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18 Feb 2002

Volume 80, Issue 7, pp. 1111-1310

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Photoconductivity in confined gallium

V. A. Fedotov, M. Woodford, I. Jean, and N. I. Zheludev

Appl. Phys. Lett. 80, 1297 (2002); http://dx.doi.org/10.1063/1.1448851 (3 pages) | Cited 5 times

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We report on the observation of photoconductivity in elemental gallium confined at an interface with glass. The effect is associated with a fully reversible light-induced structural transformation in the metal, which affects a surface layer only a few nanometers thick. The effect has the potential for applications in optically fast, broadband photodetectors. © 2002 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
61.82.Bg Metals and alloys
73.61.At Metal and metallic alloys
72.40.+w Photoconduction and photovoltaic effects
64.70.K- Solid-solid transitions
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Thermoelastic loss in microscale oscillators

B. H. Houston, D. M. Photiadis, M. H. Marcus, J. A. Bucaro, Xiao Liu, and J. F. Vignola

Appl. Phys. Lett. 80, 1300 (2002); http://dx.doi.org/10.1063/1.1449534 (3 pages) | Cited 45 times

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A simple model of thermoelastic dissipation is proposed for general, free standing microelectromechanical (MEMS) and nanoelectromechanical (NEMS) oscillators. The theory defines a flexural modal participation factor, the fraction of potential energy stored in flexure, and approximates the internal friction by assuming the energy loss to occur solely via classical thermoelastic dissipation of this component of the motion. The theory is compared to the measured internal friction of a high Q mode of a single-crystal silicon double paddle oscillator. The loss at high temperature (above 150 K) is found to be in good agreement with the theoretical prediction. The importance of this dissipation mechanism as a function of scale is briefly discussed. We find that the relative importance of this mechanism scales with the size of the structure, and that for nanoscale structures it is less important than intrinsic phonon–phonon scattering. © 2002 American Institute of Physics.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
62.20.D- Elasticity
68.60.Bs Mechanical and acoustical properties
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Sulphur passivation of the InGaAsSb/GaSb photodiodes

BinHe Wu, GuanQun Xia, ZhiHuai Li, and Jian Zhou

Appl. Phys. Lett. 80, 1303 (2002); http://dx.doi.org/10.1063/1.1448383 (3 pages) | Cited 12 times

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Sulphur passivation effects on InGaAsSb/GaSb mesa-type photodiodes were investigated. Measurement results showed zero-bias resistance increased up to 40 times and reverse currents decreased greatly, as a result of sulphur passivation. Current–voltage characteristics showed no sign of degradation of InGaAsSb surface. Auger electron spectroscopy and x-ray photoelectron spectroscopy results demonstrated that the passivation layer is not in the form of S compounds but S element, S8 or Sn. © 2002 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.05.Ea III-V semiconductors
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.65.Rv Passivation
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