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7 Oct 2002

Volume 81, Issue 15, pp. 2677-2902

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Highly efficient continuous-wave 946-nm Nd:YAG laser emission under direct 885-nm pumping

V. Lupei, N. Pavel, and T. Taira

Appl. Phys. Lett. 81, 2677 (2002); http://dx.doi.org/10.1063/1.1511811 (3 pages) | Cited 33 times

Online Publication Date: 30 September 2002

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The 885-nm Ti:Sapphire pumping into the emitting level 4F3/2 of Nd:YAG produces a highly efficient (0.68 slope efficiency in absorbed power) 946-nm laser emission; a strong reduction of heat generation could be also obtained. © 2002 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems

Low-threshold photonic crystal laser

Marko Lončar, Tomoyuki Yoshie, Axel Scherer, Pawan Gogna, and Yueming Qiu

Appl. Phys. Lett. 81, 2680 (2002); http://dx.doi.org/10.1063/1.1511538 (3 pages) | Cited 113 times

Online Publication Date: 30 September 2002

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We have fabricated photonic crystal nanocavity lasers, based on a high-quality factor design that incorporates fractional edge dislocations. Lasers with InGaAsP quantum well active material emitting at 1550 nm were optically pumped with 10 ns pulses, and lased at threshold pumping powers below 220 μW, the lowest reported for quantum-well based photonic crystal lasers, to our knowledge. Polarization characteristics and lithographic tuning properties were found to be in excellent agreement with theoretical predictions. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.70.Qs Photonic bandgap materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Quantum-cascade-laser structures as photodetectors

Daniel Hofstetter, Mattias Beck, and Jérôme Faist

Appl. Phys. Lett. 81, 2683 (2002); http://dx.doi.org/10.1063/1.1512954 (3 pages) | Cited 24 times

Online Publication Date: 30 September 2002

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We evaluated two different quantum-cascade-laser structures as photodetectors. The first device was a 5.3 μm two-phonon-resonance structure, and the second one a 9.3 μm bound-to-continuum transition laser. The 5.3 μm structure had a peak responsivity of 120 μA/W at 2200 cm−1 and functioned up to 325 K. On the other hand, the 9.3 μm device also worked up to 297 K but had a lower responsivity of 50 μA/W at 1330 cm−1. Since the absorption peak of these devices can be shifted by applying an external bias, we envision interesting applications in free-space optical telecommunications. © 2002 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Nonvolatile two-color holography in Mn-doped near-stoichiometric lithium niobate

Youwen Liu, Kenji Kitamura, Shunji Takekawa, Ganesan Ravi, Masaru Nakamura, Hideki Hatano, and Takashi Yamaji

Appl. Phys. Lett. 81, 2686 (2002); http://dx.doi.org/10.1063/1.1512951 (3 pages) | Cited 19 times

Online Publication Date: 30 September 2002

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Nonvolatile holograms are recorded in near-stoichiometric LiNbO3 doped with 8 ppm of Mn by use of a two-color holographic recording method. An IR laser with wavelength of 778 nm is used for writing and a UV laser with wavelength of 350 nm is used for gating. Dependences of two-color sensitivity and M/ on gating and writing intensities are presented. Significant improvements of sensitivity, M/, and dark decay are obtained compared with reduced near-stoichiometric LiNbO3. The obtained high two-color sensitivity of 0.21 cm/J with a gating intensity of 1.5 W/cm2 is attributed to large light-induced absorption of small polarons. © 2002 American Institute of Physics.
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42.40.Ht Hologram recording and readout methods
42.70.Ln Holographic recording materials; optical storage media
71.38.Ht Self-trapped or small polarons

Self-assembly of three-dimensional photonic crystals on structured silicon wafers

P. Ferrand, M. Egen, B. Griesebock, J. Ahopelto, M. Müller, R. Zentel, S. G. Romanov, and C. M. Sotomayor Torres

Appl. Phys. Lett. 81, 2689 (2002); http://dx.doi.org/10.1063/1.1513212 (3 pages) | Cited 13 times

Online Publication Date: 30 September 2002

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The growth of an opal-like polymer photonic crystal (PhC) on deeply etched silicon wafers is reported. It is shown that 10 μm deep trenches, as narrow as 10 μm can be uniformly filled by self-assembly of microspheres, in a close-packed face-centered-cubic lattice. These observations are confirmed by optical reflectance measurements in the visible range, in agreement with theoretical calculations of the photonic band gap. A slight fluctuation of the lattice parameter is noticed in the case of the narrowest channels. The possibility to detach the PhC from the substrate is also demonstrated. The potential of this approach for building complex PhC-based complex architectures is discussed. © 2002 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
42.86.+b Optical workshop techniques
42.50.-p Quantum optics
78.66.Qn Polymers; organic compounds
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning

