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28 Oct 2002

Volume 81, Issue 18, pp. 3311-3500

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Enhanced luminescence of pulsed-laser-deposited Y2O3:Eu3+ thin-film phosphors by Li doping

Soung-soo Yi, Jong Seong Bae, Byung Kee Moon, Jung Hyun Jeong, Jung-Chul Park, and Ill Won Kim

Appl. Phys. Lett. 81, 3344 (2002); http://dx.doi.org/10.1063/1.1517404 (3 pages) | Cited 41 times

Online Publication Date: 22 October 2002

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Y2O3:Eu3+ and Li-doped Y2O3:Eu3+ luminescent thin films have been grown on sapphire substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The photoluminescence (PL) brightness data obtained from Li-doped Y2O3:Eu3+ films grown under optimized conditions have indicated that sapphire is a promising substrate for the growth of high-quality Li-doped Y2O3:Eu3+ thin-film red phosphor. In particular, the incorporation of Li+ ions into Y2O3 lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped Y1.84Li0.08Eu0.08O3, whose brightness was increased by a factor of 2.7 in comparison with that of Y2O3:Eu3+ films. This phosphor may promise for application to the flat panel displays. © 2002 American Institute of Physics.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
81.15.Fg Pulsed laser ablation deposition

Kinetics of laser-induced low-temperature crystallization of amorphous silicon

Yu. L. Khait, R. Beserman, A. Chack, R. Weil, and W. Beyer

Appl. Phys. Lett. 81, 3347 (2002); http://dx.doi.org/10.1063/1.1516875 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2002

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A brief report on experimental and theoretical studies of the kinetics of the laser-induced crystallization (LIC) in undoped amorphous hydrogenated silicon is presented. It is shown that the LIC occurs at a substantially lower temperature and occurs at this temperature much faster compared to the thermal crystallization in a furnace. A nanoscopic kinetic electron-related model of the LIC is presented. The model explains the experimental observations as the integral effect of a huge amount of nanoscale picosecond atomic and electronic reconstructions leading to more stable material states which are generated by electron-assisted short-lived (picosecond) large energy fluctuations in nanometer material regions. © 2002 American Institute of Physics.
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64.70.K- Solid-solid transitions
61.72.Cc Kinetics of defect formation and annealing
42.62.Cf Industrial applications
61.82.Fk Semiconductors
61.43.Dq Amorphous semiconductors, metals, and alloys

Electrical isolation of ZnO by ion bombardment

S. O. Kucheyev, P. N. K. Deenapanray, C. Jagadish, J. S. Williams, Mitsuaki Yano, Kazuto Koike, Shigehiko Sasa, Masataka Inoue, and Ken-ichi Ogata

Appl. Phys. Lett. 81, 3350 (2002); http://dx.doi.org/10.1063/1.1518560 (3 pages) | Cited 30 times

Online Publication Date: 22 October 2002

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The evolution of sheet resistance of n-type single-crystal wurtzite ZnO epilayers exposed to bombardment with MeV 1H, 7Li, 16O, and 28Si ions at room temperature is studied in situ. We demonstrate that sheet resistance of ZnO can be increased by about 7 orders of magnitude as a result of ion irradiation. Due to extremely efficient dynamic annealing in ZnO, the ion doses needed for isolation of this material are about 2 orders of magnitude larger than corresponding doses in the case of another wide-bandgap semiconductor, GaN. Results also show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. However, in all the cases studied, defect-induced electrical isolation of ZnO is unstable to rapid thermal annealing at temperatures above ∼300 °C. © 2002 American Institute of Physics.
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73.61.Ga II-VI semiconductors
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.40.Ls Metallization, contacts, interconnects; device isolation

Improved stability of hydrogenated amorphous-silicon photosensitivity by ultraviolet illumination

Howard M. Branz, Yueqin Xu, Stephan Heck, and Wei Gao

Appl. Phys. Lett. 81, 3353 (2002); http://dx.doi.org/10.1063/1.1518566 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2002

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Postdeposition ultraviolet (UV) illumination, followed by etching, improves the stability of hydrogenated amorphous-silicon thin films against subsequent light-induced degradation of photosensitivity. The etch removes a heavily damaged layer extending about 100 nm below the surface, but beneath the damage, the UV has improved the stability of 200 to 300 nm of bulk film. The open-circuit voltage of Schottky solar cells is also stabilized by UV-etch treatment. Possible mechanisms are discussed. © 2002 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.61.Jc Amorphous semiconductors; glasses
73.61.Cw Elemental semiconductors
81.65.Cf Surface cleaning, etching, patterning

Cathodoluminescence of cubic boron nitride films deposited by chemical vapor deposition

