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28 Oct 2002

Volume 81, Issue 18, pp. 3311-3500

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Operation of photonic crystal membrane lasers above room temperature

Po-Tsung Lee, J. R. Cao, Sang-Jun Choi, Zhi-Jian Wei, John D. O’Brien, and P. Daniel Dapkus

Appl. Phys. Lett. 81, 3311 (2002); http://dx.doi.org/10.1063/1.1517409 (3 pages) | Cited 24 times

Online Publication Date: 22 October 2002

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Operation of photonic crystal lasers for substrate temperatures as high as 50 °C is reported. The temperature dependence of the lasing wavelength and the threshold pump power is also investigated. The characteristic temperature To is 37.7 K. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.70.Qs Photonic bandgap materials
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.50.-p Quantum optics

Light-controlled photon tunneling

Igor I. Smolyaninov, Christopher C. Davis, and Anatoly V. Zayats

Appl. Phys. Lett. 81, 3314 (2002); http://dx.doi.org/10.1063/1.1518778 (3 pages) | Cited 11 times

Online Publication Date: 22 October 2002

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Recent measurements of photon tunneling through individual subwavelength pinholes in a gold film covered with a layer of polydiacetylene [Phys. Rev. Lett. 88, 187402 (2002)] has provided strong indication of “photon blockade” effects similar to Coulomb blockade phenomena observed in single-electron tunneling experiments. Here we report the observation of photon tunneling being blocked (gated) by light at a different wavelength. This suggests the possibility of building a class of “gated” photon tunneling devices for all-optical signal processing. © 2002 American Institute of Physics.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.50.-p Quantum optics
42.65.-k Nonlinear optics

Wideband sub-Poissonian light generation in light-emitting diodes incorporating a heavily-doped active region

K. Tanaka, A. Higashi, H. Yuji, R. Masuyama, Y. Kadoya, and M. Yamanishi

Appl. Phys. Lett. 81, 3317 (2002); http://dx.doi.org/10.1063/1.1517725 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2002

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We investigated the generation of sub-Poissonian light in light-emitting diodes (LEDs) in which the active region is heavily doped with Be. The squeezing of the intensity-fluctuation below the full-shot-noise level was observed in a wide frequency range, near-dc to 1.5 GHz. From the noise-suppression spectra, we evaluated the radiative recombination lifetime of electrons in the active region and confirmed that the lifetime is reduced with increasing doping density. The results demonstrate clearly the excellent noise properties as well as the capability of high-speed modulation of the LEDs. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.50.Td Noise processes and phenomena
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Micromachined Fabry–Perot interferometer for motion detection

Richard L. Waters and Monti E. Aklufi

Appl. Phys. Lett. 81, 3320 (2002); http://dx.doi.org/10.1063/1.1518557 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2002

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The monolithic integration of a Fabry–Perot interferometer and a (100) silicon photodiode is reported for use as a highly sensitive transduction method in the detection of minute displacements of a proof mass attached to a spring. The combination results in a compact device with active transistor-like amplification and minimal parasitic elements. The transducer is fabricated using standard surface micromachining techniques. The finesse of the optical cavity, incident optical power, and geometry of the mirror and support structure control the sensitivity of the transducer. A transduction of more than 2285 A/m, percent change in transmission with displacement of 3%/nm, small-signal voltage amplification of 460 V/V, output resistance of 100 MΩ and transconductance of 1 mA/V have been obtained thus far for a single device without amplification. © 2002 American Institute of Physics.
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06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
07.60.Ly Interferometers
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
06.60.Vz Workshop procedures (welding, machining, lubrication, bearings, etc.)
81.20.Wk Machining, milling
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.86.+b Optical workshop techniques
85.60.Dw Photodiodes; phototransistors; photoresistors

Terahertz-wave surface-emitted difference frequency generation in slant-stripe-type periodically poled LiNbO3 crystal

Yuzo Sasaki, Avetisyan Yuri, Kodo Kawase, and Hiromasa Ito

Appl. Phys. Lett. 81, 3323 (2002); http://dx.doi.org/10.1063/1.1518779 (3 pages) | Cited 46 times

