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Applied Physics Letters / Volume 81 / Issue 16 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 81, 2965 (2002); http://dx.doi.org/10.1063/1.1514822 (3 pages)

GaAs(311) templates for molecular beam epitaxy growth: surface morphologies and reconstruction

Z. M. Wang, V. R. Yazdanpanah, J. L. Shultz, and G. J. Salamo

Physics Department, University of Arkansas, Fayetteville, Arizona 72701

(Received 8 July 2002; accepted 22 August 2002)

Morphologies of GaAs(311) surfaces grown by molecular beam epitaxy were investigated by in situ reflection high-energy electron diffraction and scanning tunnelling microscope. In addition to the (8×1) reconstruction, two surface phases, GaAs(311)A-(4×1) and GaAs(311)B-(2×1) were observed. Both of these surfaces are characterized by wider, atomically smooth terraces with much lower structural anisotropy, when compared to the (8×1) reconstructed GaAs(311) surfaces. The observed surfaces have potential as templates for the growth of organized quantum dots, wires, and wells. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, surface structure, surface reconstruction, molecular beam epitaxial growth, III-V semiconductors, semiconductor growth, reflection high energy electron diffraction, scanning tunnelling microscopy

PACS

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 81.05.Ea

    III-V semiconductors

  • 68.55.-a

    Thin film structure and morphology

  • 68.37.Ef

    Scanning tunneling microscopy (including chemistry induced with STM)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1514822

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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