W. J. Zhang, H. Kanda, and S. Matsumoto

Appl. Phys. Lett. 81, 3356 (2002); http://dx.doi.org/10.1063/1.1517717 (3 pages) | Cited 19 times

Online Publication Date: 22 October 2002

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Cathodoluminescence (CL) characteristics of cubic boron nitride (cBN) films deposited by chemical vapor deposition were investigated. Combined with the results from Fourier-transformed infrared spectroscopy and Raman spectroscopy, the dependence of the emission energy and intensity on the phase composition and crystallinity of the films was revealed. A broad emission band centered at about 3.12 eV for UCL (or US-1) as observed previously in undoped cBN single crystals synthesized by high-temperature, high-pressure method, and an emission band at about 2.48 eV for the A and B bands, due to multivacancy complexes of boron and nitrogen vacancies, were observed in the cBN films with high phase purity and high crystallinity. For the hexagonal boron nitride (hBN) phase, the main emission band up-shifted to high energy of 3.48–3.68 eV. A peak centered at 5.28 eV was observed in the spectra, which is believed the near-band-gap UV emission of hBN. © 2002 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors
68.55.Nq Composition and phase identification
81.05.Ea III-V semiconductors
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Fs III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Negatively curved spongy carbon

E. Barborini, P. Piseri, P. Milani, G. Benedek, C. Ducati, and J. Robertson

Appl. Phys. Lett. 81, 3359 (2002); http://dx.doi.org/10.1063/1.1516635 (3 pages) | Cited 17 times

Online Publication Date: 22 October 2002

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We describe the production and characterization of a form of nanostructured carbon consisting of fully connected, three-dimensional (3D) sp2 networks. This form of carbon is characterized by interconnected thin layers forming a spongy structure with meso- and macroporosity. It is produced by a pulsed microplasma cluster source in the presence of a very low concentration of metallorganic catalyst. The unique 3D structure and topology of the spongy carbon are very interesting for catalysis and electrochemical applications and for the investigation of negatively curved forms of carbon such as schwarzites. © 2002 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.16.Hc Catalytic methods
61.46.-w Structure of nanoscale materials
81.05.U- Carbon/carbon-based materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Rm Porous materials; granular materials
61.43.Gt Powders, porous materials
82.33.Ya Chemistry of MOCVD and other vapor deposition methods

Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures

I. Prévot, B. Vinter, X. Marcadet, and J. Massies

Appl. Phys. Lett. 81, 3362 (2002); http://dx.doi.org/10.1063/1.1517720 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2002

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Indium surface segregation is evidenced in real time by reflection high-energy electron diffraction (RHEED) during the molecular beam epitaxial growth of AlSb on InAs(Sb). The resulting interface width is determined from the RHEED specular beam intensity variation during the growth. It extends over several nanometers and increases with the growth temperature. Band structure simulations show that the indium segregation leads to a strong localization of the wave function associated to the first bound hole level at the AlSb on InAs(Sb) interface. © 2002 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
68.35.Ct Interface structure and roughness
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
73.20.At Surface states, band structure, electron density of states
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Band-edge photoluminescence of AlN epilayers

J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 81, 3365 (2002); http://dx.doi.org/10.1063/1.1518558 (3 pages) | Cited 51 times

Online Publication Date: 22 October 2002

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AlN epilayers with high optical qualities have been grown on sapphire substrates by metalorganic chemical vapor deposition. Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to probe the optical quality as well as optical transitions in the grown epilayers. Band-edge emission lines have been observed both at low and room temperatures and are 6.017 and 6.033 eV at 10 K. It was found that the peak (integrated) emission intensity of the deep impurity related transition is only about 1% (3%) of that of the band-edge transition at room temperature. The PL emission properties of AlN have been compared with those of GaN. It was shown that the optical quality as well as quantum efficiency of AlN epilayers is as good as that of GaN. © 2002 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Lateral composition modulation in mixed anion multilayers

C. Dorin, J. Mirecki Millunchick, and C. Wauchope

Appl. Phys. Lett. 81, 3368 (2002); http://dx.doi.org/10.1063/1.1517712 (3 pages) | Cited 2 times

Online Publication Date: 22 October 2002

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Lateral composition modulation on the group V sublattice has been observed in GaAs/GaSb short period superlattices. Cross sectional transmission electron microscopy and x-ray diffraction reciprocal space maps reveal that all structures are phase-separated with Sb compositions for the strongest modulated structure of x = 0.73 in the Sb-rich regions, x = 0.55 in the As-rich regions, and wavelengths 15 ⩽ Λ ⩽ 20 nm. The composition modulation observed in these films is not due to spinodal decomposition, because an alloy grown at the same conditions results in a homogeneous layer, but may be related to vertical stacking of quantum dots that nucleate during the growth of the structure. © 2002 American Institute of Physics.
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68.65.Cd Superlattices
64.75.-g Phase equilibria
68.65.Hb Quantum dots (patterned in quantum wells)