Online Publication Date: 22 October 2002

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We demonstrate terahertz-wave (THz-wave) surface-emitted difference frequency generation with nanosecond pulse duration. A slant-stripe-type periodically poled lithium niobate (PPLN) crystal was used to realize the quasi-phase-matching in two mutually perpendicular directions of optical and THz-wave propagation. A THz-wave with a wavelength near 200 μm was generated by mixing the radiation of a dual-signal-wave optical parametric oscillator based on a periodically phase-reversed PPLN crystal. © 2002 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Mp Nonlinear optical crystals

Multiple-wavelength second-harmonic generation in aperiodic optical superlattices

H. Liu, S. N. Zhu, Y. Y. Zhu, N. B. Ming, X. C. Lin, W. J. Ling, A. Y. Yao, and Z. Y. Xu

Appl. Phys. Lett. 81, 3326 (2002); http://dx.doi.org/10.1063/1.1518565 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2002

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We present a kind of aperiodic structure for the generation of multiple-wavelength second harmonic in a quasi-phase-matching scheme. In order to confirm its efficiency, a LiTaO3 superlattice with such an aperiodic domain-inverted structure was designed and fabricated. The second-harmonic generation at four present wavelengths was experimentally demonstrated from the superlattice with high and nearly equal conversion efficiencies. The tested result is in good agreement with theoretical consideration. The method may be used for the design of optical superlattices to construct multiple-wavelength lasers and wavelength converters for all-optical network. © 2002 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Nk Insulators
42.79.Nv Optical frequency converters
42.70.-a Optical materials
42.79.Wc Optical coatings
68.65.Ac Multilayers

Nondoped-type white organic electroluminescent devices utilizing complementary color and exciton diffusion

Toshie Tsuji, Shigeki Naka, Hiroyuki Okada, and Hiroyoshi Onnagawa

Appl. Phys. Lett. 81, 3329 (2002); http://dx.doi.org/10.1063/1.1516629 (3 pages) | Cited 49 times

Online Publication Date: 22 October 2002

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We fabricated nondoped white organic electroluminescent devices using vacuum-deposited thin films of blue-emitting 4,4′-bis[N-1-napthyl-N-phenyl-amino]biphenyl (α-NPD) and orange-emitting 4-(dicyanomethylene)-2-metyl-6-(p-dimethyl aminostyryl)-4H-pyran (DCM), a hole-blocking layer of 2-(4-biphenyl)-5-(p-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD) and electron-transporting tris(8-quinolinolato) aluminum (III). Excitons formed at the α-NPD/tBu-PBD interface sequentially transfer their energy to α-NPD via the Förster mechanism. The exciton is captured by an ultrathin DCM layer located within the pure α-NPD layer. The position of the DCM determines the device spectrum, and enables a white emission to be achieved. The spectrum is not sensitive to the voltage applied, and the devices show maximum luminance of about 1000 cd/m2. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
71.35.-y Excitons and related phenomena

Domain switching characteristics and fabrication of periodically poled potassium niobate for second-harmonic generation

Joong Hyun Kim and Choon Sup Yoon

Appl. Phys. Lett. 81, 3332 (2002); http://dx.doi.org/10.1063/1.1517722 (3 pages) | Cited 9 times

Online Publication Date: 22 October 2002

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We report on the 180° domain switching characteristics and fabrication of periodically poled KNbO3 for second-harmonic generation. Using a modified triangular pulse, a periodically poled KNbO3 of very high quality was fabricated with dimensions of 3×4×0.925 (a×b×c) mm3 and a period of 32.5 μm to utilize the d31 component of the second-order nonlinear optical coefficient tensor. An efficient second-harmonic generation of a mode-locked Nd:YAG laser, operated at 1064 nm with a pulse width of 35 ps, was achieved with a maximum conversion efficiency of 34.8%. The effective nonlinear coefficient, measured in the limit of undepleted pump approximation, was 5.2 pm/V, which is 68% of the theoretical value. © 2002 American Institute of Physics.
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42.70.Mp Nonlinear optical crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

All-optical switching and logic gating with spatial solitons in liquid crystals

Marco Peccianti, Claudio Conti, Gaetano Assanto, Antonio De Luca, and Cesare Umeton

Appl. Phys. Lett. 81, 3335 (2002); http://dx.doi.org/10.1063/1.1519101 (3 pages) | Cited 83 times

