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11 Feb 2002

Volume 80, Issue 6, pp. 905-1104

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Noise properties of an individual and two crossing multiwalled carbon nanotubes

H. Ouacha, M. Willander, H. Y. Yu, Y. W. Park, M. S. Kabir, S. H. Magnus Persson, L. B. Kish, and A. Ouacha

Appl. Phys. Lett. 80, 1055 (2002); http://dx.doi.org/10.1063/1.1447313 (3 pages) | Cited 16 times

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The noise properties at room temperature of multiwalled carbon nanotubes under forward bias, for frequencies between 10 Hz–10 kHz, have been investigated. The noise measurements were made for one individual multiwalled carbon nanotube (1 MW) and two crossing multiwalled carbon nanotubes (2 CMW). The excess noise found in 1 MW is consistently 1/f-like. However, 2 CMW shows higher noise level, and the noise spectrum has an unusual dependence on the current. The main origin of noise in 2 CMW was attributed to the diffusion noise. © 2002 American Institute of Physics.
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73.63.Fg Nanotubes
72.70.+m Noise processes and phenomena
72.80.Rj Fullerenes and related materials

One-dimensional heterostructures in semiconductor nanowhiskers

M. T. Björk, B. J. Ohlsson, T. Sass, A. I. Persson, C. Thelander, M. H. Magnusson, K. Deppert, L. R. Wallenberg, and L. Samuelson

Appl. Phys. Lett. 80, 1058 (2002); http://dx.doi.org/10.1063/1.1447312 (3 pages) | Cited 254 times

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We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore. © 2002 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.46.-w Structure of nanoscale materials
79.40.+z Thermionic emission
68.37.Lp Transmission electron microscopy (TEM)
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)

Templated electrodeposition of patterned soft magnetic films

O. Azzaroni, P. L. Schilardi, and R. C. Salvarezza

Appl. Phys. Lett. 80, 1061 (2002); http://dx.doi.org/10.1063/1.1448852 (3 pages) | Cited 8 times

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Fabrication of patterned magnetic CoNiFe films by the thiol-assisted templated electrodeposition method is described. This method involves electrodeposition of the alloy components from their ionic species in solution on a dodecanethiol-covered Cu template. The ultrathin alkanethiol layer enables nano/micrometer pattern transfer and easy detachment of the magnetic film from the template. This method opens the possibility of fabricating nano/micropatterned chemically complex alloy structures in an extremely easy way with very few intermediate steps. © 2002 American Institute of Physics.
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81.15.Pq Electrodeposition, electroplating
82.45.Qr Electrodeposition and electrodissolution
75.50.Bb Fe and its alloys
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Tt Fine-particle systems; nanocrystalline materials
81.07.Bc Nanocrystalline materials
81.05.Bx Metals, semimetals, and alloys

Electrical properties and devices of large-diameter single-walled carbon nanotubes

Ali Javey, Moonsub Shim, and Hongjie Dai

Appl. Phys. Lett. 80, 1064 (2002); http://dx.doi.org/10.1063/1.1448850 (3 pages) | Cited 52 times

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Individual large-diameter (∼3 to 5 nm) semiconducting single-walled carbon nanotubes (SWNTs) are found to exhibit ambipolar field-effect transistor (FET) behavior, with easily accessible n- and p-conduction channels by simple electrostatic gates. The effects of temperature and ultraviolet radiation on their electrical properties are elucidated, shedding light into the intrinsic behavior of SWNTs in this relatively large-diameter regime. The ambipolar SWNT-FETs can be readily used as building blocks for functional nanoelectronic devices such as voltage inverters that operate under ambient conditions. © 2002 American Institute of Physics.
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73.63.Fg Nanotubes
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
85.35.Kt Nanotube devices
85.30.Tv Field effect devices

Stable bit formation in polyimide Langmuir–Blodgett film using an atomic force microscope

K. Yano and T. Ikeda

Appl. Phys. Lett. 80, 1067 (2002); http://dx.doi.org/10.1063/1.1447007 (3 pages) | Cited 10 times

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Nanometer scale recording bits were stably fabricated in polyimide (PI) Langmuir–Blodgett (LB) films on atomically flat Au (111) surfaces using an atomic force microscope (AFM). The bits are written by voltage application through the AFM probe only until the conductance increases. This method eliminates the influence of the variation in the transition time and therefore the degradation of the tip of the probe. 1 Mbit stable writing can be realized. The overall error rate is less than 2×10−3. The results show that an AFM based memory system with PI LB films is a hopeful candidate to realize a scanning probe microscope based memory system. © 2002 American Institute of Physics.
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68.37.Ps Atomic force microscopy (AFM)
73.61.Ph Polymers; organic compounds
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces

