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21 Oct 2002

Volume 81, Issue 17, pp. 3119-3293

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Dielectric properties of sol–gel-derived MgO:Ba0.5Sr0.5TiO3 thin-film composites

M. Jain, S. B. Majumder, R. S. Katiyar, D. C. Agrawal, and A. S. Bhalla

Appl. Phys. Lett. 81, 3212 (2002); http://dx.doi.org/10.1063/1.1515879 (3 pages) | Cited 28 times

Online Publication Date: 15 October 2002

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Alternate layer deposition of heterostructured magnesium oxide (MgO):barium strontium titanate (BST) thin films is demonstrated to be an approach to synthesize dielectric films with a higher figure of merit for microwave dielectric applications. The dielectric constant and the dielectric tunability are modified by MgO insertion. The dramatic reduction in the dielectric loss tangent effectively increased the figure of merit of the heterostructured thin films as compared to the pure BST films. The significant reduction in the dielectric loss tangent values has been attributed to the minute solid solubility of MgO in the BST lattice and the induced microstructural modifications induced by the MgO layers in thin films. © 2002 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Lf Composite materials
77.22.Gm Dielectric loss and relaxation
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Scanning force microscopy investigation of the Pb(Zr0.25Ti0.75)O3/Pt interface

X. M. Lu, F. Schlaphof, S. Grafström, C. Loppacher, L. M. Eng, G. Suchaneck, and G. Gerlach

Appl. Phys. Lett. 81, 3215 (2002); http://dx.doi.org/10.1063/1.1512961 (3 pages) | Cited 29 times

Online Publication Date: 15 October 2002

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We report on a novel approach for the investigation of the Pb(ZrxTi1−x)O3/Pt interface applying scanning force microscopy techniques. Ferroelectric samples (PZTfilm/Pt/SiO2/Si) were polished at a shallow angle (∼6.1°) thereby enlarging the film cross section from a 430 nm film thickness to a width of more than 4 μm. Piezoresponse force microscopy and Kelvin probe force microscopy were applied in order to deduce the dielectric polarization P and local potential distribution over the full cross section. We clearly observe a transition layer with a thickness of ∼240 nm which manifests itself both in a gradual decrease of the piezoresponse signal as a function of film thickness and in a corresponding variation of the surface potential. Furthermore, after polarization reversal due to a dc voltage applied to the tip, a different retention behavior was observed within the transition layer. The results are tentatively attributed to negatively charged defects accumulated at the PZT/Pt interface. © 2002 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.65.-j Piezoelectricity and electromechanical effects
68.37.Ps Atomic force microscopy (AFM)
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
68.35.Ct Interface structure and roughness

Oxygen tracer studies of ferroelectric fatigue in Pb(Zr,Ti)O3 thin films

Lawrence F. Schloss, Paul C. McIntyre, Bryan C. Hendrix, Steven M. Bilodeau, Jeffrey F. Roeder, and Stephen R. Gilbert

Appl. Phys. Lett. 81, 3218 (2002); http://dx.doi.org/10.1063/1.1516628 (3 pages) | Cited 12 times

Online Publication Date: 15 October 2002

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Long-range oxygen motion has been observed in Pt/Pb(Zr,Ti)O3/Ir thin-film structures after electrical fatigue cycling at room temperature. Through an exchange anneal, isotopic 18O was incorporated as a tracer into bare Pb(Zr,Ti)O3 (PZT) films, allowing secondary ion mass spectrometry measurements of the tracer profile evolution as a function of the number of polarization reversals. Observation of 18O tracer redistribution during voltage cycling, which is presumably mediated by oxygen vacancy motion, was found to be strongly dependent upon the thermal history of the film. However, there was no strong correlation between the extent of 18O tracer redistribution and the extent of polarization suppression induced by voltage cycling. Our results suggest that oxygen vacancy motion plays, at most, a secondary role in ferroelectric fatigue of PZT thin films. © 2002 American Institute of Physics.
Show PACS
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
66.30.H- Self-diffusion and ionic conduction in nonmetals
61.72.J- Point defects and defect clusters
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
77.22.Ej Polarization and depolarization

Ferroelectric properties of (117)- and (001)-oriented Bi3.25La0.75Ti3O12 polycrystalline thin films

Yu-Ming Sun, Yi-Chan Chen, Jon-Yiew Gan, and Jenn-Chang Hwang

Appl. Phys. Lett. 81, 3221 (2002); http://dx.doi.org/10.1063/1.1516234 (3 pages) | Cited 42 times

