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30 Sep 2002

Volume 81, Issue 14, pp. 2493-2662

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Growth and spin-resolved photoemission spectroscopy of the epitaxial α-Al2O3/Fe(110) system

Yu. S. Dedkov, M. Fonin, U. Rüdiger, and G. Güntherodt

Appl. Phys. Lett. 81, 2584 (2002); http://dx.doi.org/10.1063/1.1507836 (3 pages) | Cited 5 times

Online Publication Date: 23 September 2002

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Electronic and structural properties of epitaxial ultrathin aluminum oxide layers grown on epitaxial Fe(110) films were investigated at room temperature by means of spin-, angle- and energy-resolved photoemission spectroscopy. A spin polarization of −(15±5)% near the Fermi energy EF is found for 1 (ML) of α-Al2O3 on epitaxial Fe(110). This value results from the attenuation of −80% of Fe(110) by the oxide layer thickness and the spin-independent part of the scattering cross section. © 2002 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures

Electrical properties, texture, and microstructure of vicinal YBa2Cu3O7−δ thin films

J. D. Pedarnig, R. Rössler, M. P. Delamare, W. Lang, D. Bäuerle, A. Köhler, and H. W. Zandbergen

Appl. Phys. Lett. 81, 2587 (2002); http://dx.doi.org/10.1063/1.1508418 (3 pages) | Cited 17 times

Online Publication Date: 23 September 2002

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Vicinal YBa2Cu3O7−δ (YBCO) thin films of thickness h = 20–480 nm are grown by pulsed-laser deposition on 10° miscut (001) SrTiO3 substrates. The anisotropic resistivities, c-axis texture, and critical temperature drastically depend on the thickness of vicinal films. High-resolution electron microscopy reveals a defect microstructure with strong bending of the YBCO lattice near the SrTiO3 interface and improved film microstructure at larger distances to the substrate. The required layer thickness for microstructure relaxation and increase of electrical conductivity are significantly larger than the critical thickness of c-axis oriented YBCO films. © 2002 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
74.72.-h Cuprate superconductors
74.25.F- Transport properties

Magnetic properties of (Al,Ga,Mn)As

K. Takamura, F. Matsukura, D. Chiba, and H. Ohno

Appl. Phys. Lett. 81, 2590 (2002); http://dx.doi.org/10.1063/1.1511540 (3 pages) | Cited 35 times

Online Publication Date: 23 September 2002

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Epitaxial (Al,Ga,Mn)As films were prepared by low-temperature molecular-beam epitaxy and their magnetic properties were investigated. The Mn composition was fixed at approximately 0.05 while Al composition was varied up to 0.30. The results of magnetization and transport measurements for high Al composition samples show an out-of-plane magnetic easy axis and insulating behavior. This is quite different from those of (Ga,Mn)As films grown under the same growth conditions. The postgrowth annealing modified both the anisotropy and conductivity, indicating the presence of correlation between them. Preparation and characterization of the (Al,Ga,Mn)As-based heterostructures are also presented. © 2002 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Pp Magnetic semiconductors
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