Density clamping and longitudinal spatial hole burning in a gain-clamped semiconductor optical amplifier

M.-S. Nomura, F. Salleras, M. A. Dupertuis, L. Kappei, D. Marti, B. Deveaud, J.-Y. Emery, A. Crottini, B. Dagens, T. Shimura, and K. Kuroda

Appl. Phys. Lett. 81, 2692 (2002); http://dx.doi.org/10.1063/1.1512308 (3 pages) | Cited 3 times

Online Publication Date: 30 September 2002

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We have directly measured, under operating conditions, the distributions of carrier densities and temperatures in a gain-clamped semiconductor optical amplifier designed for operation at 1.55 μm. As expected, longitudinal spatial hole burning is much smaller than in conventional semiconductor optical amplifiers and the effects of gain clamping are clearly evidenced. The amplifier nevertheless shows a sizeable temperature increase for both the lattice and the carriers at high currents, which are attributed to contributions of Auger recombination, intervalence band absorption, and Joule and recombination heating. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Cascaded Raman self-frequency shifted soliton generation in an Er/Yb-doped fiber amplifier

Do-Hyun Kim, Jin U. Kang, and Jacob B. Khurgin

Appl. Phys. Lett. 81, 2695 (2002); http://dx.doi.org/10.1063/1.1512823 (3 pages) | Cited 3 times

Online Publication Date: 30 September 2002

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The polarization and power dependencies of cascaded Raman self-frequency shifted solitons generation in a polarization maintaining high power Er/Yb fiber amplifier have been experimentally investigated. The experimental results show the number and amount of cascaded Raman solitons generations and frequency shifts, respectively, dependent on the input polarization state and the gain of the all-PM fiber amplifier. The numerical modeling was also conducted based on the experimental parameters and the experimental results are shown to be in good agreement with the theory. © 2002 American Institute of Physics.
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42.55.Wd Fiber lasers
42.81.Dp Propagation, scattering, and losses; solitons
42.65.Tg Optical solitons; nonlinear guided waves
42.55.Ye Raman lasers
42.81.Gs Birefringence, polarization

Tunable single-photon source using Korteweg–de Vries solitons

Ken-ichi Matsuda, Noriyuki Hatakenaka, Hideaki Takayanagi, and Tetsuro Sakuma

Appl. Phys. Lett. 81, 2698 (2002); http://dx.doi.org/10.1063/1.1512942 (3 pages) | Cited 2 times

Online Publication Date: 30 September 2002

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We describe the quantum transport of electrons by solitary waves and use it as the basis for a scheme for generating a single photon with highly nonclassical nature. A concave soliton acting as an attractive potential can capture an electron in its only eigenstate and the captured electron can be transported by soliton propagation. A single photon is generated by a transition between eigenstates in the interacting soliton potential when a soliton with a captured electron interacts with an empty soliton with a lower eigenstate. © 2002 American Institute of Physics.
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03.67.-a Quantum information
42.50.-p Quantum optics
05.45.Yv Solitons

Enhanced third-order nonlinear optical properties of C60–silane compounds

B. L. Yu, H. P. Xia, C. S. Zhu, and F. X. Gan

Appl. Phys. Lett. 81, 2701 (2002); http://dx.doi.org/10.1063/1.1512959 (3 pages) | Cited 7 times

Online Publication Date: 30 September 2002

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The nonlinear optical properties of C60[NH2–(CH2)3–Si(OC2H5)3]3 sol and gel were investigated by femtosecond optical Kerr gate technique at 820 nm. The nonresonant third-order optical susceptibilities were measured to be 1.4×10−13 and 1.6×10−13 esu for the C60[NH2–(CH2)3–Si(OC2H5)3]3 sol and gel, respectively, which are two orders larger than that of C60 molecule. © 2002 American Institute of Physics.
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42.70.Jk Polymers and organics
42.65.An Optical susceptibility, hyperpolarizability
42.65.-k Nonlinear optics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
82.70.Gg Gels and sols
78.66.Tr Fullerenes and related materials

Microstructure of squarylium dye J aggregate films examined on the basis of optical behavior at low temperature

