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28 Oct 2002

Volume 81, Issue 18, pp. 3311-3500

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Operation of photonic crystal membrane lasers above room temperature

Po-Tsung Lee, J. R. Cao, Sang-Jun Choi, Zhi-Jian Wei, John D. O’Brien, and P. Daniel Dapkus

Appl. Phys. Lett. 81, 3311 (2002); http://dx.doi.org/10.1063/1.1517409 (3 pages) | Cited 24 times

Online Publication Date: 22 October 2002

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Operation of photonic crystal lasers for substrate temperatures as high as 50 °C is reported. The temperature dependence of the lasing wavelength and the threshold pump power is also investigated. The characteristic temperature To is 37.7 K. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.70.Qs Photonic bandgap materials
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.50.-p Quantum optics

Light-controlled photon tunneling

Igor I. Smolyaninov, Christopher C. Davis, and Anatoly V. Zayats

Appl. Phys. Lett. 81, 3314 (2002); http://dx.doi.org/10.1063/1.1518778 (3 pages) | Cited 11 times

Online Publication Date: 22 October 2002

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Recent measurements of photon tunneling through individual subwavelength pinholes in a gold film covered with a layer of polydiacetylene [Phys. Rev. Lett. 88, 187402 (2002)] has provided strong indication of “photon blockade” effects similar to Coulomb blockade phenomena observed in single-electron tunneling experiments. Here we report the observation of photon tunneling being blocked (gated) by light at a different wavelength. This suggests the possibility of building a class of “gated” photon tunneling devices for all-optical signal processing. © 2002 American Institute of Physics.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.50.-p Quantum optics
42.65.-k Nonlinear optics

Wideband sub-Poissonian light generation in light-emitting diodes incorporating a heavily-doped active region

K. Tanaka, A. Higashi, H. Yuji, R. Masuyama, Y. Kadoya, and M. Yamanishi

Appl. Phys. Lett. 81, 3317 (2002); http://dx.doi.org/10.1063/1.1517725 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2002

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We investigated the generation of sub-Poissonian light in light-emitting diodes (LEDs) in which the active region is heavily doped with Be. The squeezing of the intensity-fluctuation below the full-shot-noise level was observed in a wide frequency range, near-dc to 1.5 GHz. From the noise-suppression spectra, we evaluated the radiative recombination lifetime of electrons in the active region and confirmed that the lifetime is reduced with increasing doping density. The results demonstrate clearly the excellent noise properties as well as the capability of high-speed modulation of the LEDs. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.50.Td Noise processes and phenomena
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Micromachined Fabry–Perot interferometer for motion detection

Richard L. Waters and Monti E. Aklufi

Appl. Phys. Lett. 81, 3320 (2002); http://dx.doi.org/10.1063/1.1518557 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2002

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The monolithic integration of a Fabry–Perot interferometer and a (100) silicon photodiode is reported for use as a highly sensitive transduction method in the detection of minute displacements of a proof mass attached to a spring. The combination results in a compact device with active transistor-like amplification and minimal parasitic elements. The transducer is fabricated using standard surface micromachining techniques. The finesse of the optical cavity, incident optical power, and geometry of the mirror and support structure control the sensitivity of the transducer. A transduction of more than 2285 A/m, percent change in transmission with displacement of 3%/nm, small-signal voltage amplification of 460 V/V, output resistance of 100 MΩ and transconductance of 1 mA/V have been obtained thus far for a single device without amplification. © 2002 American Institute of Physics.
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06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
07.60.Ly Interferometers
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
06.60.Vz Workshop procedures (welding, machining, lubrication, bearings, etc.)
81.20.Wk Machining, milling
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.86.+b Optical workshop techniques
85.60.Dw Photodiodes; phototransistors; photoresistors

Terahertz-wave surface-emitted difference frequency generation in slant-stripe-type periodically poled LiNbO3 crystal

Yuzo Sasaki, Avetisyan Yuri, Kodo Kawase, and Hiromasa Ito

Appl. Phys. Lett. 81, 3323 (2002); http://dx.doi.org/10.1063/1.1518779 (3 pages) | Cited 46 times

Online Publication Date: 22 October 2002

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We demonstrate terahertz-wave (THz-wave) surface-emitted difference frequency generation with nanosecond pulse duration. A slant-stripe-type periodically poled lithium niobate (PPLN) crystal was used to realize the quasi-phase-matching in two mutually perpendicular directions of optical and THz-wave propagation. A THz-wave with a wavelength near 200 μm was generated by mixing the radiation of a dual-signal-wave optical parametric oscillator based on a periodically phase-reversed PPLN crystal. © 2002 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Mp Nonlinear optical crystals