Online Publication Date: 22 October 2002

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Using mW light beams to generate spatial solitons in nematic liquid crystals, all-optical switching/logic can be performed on a signal launched in the soliton-induced waveguides. Through the collisional behavior of solitons in a nonlocal medium, the signal can be steered in angle and output position. A power-dependent X junction, AND, and NOR gates are demonstrated. © 2002 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Tg Optical solitons; nonlinear guided waves
42.70.Df Liquid crystals
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
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Voronoi diagrams in barrier gas discharge

A. L. Zanin, A. W. Liehr, A. S. Moskalenko, and H.-G. Purwins

Appl. Phys. Lett. 81, 3338 (2002); http://dx.doi.org/10.1063/1.1518775 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2002

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Voronoi diagrams are essential topics of modern physics, chemistry, biology and other fields. There is a great interest in generating Voronoi diagrams for real-time applications that can be made by means of parallel analog computation. We report the observation of self-organized Voronoi diagrams as a pattern arising in a barrier gas-discharge system. It is shown experimentally that this phenomenon provides an opportunity to generate Voronoi diagrams in a parallel way for a given set of reference points on submillisecond time scale. © 2002 American Institute of Physics.
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52.80.-s Electric discharges
05.65.+b Self-organized systems

Vacuum ultraviolet luminous efficiency and plasma ion density in alternating current plasma display panels

Eun Ha Choi, Jeong Chull Ahn, Min Wug Moon, Yoon Jung, Myung Chul Choi, Yoonho Seo, Guangsup Cho, Han Sup Uhm, Kunihide Tachibana, Ki Woong Whang, and Magne Kristiansen

Appl. Phys. Lett. 81, 3341 (2002); http://dx.doi.org/10.1063/1.1518772 (3 pages) | Cited 16 times

Online Publication Date: 22 October 2002

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The correlation between the vacuum ultraviolet (VUV) luminous efficiency and the plasma ion density has been investigated in terms of the xenon mole fraction in the neon filling gas for alternating current plasma display panels. The VUV luminous efficiency and plasma ion density are found to have strong correlation and to be saturated at xenon mole fractions greater than 7% and gas pressures of 400 Torr. © 2002 American Institute of Physics.
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52.75.-d Plasma devices
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
85.60.Pg Display systems
52.80.-s Electric discharges
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Enhanced luminescence of pulsed-laser-deposited Y2O3:Eu3+ thin-film phosphors by Li doping

Soung-soo Yi, Jong Seong Bae, Byung Kee Moon, Jung Hyun Jeong, Jung-Chul Park, and Ill Won Kim

Appl. Phys. Lett. 81, 3344 (2002); http://dx.doi.org/10.1063/1.1517404 (3 pages) | Cited 41 times

Online Publication Date: 22 October 2002

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Y2O3:Eu3+ and Li-doped Y2O3:Eu3+ luminescent thin films have been grown on sapphire substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The photoluminescence (PL) brightness data obtained from Li-doped Y2O3:Eu3+ films grown under optimized conditions have indicated that sapphire is a promising substrate for the growth of high-quality Li-doped Y2O3:Eu3+ thin-film red phosphor. In particular, the incorporation of Li+ ions into Y2O3 lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped Y1.84Li0.08Eu0.08O3, whose brightness was increased by a factor of 2.7 in comparison with that of Y2O3:Eu3+ films. This phosphor may promise for application to the flat panel displays. © 2002 American Institute of Physics.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
81.15.Fg Pulsed laser ablation deposition

Kinetics of laser-induced low-temperature crystallization of amorphous silicon

Yu. L. Khait, R. Beserman, A. Chack, R. Weil, and W. Beyer

Appl. Phys. Lett. 81, 3347 (2002); http://dx.doi.org/10.1063/1.1516875 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2002

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A brief report on experimental and theoretical studies of the kinetics of the laser-induced crystallization (LIC) in undoped amorphous hydrogenated silicon is presented. It is shown that the LIC occurs at a substantially lower temperature and occurs at this temperature much faster compared to the thermal crystallization in a furnace. A nanoscopic kinetic electron-related model of the LIC is presented. The model explains the experimental observations as the integral effect of a huge amount of nanoscale picosecond atomic and electronic reconstructions leading to more stable material states which are generated by electron-assisted short-lived (picosecond) large energy fluctuations in nanometer material regions. © 2002 American Institute of Physics.
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64.70.K- Solid-solid transitions
61.72.Cc Kinetics of defect formation and annealing
42.62.Cf Industrial applications
61.82.Fk Semiconductors
61.43.Dq Amorphous semiconductors, metals, and alloys