Satoshi Tatsuura, Minquan Tian, Makoto Furuki, Yasuhiro Sato, Izumi Iwasa, Lyong Sun Pu, Hitoshi Kawashima, and Hiroshi Ishikawa

Appl. Phys. Lett. 81, 2704 (2002); http://dx.doi.org/10.1063/1.1512960 (3 pages) | Cited 3 times

Online Publication Date: 30 September 2002

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The microstructure of a spin-coated film of squarylium dye J aggregates is examined on the basis of the measurement of the optical properties and the third-order nonlinear optical susceptibility χ(3) at low temperature. The absorption maximum of J aggregates shifted to lower energies as the film temperature decreased, while χ(3) was independent of the temperature. The latter finding indicates that the coherent length of J aggregates is confined by a structural boundary rather than by phonons; consequently, the observed peak energy shift can be due to temperature-dependent conformational change of the aggregates. The small aggregation size may contribute to the ultrahigh-speed optical response of squarylium dye J aggregates. © 2002 American Institute of Physics.
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42.70.Jk Polymers and organics
68.55.-a Thin film structure and morphology
42.65.An Optical susceptibility, hyperpolarizability
78.66.Qn Polymers; organic compounds
78.40.Me Organic compounds and polymers
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Zirconia and zirconia-organically modified silicate distributed feedback waveguide lasers tunable in the visible

Dennis Lo, Lei Shi, Jun Wang, Guo-Xuan Zhang, and Xiao-lei Zhu

Appl. Phys. Lett. 81, 2707 (2002); http://dx.doi.org/10.1063/1.1512949 (3 pages) | Cited 14 times

Online Publication Date: 30 September 2002

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Zirconia and zirconia-organically modified silicate waveguides of refractive index from 1.56 to 1.64 and thickness from 0.6 to 1.4 μm were prepared by the sol-gel method. Narrow linewidth (<0.5 nm) lasing was observed in dye-doped zirconia and zirconia-organically modified silicates waveguides. Tuning of the output wavelength was achieved by varying the period of the gain modulation generated by a nanosecond Nd:yttritium–aluminum–garnet laser at 532 nm. Tuning ranges were 586–618 nm and 629–657 nm for rhodamine 6G and rhodamine B, respectively. The threshold pump energy was about 50 μJ for rhodamine 6G-doped zirconia film on glass substrates. © 2002 American Institute of Physics.
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42.55.Mv Dye lasers
42.60.Fc Modulation, tuning, and mode locking
81.05.Mh Cermets, ceramic and refractory composites

Second-harmonic generation tuning curves with narrow, high-intensity beams for quasiphase-matched potassium titanyl phosphate

Hongki Kim, Ladislav Jankovic, George Stegeman, Mordechai Katz, Silvia Carrasco, and Lluis Torner

Appl. Phys. Lett. 81, 2710 (2002); http://dx.doi.org/10.1063/1.1512941 (3 pages) | Cited 1 time

Online Publication Date: 30 September 2002

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The tuning curves with temperature and incidence angle for second-harmonic generation were asymmetrically distorted and broadened with increasing intensity for narrow input fundamental beams in periodically poled KTiOPO4. Multiple phenomena including mutual self-focusing of the fundamental and harmonic, cascading, quadratic soliton generation, and artificially induced walk-off (for light incidence away from the poling axis) contribute, in good agreement with theory. © 2002 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Tg Optical solitons; nonlinear guided waves

Negative refraction of modulated electromagnetic waves

D. R. Smith, D. Schurig, and J. B. Pendry

Appl. Phys. Lett. 81, 2713 (2002); http://dx.doi.org/10.1063/1.1512828 (3 pages) | Cited 75 times

Online Publication Date: 30 September 2002

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We show that a modulated Gaussian beam undergoes negative refraction at the interface between a positive and negative refractive index material. While the refraction of the beam is clearly negative, the modulation interference fronts are not normal to the group velocity, and thus exhibit a sideways motion relative to the beam—an effect due to the inherent frequency dispersion associated with the negative index medium. In particular, the interference fronts appear to bend in a manner suggesting positive refraction, such that for a plane wave, the true direction of the energy flow associated with the refracted beam is not obvious. © 2002 American Institute of Physics.
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42.25.Gy Edge and boundary effects; reflection and refraction
42.25.Hz Interference
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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Atmospheric-pressure diffuse coplanar surface discharge for surface treatments

