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18 Feb 2002

Volume 80, Issue 7, pp. 1111-1310

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Fast analog electro-optic effect in an achiral smectic C liquid crystal in a transverse electrode configuration

Chang-Jae Yu, Jin-Yun Kim, and Sin-Doo Lee

Appl. Phys. Lett. 80, 1111 (2002); http://dx.doi.org/10.1063/1.1450056 (3 pages) | Cited 4 times

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We demonstrated a fast analog electro-optic effect in an achiral smectic C (ASC) liquid crystal in a transverse electrode configuration. In this configuration, wide viewing characteristics are also achieved. The analog gray scales in the ASC mode are obtained in a dielectrically driving scheme as those in the nematic mode. The rising and falling times, 3.2 and 13.8 ms, are suitable for video-rate display applications. © 2002 American Institute of Physics.
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78.20.Jq Electro-optical effects
42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Two-photon absorption properties of commercial fused silica and germanosilicate glass at 264 nm

Adrian Dragomir, John G. McInerney, David N. Nikogosyan, and Peter G. Kazansky

Appl. Phys. Lett. 80, 1114 (2002); http://dx.doi.org/10.1063/1.1448387 (3 pages) | Cited 15 times

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Using high-intensity femtosecond pulses at λ = 264 nm, we have measured the two-photon absorption (TPA) coefficient in three fused silica samples Suprasil, Herasil, Infrasil (Heraeus) and in 3.5 mol % Ge-doped fused silica. While in fused silica samples the TPA coefficient value is about 2×10−11 cm/W, in germanosilicate glass it equals (42±3)×10−11 cm/W. © 2002 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.47.-p Spectroscopy of solid state dynamics

Solvent-assisted dye-diffusion thermal transfer for electronic imaging applications

Chung-Chih Wu, Sun-Wen Lin, Chieh-Wei Chen, and Jui-Hung Hsu

Appl. Phys. Lett. 80, 1117 (2002); http://dx.doi.org/10.1063/1.1447001 (3 pages) | Cited 2 times

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Molecularly doped polymers processed by dye-diffusion thermal transfer (D2T2) have wide applications in electronic imaging. For the sake of stability, it is usually desired that the host polymers have high glass-transition temperatures (Tg), which however implies high processing temperatures. In this letter, we show that in an atmosphere of organic solvent vapor, effective dye-diffusion thermal transfer may be carried out at temperatures much below the Tg of a host polymer. The atmosphere of solvent vapor ensures incorporation of solvent molecules into the polymer throughout the process and causes the plasticization effect. As a consequence, the effective Tg of the system is lowered and the diffusion of dyes in the host polymer is enhanced. Through such a process, polymers of higher Tg and wider ranges of dye molecules may be used in D2T2 without losing the processing compatibility. Furthermore, carrying out D2T2 at lower temperatures is beneficial to the resolutions of transferred features due to the suppression of vaporization of dyes. © 2002 American Institute of Physics.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
42.70.Jk Polymers and organics
66.30.J- Diffusion of impurities
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
64.70.F- Liquid-vapor transitions

Zero permittivity materials: Band gaps at the visible

N. Garcia, E. V. Ponizovskaya, and John Q. Xiao

Appl. Phys. Lett. 80, 1120 (2002); http://dx.doi.org/10.1063/1.1449529 (3 pages) | Cited 34 times

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We theoretically discuss the possibility of having materials with zero effective permittivity that would create band gaps in a wide range of frequencies up to the visible. The physical realization of these materials is also discussed in terms of embedding metallic nanoparticles and nanowires in a dielectric medium. In the limit of long wavelengths, these composites will behave like a homogeneous medium with zero permittivity that will completely reflect electromagnetic waves. We present transmittivity calculations by using finite-difference time domain for periodic structures that proves the concept and shows the validity of the long wavelength approximation. The striking result is that the cutoff frequency ωc is determined by the lattice parameter of the composite. By properly choosing the lattice constant of the composite and permittivity of metal and dielectric constituents, we can have full band gaps at any frequency range but especially in the visible. © 2002 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
77.22.Ch Permittivity (dielectric function)

Enhancing the surface passivation of TiO2 coated silicon wafers

B. S. Richards, J. E. Cotter, and C. B. Honsberg

Appl. Phys. Lett. 80, 1123 (2002); http://dx.doi.org/10.1063/1.1445810 (3 pages) | Cited 24 times

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In this letter, we demonstrate good surface passivation of lightly diffused n-type solar cell emitters using titanium dioxide (TiO2) thin films treated with a furnace oxidation process. Transient-photoconductance decay, x-ray photoelectron spectroscopy, and scanning electron microscopy measurements indicate that the silicon dioxide layer formed at the TiO2:Si interface provides excellent surface passivation. Emitter dark saturation current densities of 4.7×10−14 A/cm2 are achieved by this method, demonstrating that TiO2 films are compatible with high-efficiency solar cell structures. © 2002 American Institute of Physics.
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81.65.Rv Passivation
84.60.Jt Photoelectric conversion
73.50.Pz Photoconduction and photovoltaic effects
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.61.Le Other inorganic semiconductors

High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation

G. Walter, T. Chung, and N. Holonyak

Appl. Phys. Lett. 80, 1126 (2002); http://dx.doi.org/10.1063/1.1451989 (3 pages) | Cited 20 times

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Data are presented showing that a single-layer InAs quantum dot (QD) laser in the AlGaAs–GaAs–InGaAs–InAs heterostructure system is improved in gain and continuous wave (cw) room temperature operation by coupling, via tunneling, auxiliary strained-layer InGaAs quantum wells (QWs) to the single InAs QD layer to assist carrier collection and thermalization. A QW-assisted single-layer InAs QD laser, a QD+QW laser, is demonstrated that operates cw (300 K), and at diode length 150 μm in pulsed operation exhibits gain as high as ∼ 100 cm−1. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.67.Hc Quantum dots

Above-room-temperature optically pumped 4.12 μm midinfrared vertical-cavity surface-emitting lasers

F. Zhao, H. Wu, Lalith Jayasinghe, and Z. Shi

Appl. Phys. Lett. 80, 1129 (2002); http://dx.doi.org/10.1063/1.1449540 (3 pages) | Cited 16 times

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Optically pumped lead salt vertical-cavity surface-emitting lasers (VCSELs) with a nine period PbSe/PbSrSe quantum well active region operating above room temperature in pulsed mode are reported. The gain peak and cavity mode of the VCSEL structure are in resonance at 300 K. A power output of 40 mW is obtained at room temperature and it does not show saturation. The room-temperature threshold pump density is 200 kW/cm2. The lasing wavelength of λ = 4.12 μm remains nearly constant over a temperature range of 280–310 K. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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