Electrical isolation of ZnO by ion bombardment

S. O. Kucheyev, P. N. K. Deenapanray, C. Jagadish, J. S. Williams, Mitsuaki Yano, Kazuto Koike, Shigehiko Sasa, Masataka Inoue, and Ken-ichi Ogata

Appl. Phys. Lett. 81, 3350 (2002); http://dx.doi.org/10.1063/1.1518560 (3 pages) | Cited 30 times

Online Publication Date: 22 October 2002

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The evolution of sheet resistance of n-type single-crystal wurtzite ZnO epilayers exposed to bombardment with MeV 1H, 7Li, 16O, and 28Si ions at room temperature is studied in situ. We demonstrate that sheet resistance of ZnO can be increased by about 7 orders of magnitude as a result of ion irradiation. Due to extremely efficient dynamic annealing in ZnO, the ion doses needed for isolation of this material are about 2 orders of magnitude larger than corresponding doses in the case of another wide-bandgap semiconductor, GaN. Results also show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. However, in all the cases studied, defect-induced electrical isolation of ZnO is unstable to rapid thermal annealing at temperatures above ∼300 °C. © 2002 American Institute of Physics.
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73.61.Ga II-VI semiconductors
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.40.Ls Metallization, contacts, interconnects; device isolation

Improved stability of hydrogenated amorphous-silicon photosensitivity by ultraviolet illumination

Howard M. Branz, Yueqin Xu, Stephan Heck, and Wei Gao

Appl. Phys. Lett. 81, 3353 (2002); http://dx.doi.org/10.1063/1.1518566 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2002

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Postdeposition ultraviolet (UV) illumination, followed by etching, improves the stability of hydrogenated amorphous-silicon thin films against subsequent light-induced degradation of photosensitivity. The etch removes a heavily damaged layer extending about 100 nm below the surface, but beneath the damage, the UV has improved the stability of 200 to 300 nm of bulk film. The open-circuit voltage of Schottky solar cells is also stabilized by UV-etch treatment. Possible mechanisms are discussed. © 2002 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.61.Jc Amorphous semiconductors; glasses
73.61.Cw Elemental semiconductors
81.65.Cf Surface cleaning, etching, patterning

Cathodoluminescence of cubic boron nitride films deposited by chemical vapor deposition

W. J. Zhang, H. Kanda, and S. Matsumoto

Appl. Phys. Lett. 81, 3356 (2002); http://dx.doi.org/10.1063/1.1517717 (3 pages) | Cited 19 times

Online Publication Date: 22 October 2002

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Cathodoluminescence (CL) characteristics of cubic boron nitride (cBN) films deposited by chemical vapor deposition were investigated. Combined with the results from Fourier-transformed infrared spectroscopy and Raman spectroscopy, the dependence of the emission energy and intensity on the phase composition and crystallinity of the films was revealed. A broad emission band centered at about 3.12 eV for UCL (or US-1) as observed previously in undoped cBN single crystals synthesized by high-temperature, high-pressure method, and an emission band at about 2.48 eV for the A and B bands, due to multivacancy complexes of boron and nitrogen vacancies, were observed in the cBN films with high phase purity and high crystallinity. For the hexagonal boron nitride (hBN) phase, the main emission band up-shifted to high energy of 3.48–3.68 eV. A peak centered at 5.28 eV was observed in the spectra, which is believed the near-band-gap UV emission of hBN. © 2002 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors
68.55.Nq Composition and phase identification
81.05.Ea III-V semiconductors
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Fs III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Negatively curved spongy carbon

E. Barborini, P. Piseri, P. Milani, G. Benedek, C. Ducati, and J. Robertson

Appl. Phys. Lett. 81, 3359 (2002); http://dx.doi.org/10.1063/1.1516635 (3 pages) | Cited 17 times