Marcel Šimor, Jozef Ráhel’, Pavel Vojtek, Mirko Černák, and Antonín Brablec

Appl. Phys. Lett. 81, 2716 (2002); http://dx.doi.org/10.1063/1.1513185 (3 pages) | Cited 45 times

Online Publication Date: 30 September 2002

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We report results from a plasma source; a diffuse coplanar surface discharge (DCSD), which is capable of generating macroscopically uniform thin layers of diffuse plasmas in air and other reactive gases at atmospheric pressure. DCSD is a type of dielectric barrier discharge generated on the surface of a dielectric barrier with embedded electrodes, which appears to be advantageous to surface treatment and deposition processes. Preliminary results on hydrophilization of polypropylene nonwoven fabric are also presented. © 2002 American Institute of Physics.
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52.50.Dg Plasma sources
52.80.Wq Discharge in liquids and solids
52.77.Bn Etching and cleaning
81.65.-b Surface treatments
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Effect of annealing on the In and N distribution in InGaAsN quantum wells

M. Albrecht, V. Grillo, T. Remmele, H. P. Strunk, A. Yu. Egorov, Gh. Dumitras, H. Riechert, A. Kaschner, R. Heitz, and A. Hoffmann

Appl. Phys. Lett. 81, 2719 (2002); http://dx.doi.org/10.1063/1.1509122 (3 pages) | Cited 55 times

Online Publication Date: 30 September 2002

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We analyze the influence of annealing on compositional fluctuations in InGaAsN quantum wells by means of composition-sensitive high-resolution transmission electron microscopy and photoluminescence. In as-grown samples, we find In-concentration fluctuations of ±5% on a length scale of 20 nm in a two-dimensional grown quantum well. No indications for N concentration fluctuations are found within the limits of resolution. Annealing homogenizes the In distribution within the well and causes diffusion of N out of the quantum well. According to our compositional analysis, the blueshift in the photoluminescence can in part be attributed to reduction in N concentration inside the well. The more homogeneous In distribution leads to a reduction in linewidth and Stokes shift. © 2002 American Institute of Physics.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
68.65.Fg Quantum wells
61.72.Cc Kinetics of defect formation and annealing
78.66.Fd III-V semiconductors
68.37.Lp Transmission electron microscopy (TEM)

The origin of stress reduction by low-temperature AlN interlayers

J. Bläsing, A. Reiher, A. Dadgar, A. Diez, and A. Krost

Appl. Phys. Lett. 81, 2722 (2002); http://dx.doi.org/10.1063/1.1512331 (3 pages) | Cited 50 times

Online Publication Date: 30 September 2002

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Thin low-temperature AlN interlayers can be applied to reduce stress to grow thick crack-free AlGaN layers on GaN buffer layers on sapphire and thick crack-free GaN layers on Si. The mechanism leading to stress reduction is investigated by high resolution x-ray diffractometry measurements on metalorganic chemical vapor phase epitaxy grown samples on Si(111) with different interlayer deposition temperatures. A decrease of tensile stress with decreasing interlayer growth temperature is observed. From reciprocal space maps we conclude that interlayers grown at high temperatures are pseudomorphic, while grown at lower temperatures they are relaxed. Therefore, AlGaN or GaN layers grown on a low temperature AlN interlayer grow under compressive interlayer-induced strain. The stress in the GaN layer depends on the growth temperature that likely controls the amount of AlN interlayer relaxation. © 2002 American Institute of Physics.
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68.55.A- Nucleation and growth
81.15.Kk Vapor phase epitaxy; growth from vapor phase
FREE

Giant microcavity enhancement of second-harmonic generation in all-silicon photonic crystals

T. V. Dolgova, A. I. Maidykovski, M. G. Martemyanov, A. A. Fedyanin, O. A. Aktsipetrov, G. Marowsky, V. A. Yakovlev, and G. Mattei

Appl. Phys. Lett. 81, 2725 (2002); http://dx.doi.org/10.1063/1.1510968 (3 pages) | Cited 35 times

Online Publication Date: 30 September 2002

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Second-harmonic generation (SHG) spectra of single and coupled porous silicon-based photonic crystal microcavities are studied in both frequency and wave vector domains. For the fundamental field resonant to the microcavity mode the second-harmonic intensity is enhanced by 102 times in comparison with that outside the photonic band gap. SHG spectroscopy in identical microcavities coupled through the intermediate Bragg reflector reveals two SHG peaks if the fundamental field is in resonance with the splitted mode of coupled microcavities. The spatial confinement of the resonant fundamental radiation is directly probed at the microcavity cleavage by scanning near-field optical microscopy. © 2002 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Qs Photonic bandgap materials

