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14 Oct 2002

Volume 81, Issue 16, pp. 2917-3103

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Ge–Sn semiconductors for band-gap and lattice engineering

M. Bauer, J. Taraci, J. Tolle, A. V. G. Chizmeshya, S. Zollner, David J. Smith, J. Menendez, Changwu Hu, and J. Kouvetakis

Appl. Phys. Lett. 81, 2992 (2002); http://dx.doi.org/10.1063/1.1515133 (3 pages) | Cited 54 times

Online Publication Date: 7 October 2002

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We describe a class of Si-based semiconductors in the Ge1−xSnx system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge1−xSnx alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior. © 2002 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.60.Dv Thermal stability; thermal effects
71.20.Nr Semiconductor compounds
78.66.Li Other semiconductors
73.20.At Surface states, band structure, electron density of states
78.30.Hv Other nonmetallic inorganics
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Integrity of hafnium silicate/silicon dioxide ultrathin films on Si

J. Morais, L. Miotti, G. V. Soares, S. R. Teixeira, R. Pezzi, K. P. Bastos, I. J. R. Baumvol, A. L. P. Rotondaro, J. J. Chambers, M. R. Visokay, and L. Colombo

Appl. Phys. Lett. 81, 2995 (2002); http://dx.doi.org/10.1063/1.1515112 (3 pages) | Cited 23 times

Online Publication Date: 7 October 2002

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Rapid thermal annealing at 1000 °C of (HfO2)1−x(SiO2)x pseudobinary alloy films deposited on Si were performed in N2 or O2 atmospheres. The effects on the atomic transport, structure, and composition were investigated using isotopic substitution of oxygen, high-resolution transmission electron microscopy, nuclear reaction analyses, narrow nuclear reaction resonance profiling, and grazing angle x-ray reflection. © 2002 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology
68.37.Lp Transmission electron microscopy (TEM)

Sub-picosecond electron relaxation of near-infrared intersubband transitions in n-doped (CdS/ZnSe)/BeTe quantum wells

R. Akimoto, K. Akita, F. Sasaki, and T. Hasama

Appl. Phys. Lett. 81, 2998 (2002); http://dx.doi.org/10.1063/1.1515371 (3 pages) | Cited 28 times

Online Publication Date: 7 October 2002

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We report on intersubband (ISB) absorption and ultrafast ISB energy relaxation of carriers in n-type doped (CdS/ZnSe)/BeTe quantum wells (QWs), grown by molecular-beam epitaxy. The highly n-type doped QW samples were obtained by introducing a few monolayer CdS into a ZnSe/BeTe QW, and ISB absorption with a peak wavelength as short as 1.62 μm, covering 1.55 μm within its absorption bandwidth, was achieved. The ISB carrier relaxation was investigated by means of femtosecond ( ∼ 150 fs) one-color pump and probe technique at the ISB absorption peak. The ISB carrier relaxation time of 270 fs was observed in the sample with the absorption peak at 1.82 μm. The slow decay component with a time constant of a few ps, which has been observed in ZnSe/BeTe QWs, was not observed in the (CdS/ZnSe)/BeTe QWs, indicating that the Γ(ZnSe)–X(BeTe) electron transfer is suppressed, as expected from the band alignment. © 2002 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.66.Hf II-VI semiconductors
78.67.De Quantum wells
78.30.Fs III-V and II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.50.Dn Low-field transport and mobility; piezoresistance

Transient optical studies of charge recombination dynamics in a polymer/fullerene composite at room temperature

Ivan Montanari, Ana F. Nogueira, Jenny Nelson, James R. Durrant, Christoph Winder, Maria Antonietta Loi, Niyazi Serdar Sariciftci, and Christoph Brabec

Appl. Phys. Lett. 81, 3001 (2002); http://dx.doi.org/10.1063/1.1512943 (3 pages) | Cited 91 times

Online Publication Date: 7 October 2002

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The recombination kinetics of photogenerated charge carriers in a composite of poly[2-methoxy-5- (3′,7′-dimethyloctyloxy)-1-4-phenylene vinylene], (MDMO–PPV) and the functionalised fullerene 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 are investigated at room temperature by transient absorption spectroscopy. The decay dynamics of positively charged MDMO–PPV polarons were found to be either monophasic or biphasic, depending upon the laser excitation density employed. The slower, power law, decay phase (100 ns–10 ms) is attributed to recombination dynamics of localized polarons, while the fast decay component (<20 ns) is attributed to recombination of relatively mobile polarons observed when the density of localized states is exceeded by the density of photogenerated polarons ( ∼ 1017 cm−3). The implications of these observations are discussed in relation to polymer/C60 photovoltaic cells. © 2002 American Institute of Physics.
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73.61.Ph Polymers; organic compounds
73.61.Wp Fullerenes and related materials
73.50.Pz Photoconduction and photovoltaic effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.66.Qn Polymers; organic compounds
78.66.Tr Fullerenes and related materials
73.50.Dn Low-field transport and mobility; piezoresistance
71.38.-k Polarons and electron-phonon interactions
78.47.-p Spectroscopy of solid state dynamics

Carrier profiling of Al-doped 4H-SiC by scanning spreading resistance microscopy

J. Osterman, A. Hallén, and S. Anand

Appl. Phys. Lett. 81, 3004 (2002); http://dx.doi.org/10.1063/1.1514829 (3 pages) | Cited 9 times

Online Publication Date: 7 October 2002

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Epitaxially-grown Al-doped 4H-SiC has been studied by scanning spreading resistance microscopy. The measured current shows good quantitative agreement with the chemical Al concentration in the range 2×1016 to 2×1020 atoms cm−3. Simulations of the sample temperature distribution using finite element calculations predict a maximum temperature exceeding 750 K within 100 nm of the contact region at 7.5 V dc bias for an Al doping of 1020 cm−3. The heating causes a significant increase in the ionization of the dopants relative to that at room temperature. Due to the strong voltage dependence, the effect can be avoided by operating below 5 V dc bias where the temperature rise is shown to be negligible for all dopant concentrations. © 2002 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Jc Other crystalline inorganic semiconductors

Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates

S. D. Lin, C. P. Lee, W. H. Hsieh, and Y. W. Suen

Appl. Phys. Lett. 81, 3007 (2002); http://dx.doi.org/10.1063/1.1515878 (3 pages) | Cited 3 times

Online Publication Date: 7 October 2002

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The growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2–2.0 nm and a period about 23 nm. Using an In0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed. © 2002 American Institute of Physics.
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81.07.Vb Quantum wires
68.65.La Quantum wires (patterned in quantum wells)
81.16.Dn Self-assembly
73.63.Nm Quantum wires
73.50.Dn Low-field transport and mobility; piezoresistance
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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