. F. Marks, M. F. Toney, S. David, A. J. Kellock, J. A. Borchers, K. V. O’Donovan, and David J. Smith

Appl. Phys. Lett. 80, 808 (2002); http://dx.doi.org/10.1063/1.1436286 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report spontaneous chemical ordering of Mn0.52Pd0.48 films, grown by molecular-beam epitaxy on body-centered-cubic Fe(001) films. The bilayers were grown at room temperature onto a seeding structure of Ag(001)/Fe(001)/GaAs(001). X-ray, neutron, and electron diffraction studies confirm extensive chemical ordering of the MnPd to the L10 antiferromagnetic phase which grows as a twinned film with the tetragonal c axis in the film plane. The Fe film exhibits a unidirectional exchange bias and we find no pronounced difference in magnetic structure of the biased Fe layer at the ascending and descending crossing fields where the net moment along the applied field axis is zero. © 2002 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.50.Ee Antiferromagnetics

Quantitative evaluation of magnetocrystalline anisotropy of columnar grains and thickness of initial layer in CoCr-based perpendicular media

Shin Saito, Daiji Hasegawa, Fumikazu Hoshi, David D. Djayaprawira, and Migaku Takahashi

Appl. Phys. Lett. 80, 811 (2002); http://dx.doi.org/10.1063/1.1445467 (3 pages) | Cited 21 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We propose a quantitative analysis using perpendicular torquemetry to evaluate the thickness of the initial layer which consists of nanocrystalline grains, whose c axes are three-dimensionally randomly oriented, and the intrinsic magnetocrystalline anisotropy of the columnar grains with its c plane parallel to the film plane for CoCr-based perpendicular thin-film media. By applying this analysis to CoNiCrTa, CoCrPtTa, and CoCrPtB media, we found that the initial layer can be completely removed in the CoCrPtB medium epitaxially grown on an hcp-structured Co60Cr40 intermediate layer. © 2002 American Institute of Physics.
Show PACS
75.30.Gw Magnetic anisotropy
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Ss Magnetic recording materials
75.50.Tt Fine-particle systems; nanocrystalline materials

Realization and properties of YBa2Cu3O7−δ Josephson junctions by metal masked ion damage technique

D.-J. Kang, G. Burnell, S. J. Lloyd, R. S. Speaks, N. H. Peng, C. Jeynes, R. Webb, J. H. Yun, S. H. Moon, B. Oh, E. J. Tarte, D. F. Moore, and M. G. Blamire

Appl. Phys. Lett. 80, 814 (2002); http://dx.doi.org/10.1063/1.1446998 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have developed a simple process to fabricate high-TC Josephson junctions by a combination of focused ion beam milling and 100 keV H2+ ion implantation. The resistively shunted junction-like current–voltage characteristics were observed in the temperature range of 48 to 4.2 K. The devices showed clear dc and ac Josephson effects. This technique is very promising in terms of simplicity and flexibility of fabrication and has potential for high-density integration. © 2002 American Institute of Physics.
Show PACS
74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices
74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
61.72.up Other materials
61.80.Jh Ion radiation effects

Ultrasensitive hot-electron kinetic-inductance detectors operating well below the superconducting transition

A. V. Sergeev, V. V. Mitin, and B. S. Karasik

Appl. Phys. Lett. 80, 817 (2002); http://dx.doi.org/10.1063/1.1445462 (3 pages) | Cited 22 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
While most experimental studies of kinetic-inductance sensors have been limited so far by the temperature range near the superconducting transition, kinetic-inductance detectors can be very sensitive at temperatures well below the transition, where the number of equilibrium quasiparticles is exponentially small. In this regime, a shift of the quasiparticle chemical potential under radiation results in the change of the kinetic inductance. We modeled the noise characteristics of the kinetic-inductance detectors made from disordered superconducting Nb, NbC, and MoRe films. Low-phonon transparency of the interface between the superconductor and the substrate causes substantial retrapping of phonons providing high quantum efficiency and the operating time of ∼1 ms at ≈1 K. Due to the small number of quasiparticles, the noise equivalent power of the detector determined by the quasiparticle generation–recombination noise can be as small as ∼ 10−19 W/math at He4 temperatures. © 2002 American Institute of Physics.
Show PACS
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Effect of reactive ion etching on the exchange coupling between IrMn and NiFe