Z-contrast imaging of dislocation cores at the GaAs/Si interface

S. Lopatin, S. J. Pennycook, J. Narayan, and G. Duscher

Appl. Phys. Lett. 81, 2728 (2002); http://dx.doi.org/10.1063/1.1511808 (3 pages) | Cited 17 times

Online Publication Date: 30 September 2002

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The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs without simulation. Three different types of dislocations were identified. As expected, a dangling bond was found in the atomic structure of the 60° dislocation. One of the observed 90° dislocations had the reconstructed atomic core structure (with no dangling bonds). The core structure of the other 90° dislocation exhibited a dangling bond. © 2002 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Lp Transmission electron microscopy (TEM)
68.35.Ct Interface structure and roughness
81.05.Ea III-V semiconductors
81.05.Cy Elemental semiconductors
61.72.Lk Linear defects: dislocations, disclinations
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Optical diffraction gratings produced by laser interference structuring of amorphous germanium–nitrogen alloys

M. Mulato, A. R. Zanatta, D. Toet, and I. E. Chambouleyron

Appl. Phys. Lett. 81, 2731 (2002); http://dx.doi.org/10.1063/1.1512307 (3 pages) | Cited 1 time

Online Publication Date: 30 September 2002

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We use the interference of two pulsed laser beams (wavelength = 355 nm) to produce an optical diffraction grating in amorphous germanium–nitrogen alloy (a-GeN). At the constructive maxima of the interference pattern, the absorption of light leads to crystallization. The crystallized region results of pure microcrystalline germanium (μc-Ge). An indication that Ge–N bonds have broken and nitrogen outdiffused of the film is obtained from infrared spectroscopy and confirmed by Raman spectra. A pattern of alternating a-GeN and μc-Ge lines with a period of about 4 μm acts as an optical diffraction grating due to the difference in optical properties between the two materials, and the three dimensional surface profile, caused by N2 effusion, that is formed on the sample. © 2002 American Institute of Physics.
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42.79.Dj Gratings
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.62.-b Laser applications
78.66.Jg Amorphous semiconductors; glasses
61.82.Fk Semiconductors
61.43.Dq Amorphous semiconductors, metals, and alloys
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Effects of carbon codoping on lattice locations of erbium in silicon

M. B. Huang and X. T. Ren

Appl. Phys. Lett. 81, 2734 (2002); http://dx.doi.org/10.1063/1.1510960 (3 pages) | Cited 5 times

Online Publication Date: 30 September 2002

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The effects of carbon codoping on the lattice location of Er atoms in silicon have been investigated using ion beam channeling. A float-zone (FZ) Si (100) wafer was first amorphized to a depth of ∼ 0.3 μm by Si ion implantation at 77 K. The amorphous Si layer was then implanted with carbon ions, and recrystallized via solid phase epitaxial growth. Finally, Er ions were implanted into C-doped and C-free Si samples at 300 °C. Angular scans along three major crystalline directions, that is, 〈100〉, 〈110〉, and 〈111〉, were performed for Er-implanted Si with and without C codoping. In FZ-Si, in which the carbon concentration is very low (<1016 cm−3), a large fraction ( ∼ 50%) of implanted Er atoms are found to occupy the near-tetrahedral (T) interstitial site, while few Er atoms are on the hexagonal (H) interstitial site. It is evident that the incorporation of C into Si tends to decrease the fraction of T-site Er atoms and relocate them to the H site. We have also determined the effective number ( ∼ 1.5) of carbon atoms required for depopulating an Er atom from the T site to H site. Implications on the configuration of Er luminescence centers are discussed. © 2002 American Institute of Physics.
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61.72.S- Impurities in crystals
61.72.uf Ge and Si
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
78.55.Ap Elemental semiconductors

Interferometric correlation spectroscopy in single quantum dots

C. Kammerer, G. Cassabois, C. Voisin, M. Perrin, C. Delalande, Ph. Roussignol, and J. M. Gérard

Appl. Phys. Lett. 81, 2737 (2002); http://dx.doi.org/10.1063/1.1510158 (3 pages) | Cited 42 times