Multiple-wavelength second-harmonic generation in aperiodic optical superlattices

H. Liu, S. N. Zhu, Y. Y. Zhu, N. B. Ming, X. C. Lin, W. J. Ling, A. Y. Yao, and Z. Y. Xu

Appl. Phys. Lett. 81, 3326 (2002); http://dx.doi.org/10.1063/1.1518565 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2002

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We present a kind of aperiodic structure for the generation of multiple-wavelength second harmonic in a quasi-phase-matching scheme. In order to confirm its efficiency, a LiTaO3 superlattice with such an aperiodic domain-inverted structure was designed and fabricated. The second-harmonic generation at four present wavelengths was experimentally demonstrated from the superlattice with high and nearly equal conversion efficiencies. The tested result is in good agreement with theoretical consideration. The method may be used for the design of optical superlattices to construct multiple-wavelength lasers and wavelength converters for all-optical network. © 2002 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Nk Insulators
42.79.Nv Optical frequency converters
42.70.-a Optical materials
42.79.Wc Optical coatings
68.65.Ac Multilayers

Nondoped-type white organic electroluminescent devices utilizing complementary color and exciton diffusion

Toshie Tsuji, Shigeki Naka, Hiroyuki Okada, and Hiroyoshi Onnagawa

Appl. Phys. Lett. 81, 3329 (2002); http://dx.doi.org/10.1063/1.1516629 (3 pages) | Cited 49 times

Online Publication Date: 22 October 2002

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We fabricated nondoped white organic electroluminescent devices using vacuum-deposited thin films of blue-emitting 4,4′-bis[N-1-napthyl-N-phenyl-amino]biphenyl (α-NPD) and orange-emitting 4-(dicyanomethylene)-2-metyl-6-(p-dimethyl aminostyryl)-4H-pyran (DCM), a hole-blocking layer of 2-(4-biphenyl)-5-(p-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD) and electron-transporting tris(8-quinolinolato) aluminum (III). Excitons formed at the α-NPD/tBu-PBD interface sequentially transfer their energy to α-NPD via the Förster mechanism. The exciton is captured by an ultrathin DCM layer located within the pure α-NPD layer. The position of the DCM determines the device spectrum, and enables a white emission to be achieved. The spectrum is not sensitive to the voltage applied, and the devices show maximum luminance of about 1000 cd/m2. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
71.35.-y Excitons and related phenomena

Domain switching characteristics and fabrication of periodically poled potassium niobate for second-harmonic generation

Joong Hyun Kim and Choon Sup Yoon

Appl. Phys. Lett. 81, 3332 (2002); http://dx.doi.org/10.1063/1.1517722 (3 pages) | Cited 9 times

Online Publication Date: 22 October 2002

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We report on the 180° domain switching characteristics and fabrication of periodically poled KNbO3 for second-harmonic generation. Using a modified triangular pulse, a periodically poled KNbO3 of very high quality was fabricated with dimensions of 3×4×0.925 (a×b×c) mm3 and a period of 32.5 μm to utilize the d31 component of the second-order nonlinear optical coefficient tensor. An efficient second-harmonic generation of a mode-locked Nd:YAG laser, operated at 1064 nm with a pulse width of 35 ps, was achieved with a maximum conversion efficiency of 34.8%. The effective nonlinear coefficient, measured in the limit of undepleted pump approximation, was 5.2 pm/V, which is 68% of the theoretical value. © 2002 American Institute of Physics.
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42.70.Mp Nonlinear optical crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

All-optical switching and logic gating with spatial solitons in liquid crystals

Marco Peccianti, Claudio Conti, Gaetano Assanto, Antonio De Luca, and Cesare Umeton

Appl. Phys. Lett. 81, 3335 (2002); http://dx.doi.org/10.1063/1.1519101 (3 pages) | Cited 83 times

Online Publication Date: 22 October 2002

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Using mW light beams to generate spatial solitons in nematic liquid crystals, all-optical switching/logic can be performed on a signal launched in the soliton-induced waveguides. Through the collisional behavior of solitons in a nonlocal medium, the signal can be steered in angle and output position. A power-dependent X junction, AND, and NOR gates are demonstrated. © 2002 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Tg Optical solitons; nonlinear guided waves
42.70.Df Liquid crystals
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
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