Online Publication Date: 22 October 2002

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We describe the production and characterization of a form of nanostructured carbon consisting of fully connected, three-dimensional (3D) sp2 networks. This form of carbon is characterized by interconnected thin layers forming a spongy structure with meso- and macroporosity. It is produced by a pulsed microplasma cluster source in the presence of a very low concentration of metallorganic catalyst. The unique 3D structure and topology of the spongy carbon are very interesting for catalysis and electrochemical applications and for the investigation of negatively curved forms of carbon such as schwarzites. © 2002 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.16.Hc Catalytic methods
61.46.-w Structure of nanoscale materials
81.05.U- Carbon/carbon-based materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Rm Porous materials; granular materials
61.43.Gt Powders, porous materials
82.33.Ya Chemistry of MOCVD and other vapor deposition methods

Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures

I. Prévot, B. Vinter, X. Marcadet, and J. Massies

Appl. Phys. Lett. 81, 3362 (2002); http://dx.doi.org/10.1063/1.1517720 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2002

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Indium surface segregation is evidenced in real time by reflection high-energy electron diffraction (RHEED) during the molecular beam epitaxial growth of AlSb on InAs(Sb). The resulting interface width is determined from the RHEED specular beam intensity variation during the growth. It extends over several nanometers and increases with the growth temperature. Band structure simulations show that the indium segregation leads to a strong localization of the wave function associated to the first bound hole level at the AlSb on InAs(Sb) interface. © 2002 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
68.35.Ct Interface structure and roughness
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
73.20.At Surface states, band structure, electron density of states
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Band-edge photoluminescence of AlN epilayers

J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 81, 3365 (2002); http://dx.doi.org/10.1063/1.1518558 (3 pages) | Cited 51 times

Online Publication Date: 22 October 2002

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AlN epilayers with high optical qualities have been grown on sapphire substrates by metalorganic chemical vapor deposition. Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to probe the optical quality as well as optical transitions in the grown epilayers. Band-edge emission lines have been observed both at low and room temperatures and are 6.017 and 6.033 eV at 10 K. It was found that the peak (integrated) emission intensity of the deep impurity related transition is only about 1% (3%) of that of the band-edge transition at room temperature. The PL emission properties of AlN have been compared with those of GaN. It was shown that the optical quality as well as quantum efficiency of AlN epilayers is as good as that of GaN. © 2002 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Lateral composition modulation in mixed anion multilayers

C. Dorin, J. Mirecki Millunchick, and C. Wauchope

Appl. Phys. Lett. 81, 3368 (2002); http://dx.doi.org/10.1063/1.1517712 (3 pages) | Cited 2 times

Online Publication Date: 22 October 2002

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Lateral composition modulation on the group V sublattice has been observed in GaAs/GaSb short period superlattices. Cross sectional transmission electron microscopy and x-ray diffraction reciprocal space maps reveal that all structures are phase-separated with Sb compositions for the strongest modulated structure of x = 0.73 in the Sb-rich regions, x = 0.55 in the As-rich regions, and wavelengths 15 ⩽ Λ ⩽ 20 nm. The composition modulation observed in these films is not due to spinodal decomposition, because an alloy grown at the same conditions results in a homogeneous layer, but may be related to vertical stacking of quantum dots that nucleate during the growth of the structure. © 2002 American Institute of Physics.
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68.65.Cd Superlattices
64.75.-g Phase equilibria
68.65.Hb Quantum dots (patterned in quantum wells)

Precipitation of an icosahedrally symmetric ordered phase in Zr–Ti–Cu–Ni–Al metallic glasses

L. Q. Xing, Y. T. Shen, and K. F. Kelton

Appl. Phys. Lett. 81, 3371 (2002); http://dx.doi.org/10.1063/1.1511810 (3 pages) | Cited 9 times

Online Publication Date: 22 October 2002

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Results from a study of the precipitation of an icosahedrally symmetric ordered phase in Zr62−xTixCu20Ni8Al10 amorphous alloys are presented. The data indicate the development of icosahedral short-range order (similar to that in the ordered phase) in the undercooled melt during quenching, and in the amorphous phase with annealing in the supercooled liquid region. Precipitation is controlled by long-range diffusion in alloys made with less than 3 at. % Ti. The resulting lower nucleation rates and longer induction times lead to a fine microstructure that contains icosahedral phase (i phase) grains ranging from 50 to 100 nm in diameter. In the glasses made with 5–7.5 at. % Ti, the composition of the precipitating phase is more similar to that of the glass, lowering the kinetic nucleation barrier and leading to an extremely fine nanostructured devitrified material, with i phase grain sizes from 2 to 5 nm. The x-ray diffraction pattern from this phase is similar to that of the i phase. However, because the grain size is nearly the same as the edge length of the unit cell of a high-order crystal approximate phase, no distinction can be made between the i phase and crystal approximate phases in such nanostructured materials. © 2002 American Institute of Physics.
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81.30.Mh Solid-phase precipitation
61.44.Br Quasicrystals
61.43.Fs Glasses
61.46.-w Structure of nanoscale materials
64.60.Q- Nucleation
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
64.75.-g Phase equilibria
81.07.Bc Nanocrystalline materials
81.05.Kf Glasses (including metallic glasses)

