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30 Sep 2002

Volume 81, Issue 14, pp. 2493-2662

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Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions

Yutaka Oyama, Takeo Ohno, Kenji Tezuka, Ken Suto, and Jun-ichi Nishizawa

Appl. Phys. Lett. 81, 2563 (2002); http://dx.doi.org/10.1063/1.1510162 (3 pages) | Cited 9 times

Online Publication Date: 23 September 2002

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Low-temperature (290 °C) area-selective regrowth by the intermittent injection of precursors in an ultrahigh vacuum was applied for the fabrication of ultrashallow sidewall GaAs tunnel junctions with the junction area in the order of 10−8 cm2. The tunnel junctions on the normal mesa orientation have shown the record peak current density up to 31 000 A/cm2 and negative differential conductance of −1.4×10−5 S at 100 μm long strip structure. The peak current density of tunnel junctions has shown strong sidewall orientation dependences with the order of {111}A>{110}>{111}B. © 2002 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Theory of laser gain in InGaN quantum dots

W. W. Chow and H. C. Schneider

Appl. Phys. Lett. 81, 2566 (2002); http://dx.doi.org/10.1063/1.1509476 (3 pages) | Cited 11 times

Online Publication Date: 23 September 2002

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A theory for gain is developed for wide-bandgap nitride-based quantum-dot laser structures. A semiclassical laser theory is used to describe the optical susceptibility in the presence of strong many-body Coulomb interaction and quantum-confined Stark effect. Application of this theory shows distinctly different gain behavior depending on quantum dot dimensions, because of the interplay of these effects. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Ah General laser theory

Direct measurement of electrical potentials in GaInP2 solar cells

Chun-Sheng Jiang, H. R. Moutinho, J. F. Geisz, D. J. Friedman, and M. M. Al-Jassim

Appl. Phys. Lett. 81, 2569 (2002); http://dx.doi.org/10.1063/1.1509114 (3 pages) | Cited 8 times

Online Publication Date: 23 September 2002

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We report on the application of electrostatic force microscopy to photovoltaic devices. Profiles of electrical potentials on cross sections of a GaInP2 solar cell device were measured quantitatively and spatially resolved. Two potentials are assigned, respectively, to the p–n junction of GaInP2 and the band offset between the GaInP2 base layer and the GaAs substrate. In addition to the flattening of the p–n junction by the light irradiations, two changes of the potential that positively contribute to the open-circuit voltage of the device are found at locations close to the window and the back surface field layers. © 2002 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.40.Cg Contact resistance, contact potential
68.37.Ps Atomic force microscopy (AFM)
73.20.-r Electron states at surfaces and interfaces

Nanoscale charge transport in an electroluminescent polymer investigated by conducting atomic force microscopy

Heh-Nan Lin, Hui-Lien Lin, Shen-Shen Wang, Liang-Sheng Yu, Gung-Yeong Perng, Show-An Chen, and Sy-Hann Chen

Appl. Phys. Lett. 81, 2572 (2002); http://dx.doi.org/10.1063/1.1509464 (3 pages) | Cited 31 times

Online Publication Date: 23 September 2002

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We report conducting atomic force microscopy study of nanoscale hole transport in an electroluminescent polymer. Imaging of current variation with a spatial resolution of around 20 nm is achieved. Local current–voltage measurements are performed and the mobilities obtained from space-charge-limited current analysis are two orders of magnitude higher than macroscopic results. A Poole–Frenkel plot shows a clear transition at a field of around 1.5×106 V/cm, which is consistent with reported values of polaron dissociation field. © 2002 American Institute of Physics.
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78.60.Fi Electroluminescence
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
71.38.-k Polarons and electron-phonon interactions
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Le Polymers; organic compounds (including organic semiconductors)
73.61.Ph Polymers; organic compounds
73.50.Fq High-field and nonlinear effects
72.20.Ht High-field and nonlinear effects
72.20.Ee Mobility edges; hopping transport
73.50.Dn Low-field transport and mobility; piezoresistance

Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions

T. Gebel, L. Rebohle, W. Skorupa, A. N. Nazarov, I. N. Osiyuk, and V. S. Lysenko

Appl. Phys. Lett. 81, 2575 (2002); http://dx.doi.org/10.1063/1.1510970 (3 pages) | Cited 12 times

Online Publication Date: 23 September 2002

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The trapping effects of negative and positive charge in Ge-enriched SiO2 layers during high-field electron injection from the Si substrate of Al–SiO2–Si structures are studied. The capture cross section and the concentration of negatively and positively charged traps are estimated and the location of the positively charged traps is determined. It is shown that increasing rapid thermal annealing time from 6 to 150 s at 1000 °C leads to an enhanced diffusion of Ge towards the SiO2–Si interface and an increase in negatively and positively charged trap concentration. The mechanisms of the trap generation are discussed. © 2002 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Fq High-field and nonlinear effects
85.60.Jb Light-emitting devices

Analysis of low-frequency noise in boron-doped polycrystalline silicon–germanium resistors

Kun-Ming Chen, Guo-Wei Huang, D. Y. Chiu, Hsiang-Jen Huang, and Chun-Yen Chang

Appl. Phys. Lett. 81, 2578 (2002); http://dx.doi.org/10.1063/1.1511815 (3 pages) | Cited 1 time

Online Publication Date: 23 September 2002

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Low-frequency noise in boron-doped polycrystalline silicon–germanium (poly-Si1−xGex) resistors at various temperatures is studied. The poly-Si1−xGex films with 0% ∼ 36% Ge content were grown using ultrahigh vacuum chemical molecular epitaxy system. We find that the low-frequency noise in poly-Si1−xGex decreases with increasing Ge content, due to the lower potential barrier height of grain boundaries in higher Ge content samples. Moreover, the low-frequency noise decreases with increasing temperature. These results are well explained by the carrier mobility fluctuation model. © 2002 American Institute of Physics.
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73.50.Td Noise processes and phenomena
73.61.Le Other inorganic semiconductors
81.05.Hd Other semiconductors
72.70.+m Noise processes and phenomena
72.80.Jc Other crystalline inorganic semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance

Enhancing the electroluminescent properties of organic light-emitting devices using a thin NaCl layer

S. J. Kang, D. S. Park, S. Y. Kim, C. N. Whang, K. Jeong, and S. Im

Appl. Phys. Lett. 81, 2581 (2002); http://dx.doi.org/10.1063/1.1511817 (3 pages) | Cited 47 times

Online Publication Date: 23 September 2002

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We report on the fabrication of organic light-emitting devices (OLEDs) using a thin NaCl interlayer as an electron-injection medium. The results show that the device containing the NaCl layer has a higher brightness and electroluminescent efficiency than the device without this layer. We also fabricated similar-structured comparable devices, which were prepared with a LiF layer as a different electron-injection medium. The maximum electroluminescent efficiency of the NaCl (1 nm)/Al cathode device was 2.85 cd/A, which is higher than the 2.25 cd/A of the LiF (1 nm)/Al cathode device. The ultrathin NaCl layer modified the carrier injection properties. In conclusion, the NaCl layer between a cathode and an emitting layer of OLEDs can be used as the carrier injection layer to improve the EL properties. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
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