Online Publication Date: 15 October 2002

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Highly (117)- and (001)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated on Pt/TiO2/SiO2/Si(100) substrates by chemical solution deposition under the appropriate baking and crystallization conditions. The (117)-oriented BLT films exhibited higher remanent polarization (2Pr = 24 μC/cm2), than did (001)-oriented BLT films, which exhibited only a slight amount of polarization (2Pr = 6.6 μC/cm2). The results of fatigue and retention tests revealed that neither film was fatigued up to 1×1010 switching cycles, and the retained charge was unchanged for 1×104 s. © 2002 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization

Dependence of ferroelectric performance of sol–gel-derived Pb(Zr,Ti)O3 thin films on bottom-Pt-electrode thickness

Ji-Eun Lim, Dong-Yeon Park, Jae Kyeong Jeong, Gregor Darlinski, Hyeong Joon Kim, Cheol Seong Hwang, Seung-Hyun Kim, Chang-Young Koo, Hyun-Jung Woo, Dong-Su Lee, and Jowoong Ha

Appl. Phys. Lett. 81, 3224 (2002); http://dx.doi.org/10.1063/1.1516830 (3 pages) | Cited 10 times

Online Publication Date: 15 October 2002

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Pb(Zr,Ti)O3 (PZT) thin films were deposited on Pt/Ti and Pt/IrO2 electrode stacks with various Pt thicknesses (30–200 nm) by a sol–gel process. The sputter-deposited Pt films showed a (111)-preferred texture irrespective of the thickness. However, a high-resolution x-ray diffraction study of the Pt films showed that the films were composed of three kinds of grains with slightly different lattice parameters. The grains with a bulk-like lattice parameter grew with increasing Pt thickness, which was accompanied with an improvement in the crystalline quality. Accordingly, the crystallization and ferroelectric behavior of the 100-nm-thick PZT films improved with increasing Pt film thickness. However, the PZT films on the Pt/IrO2 electrode showed a deteriorated ferroelectric performance due to the outward diffusion of the Ir (O) onto the Pt surface, which increases the depolarizing field and amount of charge injection by the formation of a conducting phase. © 2002 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Platinum-assisted phase transition in bismuth-based layer-structured ferroelectric CaBi4Ti4O15 thin films

Kazumi Kato, Kazuyuki Suzuki, Desheng Fu, Kaori Nishizawa, and Takeshi Miki

Appl. Phys. Lett. 81, 3227 (2002); http://dx.doi.org/10.1063/1.1517179 (3 pages) | Cited 20 times

Online Publication Date: 15 October 2002

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The phase transition of nonferroelectric pyrochlore to ferroelectric perovskite in CaBi4Ti4O15 thin films depends on platinum bottom electrodes. Rather than the strain and crystallinity of the bottom electrode, matching of the atomic arrangement to the Ca–Bi–Ti–O thin films is predominant. CaBi4Ti4O15 thin films crystallized on (200)-oriented platinum at 650 °C showed c-axis orientation. In contrast, thin films crystallized on highly crystalline (111)-oriented platinum at the same temperature contained pyrochlore grains which were about several tens of nanometers in diameter and located in the interface region. They showed P–V hysteresis loops. The remanent polarization and coercive electric field depended on platinum top electrode size. © 2002 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
68.55.-a Thin film structure and morphology
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Role of grain boundaries on hydrogen-induced degradation in lead zirconate titanate thin films

Jang-Sik Lee and Seung-Ki Joo

Appl. Phys. Lett. 81, 3230 (2002); http://dx.doi.org/10.1063/1.1516233 (3 pages) | Cited 8 times

Online Publication Date: 15 October 2002

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It is well known that exposing lead zirconate titanate (PZT) thin films to hydrogen severely degrades the electrical properties. This phenomenon has been the subject of intensive study; however, there is no electrical evidence relating the hydrogen-induced degradation with the grain boundaries in the films. In this work, using large-grained PZT thin films (average grain size: 40 μm), we could measure the effects of grain boundary on the hydrogen-induced degradation in PZT thin films by locating the upper Pt electrode (8×8 μm2) sequentially from the center of the grain to the grain boundary in a controlled manner. It was found that the grain boundary was mainly responsible for the electrical degradation caused by exposure to the hydrogen. Little degradation with hydrogen exposure was observed when the Pt top electrode was located in the center of the grain. © 2002 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Mm Grain and twin boundaries
77.80.Dj Domain structure; hysteresis
77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ej Polarization and depolarization
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