Intersubband transitions in proton irradiated In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate

Qiaoying Zhou, M. O. Manasreh, B. D. Weaver, and M. Missous

Appl. Phys. Lett. 81, 3374 (2002); http://dx.doi.org/10.1063/1.1519726 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2002

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Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1×1014 cm−2 do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1×1014 cm−2 has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1×1015 cm−2 and completely depleted after irradiation with a dose of 3×1015 cm−2. Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered. © 2002 American Institute of Physics.
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73.21.Fg Quantum wells
78.67.De Quantum wells
78.30.Fs III-V and II-VI semiconductors
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing

Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon

Emiliano Bonera, Marco Fanciulli, and David N. Batchelder

Appl. Phys. Lett. 81, 3377 (2002); http://dx.doi.org/10.1063/1.1519105 (3 pages) | Cited 17 times

Online Publication Date: 22 October 2002

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This letter presents a method to measure stress by a Raman spectroscopic technique that combines high spatial resolution with tensorial analysis. The experiment is based on separating the contributions to the Raman spectrum from the marginal and paraxial rays of the collection cone of the objective. The stress tensor was measured over a 20 μm line scan with a resolution of 1 μm on a highly strained (001) silicon surface in proximity to a micrometric scratch by observing the different frequency shifts of three orthogonal crystal vibrations. © 2002 American Institute of Physics.
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78.30.Am Elemental semiconductors and insulators
78.68.+m Optical properties of surfaces
68.35.Ja Surface and interface dynamics and vibrations
81.05.Cy Elemental semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Strained M-plane GaN for the realization of polarization-sensitive photodetectors

Sandip Ghosh, O. Brandt, H. T. Grahn, and K. H. Ploog

Appl. Phys. Lett. 81, 3380 (2002); http://dx.doi.org/10.1063/1.1517408 (3 pages) | Cited 26 times

Online Publication Date: 22 October 2002

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We theoretically investigate the oscillator strengths of the three band-edge transitions and the resulting polarization anisotropy of the absorption coefficient for an M-plane ([1math00] oriented) GaN film as a function of an arbitrary in-plane strain. Light incident normally on an M-plane film can be completely polarized parallel or perpendicular to the unique c axis of wurtzite GaN. We show that for a particular range of M-plane strain, both the wavelength range, over which the polarization anisotropy in the absorption occurs, and its magnitude are enhanced. Consequently, strained M-plane GaN becomes a promising candidate for realizing polarization-sensitive photodetectors. For such an application, we also determine the strain dependence of the operating wavelength characteristics. © 2002 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.05.Ea III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors
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Ab initio calculations of vacancies in SixGe1−x

G. M. Dalpian, P. Venezuela, Antônio J. R. da Silva, and A. Fazzio

Appl. Phys. Lett. 81, 3383 (2002); http://dx.doi.org/10.1063/1.1517172 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2002

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Ab initio calculations are used to investigate the structural and electronic properties of vacancies in SixGe1−x. The (++), (+), (0), and (−) charge states are studied and the substitutional disorder of the alloy is considered explicitly. We found a linear relationship between the effective-U for the system formed by the (++), (+), and (0) charge states and the number of Si atoms in the first neighborhood of a vacancy (NSi). The effective-U is positive when NSi is zero, and it is negative when NSi is 2 and 4. In all cases, the absolute value of the effective-U in the alloy is significantly smaller than its value for pure Si and pure Ge. © 2002 American Institute of Physics.
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71.55.Ht Other nonmetals
61.72.J- Point defects and defect clusters
71.15.-m Methods of electronic structure calculations
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