Photoluminescence spectroscopy of single silicon quantum dots

Jan Valenta, Robert Juhasz, and Jan Linnros

Appl. Phys. Lett. 80, 1070 (2002); http://dx.doi.org/10.1063/1.1448400 (3 pages) | Cited 70 times

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Photoluminescence (PL) from single silicon quantum dots have been recorded and spectrally resolved at room temperature. The Si nanocrystals (NCs) were fabricated using electron-beam lithography and reactive ion etching resulting in Si nanopillars that were subsequently oxidized to produce luminescent silicon cores. The NCs are organized in a regular matrix which enables repeated observation of a specific single NC. By reflection and PL imaging, the emission is shown to originate from the Si nanopillars. The single-NC PL spectrum has a single band with a width of ∼ 130 meV. The emission is polarized in arbitrary directions suggestive of geometrical differences in the shape of the nanocrystals. The quantum efficiency of the PL has been found to reach as much as 35% for some nanocrystals. Our experiments support the quantum-confinement model for the PL emission of Si nanocrystals and elucidate the critical role of defect passivation. © 2002 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Ap Elemental semiconductors
81.07.Ta Quantum dots
73.21.La Quantum dots
81.65.Rv Passivation
81.65.Cf Surface cleaning, etching, patterning

Strain distribution control on the silicon wafer scale for advanced nanostructure fabrication

H. Omi, D. J. Bottomley, and T. Ogino

Appl. Phys. Lett. 80, 1073 (2002); http://dx.doi.org/10.1063/1.1448855 (3 pages) | Cited 21 times

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Looking to the long-term future of Si semiconductor technology, we propose, fabricate, and demonstrate strain distribution control on the planar Si wafer scale for advanced nanostructure self-assembly. Oxygen ions are implanted through patterned layers on the Si wafer; the sample is then annealed at 1325 °C to produce bulk oxide inclusions which yield a strain distribution. Strained epitaxial growth of Ge on the Si(001) substrate surface at 550 °C in ultrahigh vacuum produces three-dimensional islands whose location and size distribution are well controlled. The degree of localization control is in agreement with simulations of the elastic strain distribution. © 2002 American Institute of Physics.
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81.16.Dn Self-assembly
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
62.20.-x Mechanical properties of solids

Direct observation of local hot electron transport through Al2O3 tunnel junctions

O. Kurnosikov, J. E. A. de Jong, H. J. M. Swagten, and W. J. M. de Jonge

Appl. Phys. Lett. 80, 1076 (2002); http://dx.doi.org/10.1063/1.1448160 (3 pages) | Cited 6 times

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A modified ballistic electron emission microscopy (BEEM) technique using local transport of hot electrons through a buried interface, was successfully applied to study the Al2O3 barrier in the Co/Al2O3/Ru tunnel junction. This technique enabled us to straightforwardly measure an effective barrier height of 1.7 eV and to observe the rise of the barrier height due to continuous current injection into a single point of the junction attributed to charging effects and/or degradation of the barrier structure. Scanning over an area of 510 nm×510 nm showed a spatial inhomogenity of the barrier resulting in different dependencies of the BEEM current on the energy of the injected electrons. © 2002 American Institute of Physics.
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73.40.Rw Metal-insulator-metal structures
73.50.Fq High-field and nonlinear effects

Branchy alumina nanotubes

Jianping Zou, Lin Pu, Ximao Bao, and Duan Feng

Appl. Phys. Lett. 80, 1079 (2002); http://dx.doi.org/10.1063/1.1448655 (3 pages) | Cited 31 times

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Branchy alumina nanotubes (bANTs) have been shown to exist in aluminum oxide. Electron-beam evaporated 400 nm Al film on Si substrate is stepwise anodized in dilute sulfuric acid under the constant dc voltage 40 V at 10.0 °C. This electrochemical-anodizing route resulted in the formation of individual bANTs. Transmission electron microscopy showed that the length of the bANTs was around 450 nm, and the inner diameter was around 10–20 nm. We deduced that the bANTs, the completely detached multibranchy cells of anodic porous alumina (APA) film, should be evolved from the stagnant cells of the APA mother film. The bANTs may be used as templates in fabrication of individual branchy nanoscale cables, jacks, and heterojunctions. The proposed formation mechanisms of the bANTs and the stagnant cells should give some insights into the long-standing problem of APA film, i.e., the self-ordering mechanism of the cells arrangement in porous anodization of aluminum. © 2002 American Institute of Physics.
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81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.45.-h Electrochemistry and electrophoresis
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High-performance micromachined unimorph actuators based on electrostrictive poly(vinylidene fluoride–trifluoroethylene) copolymer