Michael A. Seigler

Appl. Phys. Lett. 80, 820 (2002); http://dx.doi.org/10.1063/1.1436276 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of reactive ion etching on the exchange coupling between an antiferromagnetic material (IrMn) and a ferromagnetic material (NiFe) was investigated. Although IrMn is not reactively etched using oxygen or fluorine based chemistries, these chemistries are shown to reduce the exchange coupling between the IrMn and NiFe films by altering the IrMn film composition. These chemistries also have the effect of increasing the resistivity of the IrMn from ∼200 μohm-cm to >1000 μohm-cm. Reactive ion etching is shown to be a good process for reducing the coupling between IrMn–NiFe bilayers used as freelayers in sheet film spinvalves due to its material selectivity and etch stop capability. This process could be used in the processing of exchange-tab-type readback sensors used for magnetic recording. © 2002 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
81.05.Bx Metals, semimetals, and alloys
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
73.61.At Metal and metallic alloys
75.50.Bb Fe and its alloys
75.50.Ee Antiferromagnetics

Development of half-metallic ultrathin Fe3O4 films for spin-transport devices

Susumu Soeya, Jun Hayakawa, Hiromasa Takahashi, Kenchi Ito, Chisato Yamamoto, Ayumu Kida, Hidefumi Asano, and Masaaki Matsui

Appl. Phys. Lett. 80, 823 (2002); http://dx.doi.org/10.1063/1.1446995 (3 pages) | Cited 81 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We attempted to fabricate a high-quality Fe3O4 film while satisfying both low-thermal preparation (≦573 K) and film thinness (≦500 Å). X-ray diffractometry showed that our prepared Fe3O4 film was epitaxially grown onto a MgO (100) substrate. The saturation magnetization, resistivity, and Verwey point were, respectively, ∼ 438 emu/cm3, ∼ 10 000 μ Ω cm, and ∼ 110 K. These values were comparable to those of the Fe3O4 bulk. Our experimental results suggested that a high-quality Fe3O4 film could be obtained even under the crucial conditions of the deposition temperature being low (∼523 K) and the film being ultrathinned (∼100 Å). © 2002 American Institute of Physics.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
73.61.At Metal and metallic alloys
71.30.+h Metal-insulator transitions and other electronic transitions
81.15.Cd Deposition by sputtering
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Dd Nonmetallic ferromagnetic materials

Very large magnetic entropy change near room temperature in LaFe11.2Co0.7Si1.1

Feng-xia Hu, Bao-gen Shen, Ji-rong Sun, Guang-jun Wang, and Zhao-hua Cheng

Appl. Phys. Lett. 80, 826 (2002); http://dx.doi.org/10.1063/1.1447592 (3 pages) | Cited 65 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A very large magnetic entropy change ΔS has been observed in Fe-based cubic NaZn13-type compound LaFe11.2Co0.7Si1.1 near the Curie temperature TC of 274 K. The value of the entropy change is ∼20.3 J/kg K under a magnetic field of 5 T at TC = 274 K. It markedly exceeds that of pure Gd at the corresponding temperature range [V. K. Pecharsky & K. A. Gschneidner, Jr., Phys. Rev. Lett. 78, 4494 (1999)]. The great entropy change produced by the sharp change of magnetization is associated with a large negative lattice expansion at TC. The very large magnetic entropy change and low cost suggest that the compound LaFe11.2Co0.7Si1.1 has great potential for applications as magnetic refrigerants near room temperature. © 2002 American Institute of Physics.
Show PACS
75.30.Sg Magnetocaloric effect, magnetic cooling
75.50.Bb Fe and its alloys
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
65.40.G- Other thermodynamical quantities
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order

Improvement of critical current in MgB2/Fe superconducting wires by a ferromagnetic sheath

