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4 Feb 2002

Volume 80, Issue 5, pp. 707-899

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Nitrogen-induced enhancement of the electron effective mass in InNxAs1−x

W. K. Hung, K. S. Cho, M. Y. Chern, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, and T. R. Yang

Appl. Phys. Lett. 80, 796 (2002); http://dx.doi.org/10.1063/1.1436524 (3 pages) | Cited 13 times

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The electron effective mass in n-type InNxAs1−x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the “universality” of the BAC model. © 2002 American Institute of Physics.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Ey III-V and II-VI semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Direct measurement of electron transport in GaN/sapphire interface layer grown by metalorganic chemical vapor deposition

K. S. Kim, M. G. Cheong, H. K. Cho, E. K. Suh, and H. J. Lee

Appl. Phys. Lett. 80, 799 (2002); http://dx.doi.org/10.1063/1.1446991 (3 pages) | Cited 2 times

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Hall effect and capacitance–voltage measurements confirm a conductive thin layer near the GaN/sapphire interface. The temperature-dependent Hall effect of the interface layer was directly measured at temperatures above 100 K, and the results were satisfactorily described by solving the Boltzmann transport equation with various scattering mechanisms. Transport occurs in the conduction band of the layer and is characterized by two dominant scattering mechanisms due to space charge and ionized impurity. The high acceptor density and large space charge effect are related with the dislocations in the interface layer. © 2002 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.20.At Surface states, band structure, electron density of states
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy

Shigeo Yamaguchi, Yasuo Iwamura, Yasuhiro Watanabe, Masayoshi Kosaki, Yohei Yukawa, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki

Appl. Phys. Lett. 80, 802 (2002); http://dx.doi.org/10.1063/1.1446204 (3 pages) | Cited 8 times

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We have studied the temperature dependence of electrical properties of crack-free strained AlN/GaN superlattices (SLs) on GaN grown by metalorganic vapor phase epitaxy. A (0001) sapphire substrate was used. A single AlN on GaN and one and five pairs of AlN/GaN superlattices were grown using N2 carrier gas. The thicknesses of AlN and GaN in the superlattices were 1 and 5 nm, respectively. Hall measurements were performed at 295–20 K. The five pairs of AlN/GaN SLs on GaN showed an electron mobility of 9925 cm2/V s and a sheet carrier density of 1.14×1012 cm−2 at 20 K, and 1354 cm2/V s and 1.14×1012 cm−2 at 295 K. © 2002 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.63.-b Electronic transport in nanoscale materials and structures
81.05.Ea III-V semiconductors
68.65.Cd Superlattices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.Ct Interface structure and roughness
72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

A. Hierro, A. R. Arehart, B. Heying, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. A. Ringel

Appl. Phys. Lett. 80, 805 (2002); http://dx.doi.org/10.1063/1.1445274 (3 pages) | Cited 23 times

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The effect of growth regime on the deep level spectrum of n-GaN using molecular-beam epitaxy (MBE) was investigated. As the Ga/N flux ratio was decreased towards Ga-lean conditions, the concentration of two acceptor-like levels, at Ec−3.04 and 3.28 eV, increased from 1015 to 1016 cm−3 causing carrier compensation in these films. Thus, these two traps behaved as the dominant compensating centers in MBE n-GaN. Furthermore, the increase in trap concentration also strongly correlated with the degradation of both surface morphology and bulk electron mobility towards Ga-lean conditions, where higher pit densities and lower mobility were observed. These results show that the growth regime directly impacts all morphology, bulk transport, and trap states in n-GaN. © 2002 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Dn Low-field transport and mobility; piezoresistance
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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