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7 Oct 2002

Volume 81, Issue 15, pp. 2677-2902

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Bifunctional photovoltaic and electroluminescent devices using a starburst amine as an electron donor and hole-transporting material

Z. R. Hong, C. S. Lee, S. T. Lee, W. L. Li, and Y. Shirota

Appl. Phys. Lett. 81, 2878 (2002); http://dx.doi.org/10.1063/1.1509092 (3 pages) | Cited 24 times

Online Publication Date: 30 September 2002

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Photovoltaic (PV) devices, using 4,4′,4″-tris(2-methylphenylphenylamino)triphenylamine (m-MTDATA) as an electron donor and tris-(8-hydroxyquinoline) aluminum (Alq) as an electron acceptor, were fabricated. The relationship between photocurrent generation, exciplex formation, and device structure was explored. PV performance was significantly enhanced by inserting a thin mixed layer (5 nm) of m-MTDATA and Alq between the two organic layers of the original m-MTDATA/Alq bilayer device. Both the bilayer and trilayer devices showed PV and electroluminescent (EL) properties, suggesting their potential use as multifunction devices. It was also shown that strong EL emission from exciplex might be used as an indicator of efficient exciton dissociation during the reverse PV process. © 2002 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
73.50.Pz Photoconduction and photovoltaic effects
78.66.Qn Polymers; organic compounds
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.60.Fi Electroluminescence
73.61.Ph Polymers; organic compounds
71.35.-y Excitons and related phenomena

Extraction of spatio-temporal distribution of power dissipation in semiconductor devices using nanosecond interferometric mapping technique

D. Pogany, S. Bychikhin, M. Litzenberger, E. Gornik, G. Groos, and M. Stecher

Appl. Phys. Lett. 81, 2881 (2002); http://dx.doi.org/10.1063/1.1510962 (3 pages) | Cited 11 times

Online Publication Date: 30 September 2002

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A method for the extraction of power dissipation sources inside semiconductor devices on a nanosecond-time scale is proposed using a backside transient interferometric mapping technique. The two-dimensional power dissipation density is extracted from the time and space derivative of the measured optical phase shift. The method is applied to the analysis of moving current filaments in an electrostatic discharge protection device operating in the avalanche regime. It is found that the filament dynamics is governed by the negative temperature dependence of the impact ionization coefficient. The total power calculated from the optical measurements is in excellent agreement with the electrical input power. © 2002 American Institute of Physics.
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72.70.+m Noise processes and phenomena
85.30.-z Semiconductor devices
73.50.Fq High-field and nonlinear effects

High-efficiency blue-light-emitting diodes with narrow linewidth based on blends of poly[2-(2′-ethylhexyloxy)-1,4-phenylene] and poly(dialkylfluorene-co-dibenzothiophene)

Yu-Hua Niu, Wei Yang, and Yong Cao

Appl. Phys. Lett. 81, 2884 (2002); http://dx.doi.org/10.1063/1.1510581 (3 pages) | Cited 7 times

Online Publication Date: 30 September 2002

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High-efficiency blue light-emitting diodes were realized based on the blends of poly(dialkylfluorene-co-dibenzothiophene) in poly[2-(2′-ethylhexyloxy)-1,4-phenylene] host. The external quantum efficiency was increased by about four times, relative to devices with the guest polymer alone. Much more balanced carrier injection was assigned as the origin of the performance enhancement. Dramatic narrowing on linewidth, with the full width at half maximum reduced from more than 40 to 14.3 nm, produced more pure blue emission. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence

Contact effects in polymer transistors

R. A. Street and A. Salleo

Appl. Phys. Lett. 81, 2887 (2002); http://dx.doi.org/10.1063/1.1512950 (3 pages) | Cited 119 times

Online Publication Date: 30 September 2002

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Polymer thin film transistors based on the polyfluorene F8T2 exhibit a nonohmic contact resistance, particularly when in the coplanar device geometry. We show how to obtain the current–voltage relation for the contact from the transistor output characteristics measured with different channel lengths. The diode-type relation is attributed to the contact injection properties of the metal Schottky barrier. No significant increase in mobility with gate or drain field is observed. © 2002 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
73.61.Ph Polymers; organic compounds
85.30.Tv Field effect devices
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