Precipitation of an icosahedrally symmetric ordered phase in Zr–Ti–Cu–Ni–Al metallic glasses

L. Q. Xing, Y. T. Shen, and K. F. Kelton

Appl. Phys. Lett. 81, 3371 (2002); http://dx.doi.org/10.1063/1.1511810 (3 pages) | Cited 9 times

Online Publication Date: 22 October 2002

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Results from a study of the precipitation of an icosahedrally symmetric ordered phase in Zr62−xTixCu20Ni8Al10 amorphous alloys are presented. The data indicate the development of icosahedral short-range order (similar to that in the ordered phase) in the undercooled melt during quenching, and in the amorphous phase with annealing in the supercooled liquid region. Precipitation is controlled by long-range diffusion in alloys made with less than 3 at. % Ti. The resulting lower nucleation rates and longer induction times lead to a fine microstructure that contains icosahedral phase (i phase) grains ranging from 50 to 100 nm in diameter. In the glasses made with 5–7.5 at. % Ti, the composition of the precipitating phase is more similar to that of the glass, lowering the kinetic nucleation barrier and leading to an extremely fine nanostructured devitrified material, with i phase grain sizes from 2 to 5 nm. The x-ray diffraction pattern from this phase is similar to that of the i phase. However, because the grain size is nearly the same as the edge length of the unit cell of a high-order crystal approximate phase, no distinction can be made between the i phase and crystal approximate phases in such nanostructured materials. © 2002 American Institute of Physics.
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81.30.Mh Solid-phase precipitation
61.44.Br Quasicrystals
61.43.Fs Glasses
61.46.-w Structure of nanoscale materials
64.60.Q- Nucleation
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
64.75.-g Phase equilibria
81.07.Bc Nanocrystalline materials
81.05.Kf Glasses (including metallic glasses)

Intersubband transitions in proton irradiated In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate

Qiaoying Zhou, M. O. Manasreh, B. D. Weaver, and M. Missous

Appl. Phys. Lett. 81, 3374 (2002); http://dx.doi.org/10.1063/1.1519726 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2002

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Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1×1014 cm−2 do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1×1014 cm−2 has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1×1015 cm−2 and completely depleted after irradiation with a dose of 3×1015 cm−2. Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered. © 2002 American Institute of Physics.
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73.21.Fg Quantum wells
78.67.De Quantum wells
78.30.Fs III-V and II-VI semiconductors
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing

Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon

Emiliano Bonera, Marco Fanciulli, and David N. Batchelder

Appl. Phys. Lett. 81, 3377 (2002); http://dx.doi.org/10.1063/1.1519105 (3 pages) | Cited 17 times

Online Publication Date: 22 October 2002

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This letter presents a method to measure stress by a Raman spectroscopic technique that combines high spatial resolution with tensorial analysis. The experiment is based on separating the contributions to the Raman spectrum from the marginal and paraxial rays of the collection cone of the objective. The stress tensor was measured over a 20 μm line scan with a resolution of 1 μm on a highly strained (001) silicon surface in proximity to a micrometric scratch by observing the different frequency shifts of three orthogonal crystal vibrations. © 2002 American Institute of Physics.
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78.30.Am Elemental semiconductors and insulators
78.68.+m Optical properties of surfaces
68.35.Ja Surface and interface dynamics and vibrations
81.05.Cy Elemental semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Strained M-plane GaN for the realization of polarization-sensitive photodetectors

Sandip Ghosh, O. Brandt, H. T. Grahn, and K. H. Ploog

Appl. Phys. Lett. 81, 3380 (2002); http://dx.doi.org/10.1063/1.1517408 (3 pages) | Cited 26 times

Online Publication Date: 22 October 2002

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We theoretically investigate the oscillator strengths of the three band-edge transitions and the resulting polarization anisotropy of the absorption coefficient for an M-plane ([1math00] oriented) GaN film as a function of an arbitrary in-plane strain. Light incident normally on an M-plane film can be completely polarized parallel or perpendicular to the unique c axis of wurtzite GaN. We show that for a particular range of M-plane strain, both the wavelength range, over which the polarization anisotropy in the absorption occurs, and its magnitude are enhanced. Consequently, strained M-plane GaN becomes a promising candidate for realizing polarization-sensitive photodetectors. For such an application, we also determine the strain dependence of the operating wavelength characteristics. © 2002 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.05.Ea III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors
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