T.-B. Xu, Z.-Y. Cheng, and Q. M. Zhang

Appl. Phys. Lett. 80, 1082 (2002); http://dx.doi.org/10.1063/1.1448661 (3 pages) | Cited 27 times

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We report on the performance of micromachined unimorph actuators [(polymer micromachined actuator PMAT)] based on the electrostrictive poly(vinylidene fluoride–trifluoroethylene) [P(VDF–TrFE)] copolymer. Because of the high electrostrictive strain and high elastic energy density ( ∼ 1 J/cm3) of the active polymer [the electrostrictive P(VDF–TrFE)], the PMAT exhibits a very high stroke level with high load capability and high displacement voltage ratio. In addition, the experimental data also demonstrate that the PMAT is capable of operating over a broad frequency range (>100 kHz). The PMAT performance was modeled and the agreement between the modeling results and experimental data confirms that the response of the PMAT indeed follows the design parameters. © 2002 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
07.07.Tw Servo and control equipment; robots
81.20.Wk Machining, milling

Stability of field emission current from porous n-GaAs(110)

V. N. Tondare, M. Naddaf, A. B. Bhise, S. V. Bhoraskar, D. S. Joag, A. B. Mandale, and S. R. Sainkar

Appl. Phys. Lett. 80, 1085 (2002); http://dx.doi.org/10.1063/1.1436535 (3 pages) | Cited 4 times

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Field electron emission from porous GaAs has been investigated. The emitter was prepared by anodic etching of n-GaAs (110) in 0.1 M HCl solution. The as-etched porous GaAs shows nonlinear Fowler–Nordheim (FN) characteristics, with a low onset voltage. The emitter, after operating for 6 h at the residual gas pressure of 1×10−8 mbar, shows a linear FN characteristics with a relatively high onset voltage and poor field emission current stability as compared to the as-etched emitter. The change in the behavior was attributed to the residual gas ion bombardment during field electron emission. X-ray photoelectron spectroscopic investigations were carried out on as-etched sample and the one which was studied for field emission. The studies indicate that the as-etched surface contains As2O3 and the surface after field electron emission for about 6 h becomes gallium rich. The presence of As2O3 seems to be a desirable feature for the stable field emission current. © 2002 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates

C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gundlach, T. N. Jackson, M. G. Kane, I. G. Hill, M. S. Hammond, J. Campi, B. K. Greening, J. Francl, and J. West

Appl. Phys. Lett. 80, 1088 (2002); http://dx.doi.org/10.1063/1.1448659 (3 pages) | Cited 360 times

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We have fabricated organic thin-film transistor (OTFT)-driven active matrix liquid crystal displays on flexible polymeric substrates. These small displays have 16×16 pixel polymer-dispersed liquid crystal arrays addressed by pentacene active layer OTFTs. The displays were fabricated using a low-temperature process (<110 °C) on flexible polyethylene naphthalate film and are operated as reflective active matrix displays. © 2002 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
85.65.+h Molecular electronic devices
85.60.Pg Display systems
61.30.Pq Microconfined liquid crystals: droplets, cylinders, randomly confined liquid crystals, polymer dispersed liquid crystals, and porous systems
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Laser nitriding of iron with laser pulses from femtosecond to nanosecond pulse duration

P. Schaaf, M. Han, K.-P. Lieb, and E. Carpene

Appl. Phys. Lett. 80, 1091 (2002); http://dx.doi.org/10.1063/1.1448167 (3 pages) | Cited 9 times

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Pulsed-laser nitriding is an attractive method to improve metal surface properties, such as hardness, wear, and corrosion resistance, with the advantage of simple experimental setup, rapid treatment, and precise process control. Here, the dependence of the laser nitriding process on the laser pulse duration was investigated over five orders of magnitude in a series of experiments employing pulsed lasers ranging from nanosecond excimer laser pulses (55 ns) and Nd-doped yttrium aluminum garnet (Nd:YAG) laser pulses (8 ns), to ultrashort Ti:sapphire laser pulses (150 fs). The results revealed that for all laser pulse durations and different wavelengths a large nitriding effect was observed. The excimer laser shows the highest nitriding efficiency. The basic processes for the femtosecond pulsed laser are not well understood but seem to result at least partly from processes within the plasma, whereas nanosecond nitriding is based mainly on processes within the liquid/solid surface. © 2002 American Institute of Physics.
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81.05.Bx Metals, semimetals, and alloys
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
68.35.Gy Mechanical properties; surface strains
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
62.20.Qp Friction, tribology, and hardness