Online Publication Date: 30 September 2002

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We report high-resolution spectroscopy by interferometric correlation measurements on the photoluminescence signal of a single quantum dot. We demonstrate that the insertion of a Michelson interferometer in the detection path gives a compact and flexible setup for linewidth measurements. We have used this technique to study self-assembled InAs/GaAs quantum dots. We observe linewidth variations from one quantum dot to another, and we bring evidence of environment effects on the broadening processes. © 2002 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Thickness determination of very thin SiO2 films on Si by electron-induced x-ray emission spectroscopy

C. Hombourger, P. Jonnard, E. O. Filatova, and V. Lukyanov

Appl. Phys. Lett. 81, 2740 (2002); http://dx.doi.org/10.1063/1.1511281 (3 pages) | Cited 2 times

Online Publication Date: 30 September 2002

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Electron-induced x-ray emission spectroscopy (EXES) associate with a semi-empirical electron scattering model is used to determine thicknesses between 2 and 21 nm of SiO2 films on Si. The small charging effect occurring upon electron irradiation is taken into account by introducing a retarding potential in the model. The results are in very close agreement with those obtained by spectroscopic ellipsometry and x-ray reflectometry. It is demonstrated that the EXES with its model is a well-suited method for the quantitative analysis of thin insulating films with an uncertainty lower than 5%. © 2002 American Institute of Physics.
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06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
78.70.En X-ray emission spectra and fluorescence
61.80.Fe Electron and positron radiation effects
61.82.Ms Insulators

On the origin of the blueshift from type-II quantum dots emission using microphotoluminescence

M. K. K. Nakaema, F. Iikawa, M. J. S. P. Brasil, E. Ribeiro, G. Medeiros-Ribeiro, W. Carvalho, M. Z. Maialle, and M. H. Degani

Appl. Phys. Lett. 81, 2743 (2002); http://dx.doi.org/10.1063/1.1511812 (3 pages) | Cited 14 times

Online Publication Date: 30 September 2002

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We have studied type-II InP/GaAs self-assembled quantum dots by microphotoluminescence spectroscopy. Sharp spectral features were observed on top of a broad emission band. They are associated to statistical fluctuations from the ensemble of dots. Photoluminescence measurements as a function of the excitation intensity revealed markedly distinct behaviors: the broadband contour shows a large blueshift while the energy positions of the sharp features remain basically constant. We show that the large blueshift of the broad emission band in type-II quantum dots is not due to the barrier interface potential variation, but to the state filling of higher-energy states. © 2002 American Institute of Physics.
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78.67.Hc Quantum dots
81.07.Ta Quantum dots
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
73.21.La Quantum dots

Surface roughening of tensilely strained Si1−x−yGexCy films grown by ultrahigh vacuum chemical vapor deposition

Cyril Calmes, D. Bouchier, D. Débarre, and C. Clerc

Appl. Phys. Lett. 81, 2746 (2002); http://dx.doi.org/10.1063/1.1505114 (3 pages) | Cited 3 times

Online Publication Date: 30 September 2002

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Using in situ reflection high-energy electron diffraction, we have studied the surface roughening of SiGeC that occurs in ultrahigh vacuum chemical vapor deposition under certain growth conditions. For a given SiH3CH3 fraction in the gas phase, high growth rates and low temperatures are found to be favorable to obtain smooth surfaces. Roughening is accompanied by a dramatic decrease of the substitutional C content. According to these observations, we propose a model of surface roughening based on the formation of carboneous complexes on the film surface, limited by the growth rate and the diffusion length of C adatoms. From that, a critical ratio between the growth rate and the C diffusion coefficient was assumed. Its temperature dependence was determined. The activation energy of C adatoms diffusion was found to be close to the well known value for hydrogen desorption. © 2002 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation

Sr3Al10SiO20:Eu2+ as a blue luminescent material for plasma displays

Shunichi Kubota and Masahiko Shimada

Appl. Phys. Lett. 81, 2749 (2002); http://dx.doi.org/10.1063/1.1512306 (3 pages) | Cited 23 times

Online Publication Date: 30 September 2002

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A new luminescent material, Sr3Al10SiO20:Eu2+, has been synthesized. The material exhibits an emission peak at 466 nm for the (Sr0.993Eu0.007)3Al10SiO20 and a CIE chromaticity of (x = 0.145, y = 0.124), with relative intensity of 60% of commercial phosphor BaMgAl10O17:Eu2+ under vaccum ultraviolet excitation. © 2002 American Institute of Physics.
Show PACS
78.55.Hx Other solid inorganic materials
85.60.Pg Display systems
52.75.-d Plasma devices
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