J. Horvat, X. L. Wang, S. Soltanian, and S. X. Dou

Appl. Phys. Lett. 80, 829 (2002); http://dx.doi.org/10.1063/1.1447010 (3 pages) | Cited 43 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Transport critical current (Ic) was measured for Fe-sheathed MgB2 round wires. A critical current density of 5.3×104 A/cm2 was obtained at 32 K. Strong magnetic shielding by the iron sheath was observed, resulting in a decrease in Ic by only 15% in a field of 0.6 T at 32 K. In addition to shielding, interaction between the iron sheath and the superconductor resulted in a constant Ic between 0.2 and 0.6 T. This was well beyond the maximum field for effective shielding of 0.2 T. This effect can be used to substantially improve the field performance of MgB2/Fe wires at fields at least three times higher than the range allowed by mere magnetic shielding by the iron sheath. The dependence of Ic on the angle between field and current showed that the transport current does not flow straight across the wire, but meanders between the grains. © 2002 American Institute of Physics.
Show PACS
74.25.Sv Critical currents
74.72.-h Cuprate superconductors
41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems
back to top
RSS Feeds

A model for gate oxide wear out based on electron capture by localized states

Gennadi Bersuker, Anatoli Korkin, Yongjoo Jeon, and Howard R. Huff

Appl. Phys. Lett. 80, 832 (2002); http://dx.doi.org/10.1063/1.1445812 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A model is proposed which addresses the effects of the oxide electric field and anode bias as well as the role of hydrogen in the trap generation process. The oxide wear-out phenomenon is considered as a multistep process initiated by the capture of injected electrons by localized states in SiO2. The captured electron significantly weakens the corresponding Si�O bond, which becomes unstable with respect to the applied electric field and temperature. The hydrogen presented in the oxide (due to anode hydrogen release process) prevents restoration of the broken bond that leads to the generation of a neutral E′ center. The model describes the charge-to-breakdown dependence on the electron fluence and energy, electric field, temperature, and oxide thickness. © 2002 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
77.22.Jp Dielectric breakdown and space-charge effects

Dielectric and ferroelectric properties of tetragonal tungsten bronze Sr2−xCaxNaNb5O15 (x = 0.05–0.35) ceramics

Rong-Jun Xie, Yoshio Akimune, Kazuo Matsuo, Tatsuo Sugiyama, Naoto Hirosaki, and Tadshi Sekiya

Appl. Phys. Lett. 80, 835 (2002); http://dx.doi.org/10.1063/1.1446997 (3 pages) | Cited 40 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports the dielectric and ferroelectric properties of tungsten bronze Sr2−xCaxNaNb5O15 (SCNN, x = 0.05–0.35) ceramics. Two dielectric anomalies and a diffuse ferroelectric transition behavior were appreciably observed in the compositions of x = 0.05–0.25. The incorporation of smaller calcium cations into the crystal structure resulted in an increase in the Curie temperature, from 279 (x = 0.05) to 297 (x = 0.35), and a decrease in the permittivity, from 1353 to 543, at their respective Curie temperatures. Ferroelectricity was observed in the compositions with x = 0.05–0.25, but absent in the compositions with x = 0.30 and 0.35 at room temperature. The maximum spontaneous polarization Ps of 9.1 μC/cm2 and remanent polarization Pr of 3.0 μC/cm2 were achieved in the composition of x = 0.15. © 2002 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Investigation of electron and ion emission from the metal point contact on ferroelectrics

Zdenek Sroubek

Appl. Phys. Lett. 80, 838 (2002); http://dx.doi.org/10.1063/1.1447013 (3 pages)

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Negative ion and electron emission from the point contact, formed by a tungsten tip on lead–zirconium–titanate, has been produced by the application of two successive negative and positive voltage pulses and analyzed by a time-of-flight (TOF) mass spectrometer. No positive ions were detected with the used small pulse amplitudes. The electron emission is strong and in a form of very short (<3.5 ns) pulses. The TOF analysis indicates that both ions and electrons are emitted by Coulomb repulsion of uncompensated surface charges around the W tip. © 2002 American Institute of Physics.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
back to top
RSS Feeds

Observation of a magic discrete family of ultrabright Si nanoparticles

G. Belomoin, J. Therrien, A. Smith, S. Rao, R. Twesten, S. Chaieb, M. H. Nayfeh, L. Wagner, and L. Mitas

Appl. Phys. Lett. 80, 841 (2002); http://dx.doi.org/10.1063/1.1435802 (3 pages) | Cited 119 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate that electrochemically etched, hydrogen capped SinHx clusters with n larger than 20 are obtained within a family of discrete sizes. These sizes are 1.0 (Si29), 1.67 (Si123), 2.15, 2.9, and 3.7 nm in diameter. We characterize the particles via direct electron imaging, excitation and emission optical spectroscopy, and colloidal crystallization. The band gaps and emission bands are measured. The smallest four are ultrabright blue, green, yellow and red luminescent particles. The availability of discrete sizes and distinct emission in the red, green and blue (RGB) range is useful for biomedical tagging, RGB displays, and flash memories. © 2002 American Institute of Physics.
Show PACS
61.46.-w Structure of nanoscale materials
78.55.Ap Elemental semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.07.Bc Nanocrystalline materials
78.66.Db Elemental semiconductors and insulators
81.65.Cf Surface cleaning, etching, patterning
82.45.-h Electrochemistry and electrophoresis
82.70.Dd Colloids