Discrete rocket effect and its implication for micron grain acceleration

Zhehui Wang

Appl. Phys. Lett. 80, 1094 (2002); http://dx.doi.org/10.1063/1.1447320 (3 pages) | Cited 1 time

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The rocket equation breaks down for micron grains because the number of particles per grain is small compared with that within macroscopic objects. Therefore, the discrete rocket effect replaces the classical continuous rocket effect for micron grains. The discrete rocket effect is due to the fact that ejected mass from a micron grain can be comparable to the total mass for these intermediate size objects. Electron beam and laser ablation are possible means to accelerate micron grains to 106 m/s and higher velocity. © 2002 American Institute of Physics.
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95.30.Wi Dust processes (condensation, evaporation, sputtering, mantle growth, etc.)
95.30.Qd Magnetohydrodynamics and plasmas
98.38.Cp Interstellar dust grains; diffuse emission; infrared cirrus
52.27.Lw Dusty or complex plasmas; plasma crystals
52.70.-m Plasma diagnostic techniques and instrumentation
52.40.Mj Particle beam interactions in plasmas
52.25.Fi Transport properties
52.38.Dx Laser light absorption in plasmas (collisional, parametric, etc.)
28.52.Cx Fueling, heating and ignition
52.38.Mf Laser ablation

Unusual photon tunneling in the presence of a layer with a negative refractive index

Z. M. Zhang and C. J. Fu

Appl. Phys. Lett. 80, 1097 (2002); http://dx.doi.org/10.1063/1.1448172 (3 pages) | Cited 103 times

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Recent experiments give evidence of a negative refractive index at microwave frequencies in a microstructured material. This discovery may allow some unique features associated with negative- refraction materials to be observed and applied. This letter describes the calculated results for photon tunneling via evanescent fields in the presence of a layer of negative-refraction material, also known as a left-handed material (LHM) in contrast to the conventional right-handed materials (RHMs). We show that photons may tunnel through a much greater distance when a LHM that has the same magnitudes of refractive index, relative permeability, and thickness as those of the RHM (which could also be air or vacuum) is included between two semi-infinite media. © 2002 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Wc Optical coatings
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Atomic scale heating in cathodic arc plasma deposition

André Anders

Appl. Phys. Lett. 80, 1100 (2002); http://dx.doi.org/10.1063/1.1448390 (3 pages) | Cited 34 times

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Energetic deposition using a filtered cathodic arc plasma is known to lead to very adherent and dense films. Interface mixing, subplantation depth, texture, and stress of the growing film are often studied as a function of the kinetic energy of condensing ions. Ions also have potential energy contributing to atomic scale heating, secondary electron emission, and potential sputtering, thereby affecting all film properties. We will show kinetic and potential energies of ions in cathodic arc plasmas. These energies are greater than the binding energy, surface binding energy, and activation energy of surface diffusion. The role of potential energy on film growth is not limited to the cathodic arc plasma deposition process. © 2002 American Institute of Physics.
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52.77.Fv High-pressure, high-current plasmas (plasma spray, arc welding, etc.)
81.15.Rs Spray coating techniques
68.35.Fx Diffusion; interface formation
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.50.-b Plasma production and heating
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Erratum: “Visualization of single-walled carbon nanotubes electrical networks by scanning force microspy” [Appl. Phys. Lett. 79, 2979 (2001)]

P. J. de Pablo, C. Gómez-Navarro, A. Gil, J. Colchero, M. T. Martínez, A. M. Benito, W. K. Maser, J. Gómez-Herrero, and A. M. Baró

Appl. Phys. Lett. 80, 1103 (2002); http://dx.doi.org/10.1063/1.1448652 (1 page)

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Abstract Unavailable
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85.35.Kt Nanotube devices
73.63.Fg Nanotubes
68.37.Ps Atomic force microscopy (AFM)
68.35.B- Structure of clean surfaces (and surface reconstruction)
99.10.Cd Errata
FREE

Erratum: “Backscattering in carbon nanotubes: Role of quantum interference effects” [Appl. Phys. Lett. 79, 3690 (2001)]

Stephan Roche, François Triozon, and Angel Rubio

Appl. Phys. Lett. 80, 1104 (2002); http://dx.doi.org/10.1063/1.1446202 (1 page)

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Abstract Unavailable
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73.63.Fg Nanotubes
73.23.-b Electronic transport in mesoscopic systems
99.10.Cd Errata
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