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18 Feb 2002

Volume 80, Issue 7, pp. 1111-1310

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Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties

Yong Jai Cho, N. V. Nguyen, C. A. Richter, J. R. Ehrstein, Byoung Hun Lee, and Jack C. Lee

Appl. Phys. Lett. 80, 1249 (2002); http://dx.doi.org/10.1063/1.1448384 (3 pages) | Cited 55 times

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The optical properties of a set of high-k dielectric HfO2 films annealed at various high temperatures were determined by spectroscopic ellipsometry. The results show that the characteristics of the dielectric functions of these films are strongly affected by high temperature annealing. For a sample annealed at 600 °C, the film becomes polycrystalline, and its dielectric function displays a distinctive peak at 5.9 eV. On the other hand, the film remains amorphous without the 5.9 eV feature after 500 °C annealing. To model the dielectric functions, the Tauc–Lorentz dispersion was successfully adopted for these amorphous and polycrystalline films. The absorption edge was observed to shift to a higher energy at a high temperature annealing. Defects in the films were shown to relate to the appearance of a band tail above the absorption edge, and they appear to diminish with high temperature annealing. © 2002 American Institute of Physics.
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78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.55.-g Dielectric thin films

NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability

Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto, Toshirou Kidera, and Shin Yokoyama

Appl. Phys. Lett. 80, 1252 (2002); http://dx.doi.org/10.1063/1.1447314 (3 pages) | Cited 15 times

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Extremely thin (equivalent oxide thickness, Teq = 1.2 nm) silicon-nitride high-k (ϵr = 7.2) gate dielectrics have been formed at low temperatures (⩽550 °C) by an atomic-layer-deposition (ALD) technique with subsequent NH3 annealing at 550 °C. A remarkable reduction in leakage current, especially in the low dielectric voltage region, which will be the operating voltage for future technologies, has made it a highly potential gate dielectric for future ultralarge-scale integrated devices. Suppressed soft breakdown events are observed in ramped voltage stressing. This suppression is thought to be due to a strengthened structure of Si–N bonds and the smoothness and uniformity at the poly-Si/ALD-silicon-nitride interface. © 2002 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.-a Thin film structure and morphology
61.72.Cc Kinetics of defect formation and annealing
85.30.Tv Field effect devices
77.22.Jp Dielectric breakdown and space-charge effects
68.35.Ct Interface structure and roughness
68.35.B- Structure of clean surfaces (and surface reconstruction)

Barium–strontium–titanate thin films for application in radio-frequency-microelectromechanical capacitive switches

S. W. Kirchoefer, E. J. Cukauskas, N. S. Barker, H. S. Newman, and W. Chang

Appl. Phys. Lett. 80, 1255 (2002); http://dx.doi.org/10.1063/1.1450263 (3 pages) | Cited 13 times

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In this letter we report the application of barium–strontium–titanate (BST) thin film oxides as the dielectric layer in radio-frequency-microelectromechanical system (rf-MEMS) capacitive switches. BST thin films deposited at ambient temperature by off-axis sputtering have been employed for application in rf-MEMS switches. Their dielectric properties have been characterized in the frequency range from 1 to 20 GHz both on magnesium oxide and on gold metal films. Switches have been fabricated which demonstrate promising on-state capacitance and good dielectric breakdown properties. Dielectric breakdown in excess of 400 kV/cm has been measured on switches cycled in excess of 2000 times during testing. © 2002 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.32.Dd Connectors, relays, and switches
84.32.Tt Capacitors
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.22.Jp Dielectric breakdown and space-charge effects
81.15.Cd Deposition by sputtering

Thickness-dependent phase evolution of polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

Maxim B. Kelman, Lawrence F. Schloss, Paul C. McIntyre, Bryan C. Hendrix, Steven M. Bilodeau, and Jeffrey F. Roeder

Appl. Phys. Lett. 80, 1258 (2002); http://dx.doi.org/10.1063/1.1449532 (3 pages) | Cited 24 times

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The structural and electrical properties of metalorganic chemical vapor deposition-grown Pb(Zr0.35Ti0.65)O3 thin films ranging in thickness from 700 to 4000 Å have been investigated. Cross-sectional scanning electron microscopy showed that these films are columnar, with grains extending through the thickness of the film. High-resolution x-ray diffraction showed that while the thickest films are tetragonal, with reflections corresponding to a-type and c-type domains, films thinner than 1500 Å are not. Electron backscatter diffraction and hysteresis loop measurements showed that the thinnest films are ferroelectric and have a rhombohedral crystal structure. © 2002 American Institute of Physics.
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68.55.-a Thin film structure and morphology
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.20.Kz Other electron-impact emission phenomena
77.80.Dj Domain structure; hysteresis
61.66.Fn Inorganic compounds

Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon

V. V. Afanas’ev and A. Stesmans

Appl. Phys. Lett. 80, 1261 (2002); http://dx.doi.org/10.1063/1.1447006 (3 pages) | Cited 25 times

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Optical injection of electron-hole pairs in 3–5 nm thick layers of SiO2, Al2O3, ZrO2 and their stacks on (100)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides (Al2O3, ZrO2), the positive charge exhibits a remarkable stability to neutralization by electrons which is neither observed in thicker layers of the same oxides nor in thermal SiO2. Most of the positive charge is associated with diamagnetic centers (possibly, protons). © 2002 American Institute of Physics.
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73.61.Ng Insulators
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
71.55.Ht Other nonmetals
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