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21 Oct 2002

Volume 81, Issue 17, pp. 3119-3293

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Erratum: “Characterization of GaAs/AlGaAs laser mesas regrown with semi-insulating GaInP by scanning capacitance microscopy” [Appl. Phys. Lett. 81, 960 (2002)]

O. Douhéret, S. Anand, C. Angulo Barrios, and S. Lourdudoss

Appl. Phys. Lett. 81, 3293 (2002); http://dx.doi.org/10.1063/1.1517182 (1 page)

Online Publication Date: 15 October 2002

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Abstract Unavailable

Show PACS

42.55.Px	Semiconductor lasers; laser diodes
81.05.Ea	III-V semiconductors
81.15.Kk	Vapor phase epitaxy; growth from vapor phase
68.37.-d	Microscopy of surfaces, interfaces, and thin films
99.10.Cd	Errata

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21 Oct 2002

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