Controlled two-dimensional distribution of nanoparticles by spin-coating method

Young-Kyu Hong, Hanchul Kim, Geunseop Lee, Wondong Kim, Jong-Il Park, Jinwoo Cheon, and Ja-Yong Koo

Appl. Phys. Lett. 80, 844 (2002); http://dx.doi.org/10.1063/1.1445811 (3 pages) | Cited 36 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate that the controlled distribution of nanoparticles can be achieved by employing the spin-coating method. The Co and Ag nanoparticles were uniformly distributed on the Si and SiO2 substrates with this method. The particle density was controllable by varying the concentration of colloids. The spatial distribution of the nanoparticles within the patterned area was also shown to be uniform with small boundary effect, which is favorable for current microelectronics technology. We propose that the spin-coating method can be utilized in developing mass production processes for future nanodevices. © 2002 American Institute of Physics.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.A- Nucleation and growth
61.46.-w Structure of nanoscale materials
85.35.-p Nanoelectronic devices
81.07.Bc Nanocrystalline materials
82.70.Dd Colloids

Nanoscale organic transistors based on self-assembled monolayers

J. H. Schön and Z. Bao

Appl. Phys. Lett. 80, 847 (2002); http://dx.doi.org/10.1063/1.1445804 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF


See Also: RETRACTION

Show Abstract
A device structure is reported for the fabrication of nanoscale organic transistors. In this structure, a self-assembled monolayer is used to define the channel length, as well as acting as the semiconducting material. High current modulation and high current output are demonstrated with 4,4′-dithiolbiphenylene. Various dielectric materials, such as SiO2, Al2O3, and a self-assembled silane monolayer, have been shown to result in high-performance transistors. Finally, nanopatterning can also be achieved by using an insulating alkanethiol to define the channel length of a conventional organic field-effect transistor. © 2002 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

Comparison of catalytically grown and arc-discharge carbon nanotube tips

Lê Thiên-Nga, Jean-Marc Bonard, Richard Gáal, László Forró, and Klara Hernadi

Appl. Phys. Lett. 80, 850 (2002); http://dx.doi.org/10.1063/1.1432748 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have performed a detailed transmission electron microscopy study of the tip of carbon nanotubes prepared by chemical vapor deposition (CVD) and by arc discharge. We found that a large proportion of the CVD-grown tubes have well-formed caps but that the graphitization of the walls is far from perfect. The tip shapes are also more rounded and the tip radius is higher when compared to arc-discharge tube tips. These features are discussed in relation with the growth mechanism and with the consequences they might have for applications in scanning probe microscopies. © 2002 American Institute of Physics.
Show PACS
61.46.-w Structure of nanoscale materials
81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Diode and transistor behaviors of three-terminal ballistic junctions

H. Q. Xu

Appl. Phys. Lett. 80, 853 (2002); http://dx.doi.org/10.1063/1.1447316 (3 pages) | Cited 60 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, Vc, from the central branch as a function of the voltage, Vl, applied to the left branch shows a diode characteristic: Vc approximately follows Vl linearly when Vl is negative, and saturates at a small positive value when Vl becomes positive. It is also found that the saturation level of Vc as well as the threshold value of Vl, beyond which Vc saturates, can be modulated by application of a voltage, Vr, to the right branch contact of the TBJ. Thus, the TBJ can also be used as a transistor. TBJ diodes and TBJ transistors with dimensions on the order of sub 100 nm, or much less, can be made from standard high-quality electronic materials with state-of-the-art nanofabrication technology. © 2002 American Institute of Physics.
Show PACS
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Kk Junction diodes
85.35.-p Nanoelectronic devices
Page 2 of 3 Pages Previous Page Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close