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14 Oct 2002

Volume 81, Issue 16, pp. 2917-3103

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Hall effect and hole densities in Ga1−xMnxAs

K. W. Edmonds, K. Y. Wang, R. P. Campion, A. C. Neumann, C. T. Foxon, B. L. Gallagher, and P. C. Main

Appl. Phys. Lett. 81, 3010 (2002); http://dx.doi.org/10.1063/1.1512822 (3 pages) | Cited 87 times

Online Publication Date: 7 October 2002

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By studying the Hall effect in a series of low resistivity Ga1−xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature TC are obtained over the range 0.015 ⩽ x ⩽ 0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0×1027 m−3 when TC = 125 K. These data allow the first meaningful comparison of mean field predicted Curie temperatures with experiment over a wide range of x. The theory is in qualitative agreement with experiment, but overestimates TC at large x and underestimates TC at low x. © 2002 American Institute of Physics.
Show PACS
75.50.Pp Magnetic semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
72.80.Ey III-V and II-VI semiconductors
75.50.Dd Nonmetallic ferromagnetic materials

Ferromagnetism and interlayer exchange coupling in short-period (Ga,Mn)As/GaAs superlattices

R. Mathieu, P. Svedlindh, J. Sadowski, K. Światek, M. Karlsteen, J. Kanski, and L. Ilver

Appl. Phys. Lett. 81, 3013 (2002); http://dx.doi.org/10.1063/1.1515368 (3 pages) | Cited 22 times

Online Publication Date: 7 October 2002

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Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of nonmagnetic GaAs spacer. The short-period Ga0.93Mn0.07As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition close to 60 K, for thicknesses of (Ga,Mn)As down to 23 Å. For Ga0.96Mn0.04As/GaAs superlattices of similar dimensions, the Curie temperature associated with the ferromagnetic transition is found to oscillate with the thickness of nonmagnetic spacer. The observed oscillations are related to an interlayer exchange interaction mediated by the polarized holes of the (Ga,Mn)As layers. © 2002 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Et Exchange and superexchange interactions
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
73.21.Cd Superlattices

Angular rotation of magnetic hysteresis of ion-irradiated ferromagnetic thin films

G. S. Chang, T. A. Callcott, G. P. Zhang, G. T. Woods, S. H. Kim, S. W. Shin, K. Jeong, C. N. Whang, and A. Moewes

Appl. Phys. Lett. 81, 3016 (2002); http://dx.doi.org/10.1063/1.1515370 (3 pages) | Cited 4 times

Online Publication Date: 7 October 2002

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The magnetization direction of a cobalt-platinum film has been manipulated by magnetic-field-assisted ion-beam mixing. A uniaxial easy magnetization axis is induced along the oscillation direction of the incident beam of 80 keV Ar+ ions. The easy axis was then rotated by 60°, when the same ion irradiation process was carried out in the presence of an external magnetic field. Magnetic force microscopy measurements show that line shaped domain structures are created with their long axis along the induced magnetization directions. It is proposed that the creation of adjacent regions with orthogonal magnetization can play a crucial role in stabilizing the magnetostatic dipolar interaction between adjacent bits of magnetic data storage devices. © 2002 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Cc Other ferromagnetic metals and alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.80.Jh Ion radiation effects
61.82.Bg Metals and alloys
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