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16 Sep 2002

Volume 81, Issue 12, pp. 2145-2305

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Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy

Hwa-Mok Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Yong-Hoon Cho, and K. S. Chung

Appl. Phys. Lett. 81, 2193 (2002); http://dx.doi.org/10.1063/1.1507617 (3 pages) | Cited 62 times

Online Publication Date: 9 September 2002

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Single-crystalline GaN nanorods are formed on a sapphire substrate by hydride vapor phase epitaxy (HVPE). Their structural and optical properties are investigated by x-ray diffraction, scanning and transmission electron microscopy, and cathodoluminescence (CL) techniques. The high density of straight and well-aligned nanorods with a diameter of 80–120 nm formed uniformly over the entire 2 in. sapphire substrate. The x-ray diffraction patterns and transmission electron microscopic images indicate that the formed GaN nanorods are a pure single crystal and preferentially oriented in the c-axis direction. We observed a higher CL peak position of individual GaN nanorods than that of bulk GaN as well as a blueshift of CL peak position with decreasing the diameter of GaN nanorods, which are attributed to quantum confinement effect in one-dimensional GaN nanorods. We demonstrate that the well-aligned, single-crystalline GaN nanorods with high density, high crystal quality, and good spatial uniformity are formed by the HVPE method. © 2002 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Lp Transmission electron microscopy (TEM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
78.60.Hk Cathodoluminescence, ionoluminescence

Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures

I. A. Buyanova, I. G. Ivanov, B. Monemar, W. M. Chen, A. A. Toropov, Ya. V. Terent’ev, S. V. Sorokin, A. V. Lebedev, S. V. Ivanov, and P. S. Kop’ev

Appl. Phys. Lett. 81, 2196 (2002); http://dx.doi.org/10.1063/1.1508162 (3 pages) | Cited 20 times

Online Publication Date: 9 September 2002

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Magneto-optical spectroscopy in combination with tunable laser excitation is employed to study exciton spin alignment and injection in ZnMnSe/ZnCdSe quantum structures. This approach enables us to selectively create preferred spin orientation and to separately monitor subsequent spin injection from individual spin states, thus shedding light on a possible source of spin loss. It is shown that the limited spin polarization in a nonmagnetic quantum well due to spin injection from a ZnMnSe-based diluted magnetic semiconductor (DMS) is not caused by a limited degree of spin alignment in the DMS, which is in fact complete, but rather occurs during subsequent processes. © 2002 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Pp Magnetic semiconductors
78.67.De Quantum wells
73.21.Fg Quantum wells
78.55.Et II-VI semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.Lk Collective effects (Bose effects, phase space filling, and excitonic phase transitions)
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