Thin films of Nd3+-substituted bismuth titanate, (Bi4.00−y,Ndy)Ti3.00O12 (BNT), Nd3+/V5+-cosubstituted bismuth titanate, (Bi4.00−y,Ndy)(Ti3.00−xVx)O12 (BNTV), and La3+-substituted bismuth titanate, (Bi3.25,La0.75)Ti3.00O12 (BLT) were fabricated on the (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. These films possessed random-oriented polycrystalline structure. The BNT film had larger remnant polarization (Pr) than the BLT film; Pr and coercive field (Ec) of the BNT film with y = 0.50 were 32 μC/cm2 and 126 kV/cm, respectively. Furthermore, V5+ substitution improved the Pr value of the BNT film up to 37 μC/cm2 (BNTV film; y = 0.50, x = 0.02), while the BNTV film had an Ec value of approximately 119 kV/cm which was similar to that of the BNT film. Ferroelectric properties of the Pb-free polycrystalline BNT and BNTV films are comparable with those of conventional Pb-based ferroelectric films like a lead zirconate titanate. © 2002 American Institute of Physics.