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18 Feb 2002

Volume 80, Issue 7, pp. 1111-1310

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Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

John S. Suehle, Eric M. Vogel, Peter Roitman, John F. Conley, Allan H. Johnston, Bin Wang, Joseph B. Bernstein, and C. E. Weintraub

Appl. Phys. Lett. 80, 1282 (2002); http://dx.doi.org/10.1063/1.1448859 (3 pages) | Cited 19 times

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Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO2 films subjected to 60Co gamma irradiation and heavy ions of 823 MeV 129Xe (linear energy transfer = 59 MeV-cm2/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.© 2002 American Institute of Physics.
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77.55.-g Dielectric thin films
73.61.Ng Insulators
61.82.Ms Insulators
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Jp Dielectric breakdown and space-charge effects
61.80.Jh Ion radiation effects
61.80.Ed γ-ray effects

Excimer-laser-irradiation-induced effects in C60 films for photovoltaic applications

K. L. Narayanan, M. Yamaguchi, and H. Azuma

Appl. Phys. Lett. 80, 1285 (2002); http://dx.doi.org/10.1063/1.1450047 (3 pages) | Cited 3 times

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Thin films of fullerene C60 deposited by the molecular-beam epitaxy method have been subjected to a 248 nm excimer laser for various timings. Reduction in the electrical resistance of the films and the spectral evolution of the D and G bands in the Raman spectra, due to the sharp tendency towards graphitization accompanied by an increasing level of structural disorder, are observed during laser irradiation. Based on the above results, an attempt has been carried out on these irradiated C60 films to make a device sandwiched with n-type Si, and the photovoltaic parameters are reported as a function of the laser exposure times. © 2002 American Institute of Physics.
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61.82.Rx Nanocrystalline materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
73.50.Pz Photoconduction and photovoltaic effects
78.30.Na Fullerenes and related materials
78.66.Tr Fullerenes and related materials
81.05.ub Fullerenes and related materials
68.55.-a Thin film structure and morphology
72.40.+w Photoconduction and photovoltaic effects
72.80.Rj Fullerenes and related materials
73.61.Wp Fullerenes and related materials

Effect of LiF/metal electrodes on the performance of plastic solar cells

Christoph J. Brabec, Sean E. Shaheen, Christoph Winder, N. Serdar Sariciftci, and Patrick Denk

Appl. Phys. Lett. 80, 1288 (2002); http://dx.doi.org/10.1063/1.1446988 (3 pages) | Cited 320 times

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The insertion of thin interlayers of LiF under the negative metal electrode (Al and Au) of bulk heterojunction solar cells significantly enhances the fill factor and stabilizes high open circuit voltages. Compared to devices without the LiF interfacial layer, the white light efficiencies increase by over 20% up to ηeff ∼ 3.3%. Substitution of the LiF by another insulating interlayer SiOx results in lower overall efficiencies. In the case of a LiF/Au electrode, substantial efficiency enhancement is observed compared to a pristine Au electrode and white light efficiencies up to ηeff ∼ 2.3% are reported.© 2002 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.61.Wp Fullerenes and related materials
81.05.ub Fullerenes and related materials

Nonvolatile field programmable spin-logic for reconfigurable computing

R. Richter, L. Bär, J. Wecker, and G. Reiss

Appl. Phys. Lett. 80, 1291 (2002); http://dx.doi.org/10.1063/1.1449536 (3 pages) | Cited 27 times

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We have fabricated field programmable spin-logic gates based on spin-dependent tunneling (SDT) elements. Here we show their feasibility down to a width of 0.6 μm of the SDT elements that form spin-logic gates. We further demonstrate the clocked operation of a hybrid spin-logic gate consisting of SDT elements and a semiconductor-based sense amplifier. Apart from the nonvolatility of the inputs, the output and the programming information, the experimentally demonstrated concept seems to be suitable for reconfigurable computing operations. © 2002 American Institute of Physics.
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85.75.Ff Reprogrammable magnetic logic
84.30.Sk Pulse and digital circuits
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Excess current investigations of silicon p+–i–n+ diodes

G. Reitemann and E. Kasper

Appl. Phys. Lett. 80, 1294 (2002); http://dx.doi.org/10.1063/1.1450048 (3 pages) | Cited 3 times

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Si p+–i–n+ junctions, as used in modern devices, are investigated for excess current contributions in their forward characteristics. The excess current is caused by tunneling through band-gap states. The current characteristics of epitaxially grown junctions are studied experimentally at a temperature range from −60 to 100 °C, thereby the temperature dependence of the excess current is described and explained by the ratio of built-in voltage divided by the tunneling reference voltage Vt0. The voltage dependence is investigated by the curvature coefficient, the value of which is described by a modified Chynoweth theory. [A. G. Chynoweth, W. L. Feldmann, and R. A. Logan, Phys. Rev. 121, 684 (1961)]. © 2002 American Institute of Physics.
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85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
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