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14 Oct 2002

Volume 81, Issue 16, pp. 2917-3103

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Comment on “Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells” [Appl. Phys. Lett. 79, 2594 (2001)]

R. W. Martin, K. P. O’Donnell, and P. R. Edwards

Appl. Phys. Lett. 81, 3100 (2002); http://dx.doi.org/10.1063/1.1515886 (2 pages) | Cited 1 time

Online Publication Date: 7 October 2002

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© 2002 American Institute of Physics.
Show PACS
68.65.Fg Quantum wells
78.67.De Quantum wells
64.75.-g Phase equilibria
81.07.St Quantum wells
78.55.Cr III-V semiconductors
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Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]

H. K. Cho, J. Y. Lee, N. Sharma, C. J. Humphreys, G. M. Yang, C. S. Kim, J. H. Song, and P. W. Yu

Appl. Phys. Lett. 81, 3102 (2002); http://dx.doi.org/10.1063/1.1515887 (2 pages) | Cited 2 times

Online Publication Date: 7 October 2002

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
68.65.Cd Superlattices
78.55.Cr III-V semiconductors
73.21.Cd Superlattices
68.35.Ct Interface structure and roughness
64.75.-g Phase equilibria
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
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