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28 Oct 2002

Volume 81, Issue 18, pp. 3311-3500

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Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si

J. M. Howard, V. Craciun, C. Essary, and R. K. Singh

Appl. Phys. Lett. 81, 3431 (2002); http://dx.doi.org/10.1063/1.1517407 (3 pages) | Cited 22 times

Online Publication Date: 22 October 2002

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High-k materials deposited directly on silicon exhibit an interfacial layer between the grown layer and the underlying substrate. This is of particular concern in metal–oxide–semiconductor technologies where these layers have a deleterious effect on the overall capacitance of the resulting devices. In this letter, the growth and properties of this silicatelike interfacial layer are examined after postdeposition anneals in a vacuum, inert, and oxidizing atmospheres. X-ray reflectivity, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy have been used to characterize the growth and properties of this interfacial layer. © 2002 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
81.40.Gh Other heat and thermomechanical treatments
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.05.Cy Elemental semiconductors
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.35.Ct Interface structure and roughness
61.72.Cc Kinetics of defect formation and annealing
79.60.Jv Interfaces; heterostructures; nanostructures
66.30.Ny Chemical interdiffusion; diffusion barriers
78.30.-j Infrared and Raman spectra
78.66.Nk Insulators

Dielectric relaxation studies of Bi-doping effects on the oxygen-ion diffusion in La2−xBixMo2O9 oxide-ion conductors

X. P. Wang, Q. F. Fang, Z. S. Li, G. G. Zhang, and Z. G. Yi

Appl. Phys. Lett. 81, 3434 (2002); http://dx.doi.org/10.1063/1.1518151 (3 pages) | Cited 27 times

Online Publication Date: 22 October 2002

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Two dielectric relaxation peaks associated with oxygen-ion diffusion in the oxide-ion conductors La2−xBixMo2O9 (x = 0.05, 0.1, and 0.15) have been studied. It is found that the activation energies of the two peaks increase with increasing Bi-doping concentration, which results from the blocking effects of the lone-pair electrons of Bi3+ ions. From the different effects of Bi doping on the two peaks, the diffusion paths of oxygen ions corresponding to each peak are confirmed. Significantly, it is revealed that Bi doping could enhance the ionic conductivity of La2Mo2O9 at lower temperatures. © 2002 American Institute of Physics.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
77.22.Gm Dielectric loss and relaxation

Evidence for forward domain growth being rate-limiting step in polarization switching in 〈111〉-oriented-Pb(Zr0.45Ti0.55)O3 thin-film capacitors

Seungbum Hong and Nava Setter

Appl. Phys. Lett. 81, 3437 (2002); http://dx.doi.org/10.1063/1.1517396 (3 pages) | Cited 12 times

Online Publication Date: 22 October 2002

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We studied polarization switching of 295 nm thick 〈111〉-oriented-Pb(Zr0.45Ti0.55)O3 (PZT) thin-film capacitors through a polarization hysteresis loop and piezoelectric force microscopy (PFM) on top of the Pt electrode. Positive voltage pulses of 450 kV/cm and 2.5 ms were applied to the top as a poling pulse. Negative pulses ranging from −45 to −60 kV/cm at an interval of 3 kV/cm were applied to the top electrode. After each pulse, we performed PFM imaging by applying 17 kHz ac voltage of 1 V peak to peak to the bottom electrode while grounding the top one and the tip. The first-harmonic amplitude and phase of the tip vibration signal were mapped over the scanned area of 10×10 μm2. Subsequently, we measured the polarization hysteresis curve at 100 Hz after each domain image acquisition to estimate the volume fraction of switched polarization induced by the positive voltage pulses. We analyzed the areal fraction of switched domains as a function of pulse voltage from phase images and compared it with the volume fraction obtained from the hysteresis loops. Based on the evolution of domain images and the comparison plots of the areal and volume fractions of switched domains, we conclude that forward domain growth is a rate-limiting step during polarization reversal in 〈111〉-oriented-PZT thin-film capacitors. © 2002 American Institute of Physics.
Show PACS
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena

Flexoelectric polarization of barium strontium titanate in the paraelectric state

Wenhui Ma and L. Eric Cross

Appl. Phys. Lett. 81, 3440 (2002); http://dx.doi.org/10.1063/1.1518559 (3 pages) | Cited 53 times

Online Publication Date: 22 October 2002

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The strain-gradient-induced polarization (flexoelectric effect) was investigated in Ba0.67Sr0.33TiO3 (BST) ceramic at temperatures above the 21 °C Curie point. At 23 °C the flexoelectric coefficient μ12 was more than one order of magnitude greater than the highest value measured in lead magnesium niobate ceramic. Over the temperature range of linear Curie–Weiss behavior, the coefficient μ12 was roughly proportional to the dielectric permittivity; however, the constant of proportionality was higher than predicted for simple ionic solids. The unexpected behavior in the BST ceramic suggests the need for a broader database of flexoelectric coefficients. © 2002 American Institute of Physics.
Show PACS
77.22.Ej Polarization and depolarization
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)

Lattice instabilities in (Pb,Cd)TiO3 alloys

S. V. Halilov, M. Fornari, and D. J. Singh

Appl. Phys. Lett. 81, 3443 (2002); http://dx.doi.org/10.1063/1.1518562 (3 pages) | Cited 19 times

Online Publication Date: 22 October 2002

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We report density functional calculations of the lattice instabilities of CdTiO3 and Pb0.5Cd0.5TiO3 supercells. The dominant instabilities in CdTiO3 are against TiO6 octahedral rotation, as may be expected from its Pnma structure. However, Pb substitution for Cd rapidly supresses this instability in favor of A-site driven ferroelectricity. At the 50% Pb composition, the rotational, rhombohedral ferroelectric and tetragonal (TET) ferroelectric instabilities of the cubic perovskite structure are comparable in energy, and moreover a rather large c/a ratio is found for the TET state. This strongly suggests investigation of the Pb rich part of the (Cd,Pb)TiO3 pseudobinary and minor modifications to it as potential high performance piezoelectric materials. © 2002 American Institute of Physics.
Show PACS
77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
61.66.Fn Inorganic compounds
64.70.K- Solid-solid transitions
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
81.30.Dz Phase diagrams of other materials
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