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7 Oct 2002

Volume 81, Issue 15, pp. 2677-2902

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Energy band structure of Ru/(Ba,Sr)TiO3/Si capacitor deposited by inductively-coupled plasma-assisted radio-frequency-magnetron plasma sputtering

Takamaro Kikkawa, Naonori Fujiwara, Hiroshi Yamada, Seiichi Miyazaki, Fumitaka Nishiyama, and Masataka Hirose

Appl. Phys. Lett. 81, 2821 (2002); http://dx.doi.org/10.1063/1.1509467 (3 pages) | Cited 8 times

Online Publication Date: 30 September 2002

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Properties of barium strontium titanate (Ba,Sr)TiO3 (BST) thin films, deposited by inductively-coupled-plasma (ICP)-assisted rf magnetron-plasma sputtering, were investigated. It is found that the ICP-assisted rf-magnetron plasma improved the stoichiometry of the BST film. The energy band structure of the Ru/BST/Si system was investigated. It is found that the bandgaps of BST and interface SiO2 were 4.30 and 8.95 eV, respectively, and the work function of Ru was 4.97 eV. The valence band offsets for BST/Si and interface SiO2/Si are 3.55 and 4.48 eV, respectively. As a result, the conduction band barrier height of Ru against BST was found to be 1.40 eV. © 2002 American Institute of Physics.
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84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Atomic-layer deposition of ZrO2 with a Si nitride barrier layer

Anri Nakajima, Toshirou Kidera, Hiroyuki Ishii, and Shin Yokoyama

Appl. Phys. Lett. 81, 2824 (2002); http://dx.doi.org/10.1063/1.1510584 (3 pages) | Cited 20 times

Online Publication Date: 30 September 2002

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ZrO2 thin films for gate dielectrics have been formed at low temperatures (200 °C) by an atomic-layer deposition (ALD) technique using Zr(t-OC4H9)4 and H2O source gases. An ultrathin (physical thickness Tphy of ∼0.5 nm) Si nitride layer was deposited on a Si substrate by ALD before the deposition of ZrO2. Transmission electron microscopy showed that the Si nitride barrier layer successfully suppressed the formation of a SiO2 interfacial layer. Because of the extremely uniform thickness control capability in the ultrathin region and the low thermal budget of the ALD process, the ALD process for the ZrO2/Si nitride stack structure is a promising candidate for fabricating the ultrathin gate dielectrics for sub-0.1-μm complementary metal–oxide–semiconductor transistors. © 2002 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Sz Deposition technology
68.37.Lp Transmission electron microscopy (TEM)

In situ characterization of the grain and grain-boundary electrical responses of zirconia ceramics under uniaxial compressive stresses

Jean-Claude M’Peko, Deusdedit L. Spavieri, and Milton Ferreira de Souza

Appl. Phys. Lett. 81, 2827 (2002); http://dx.doi.org/10.1063/1.1512328 (3 pages) | Cited 11 times

Online Publication Date: 30 September 2002

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The electrical properties of ion-conducting tetragonal zirconia ceramics subjected to mechanical stresses were studied using impedance spectroscopy. The material’s overall resistance (grain and grain boundary) was found to increase when stress was applied perpendicularly to the measuring electric field (σ⊥E), while only comparatively discreet variations, involving a decreasing trend of resistance, occurred when the electric field and mechanical stress were parallel (σ∥E). The increment in electrical resistance for σ⊥E was found to be consistent with an increase of the conduction process energy barrier. The mechanical effect reported here is of elastic nature, covering a wide range of applied stresses. The electrical characteristics from cracking and fracturing at higher stresses are also presented. © 2002 American Institute of Physics.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials

Conductivity-induced polarization buildup in poly(vinylidene fluoride)

H. von Seggern and S. N. Fedosov

Appl. Phys. Lett. 81, 2830 (2002); http://dx.doi.org/10.1063/1.1512944 (3 pages) | Cited 15 times

Online Publication Date: 30 September 2002

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During initial high-field poling of biaxially stretched poly(vinylidene fluoride) (PVDF) films, ferroelectric polarization continues to develop through times of five to six orders of magnitude longer than theoretically expected poling times. Considering a delayed poling process induced by a finite conductivity in the two phases of PVDF explains the effect. The fast poling component originates from the alignment of dipoles in the ferroelectric phase and is solely controlled by the electric field dependent switching time, while the second slow component is controlled by conductivity related charge accumulation at the interfacial boundaries whose time constant is governed by the Maxwell relaxation time. © 2002 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
77.22.Gm Dielectric loss and relaxation
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