APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Nov 2002

Volume 81, Issue 19, pp. 3519-3685

Page 2 of 3 Pages Previous Page Next Page | Jump to Page
back to top
RSS Feeds

Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots

Shuwei Li and Kazuto Koike

Appl. Phys. Lett. 81, 3594 (2002); http://dx.doi.org/10.1063/1.1515365 (3 pages) | Cited 2 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An attractive feature of vertically stacked InAs/AlGaAs quantum dots (QDs), which were buried in AlGaAs high potential barrier and spacer epilayer and grown by molecular-beam epitaxy with size-controlled growth, exhibits an unknown macroscopic quantum phenomenon (i.e., phase-change splitting of the ground state). In the vertically aligned QDs, due to many-body effect and quantum-mechanical renormalization, the electron ground state splits into a series of peaks of which the intensity gradually, systematically decreases to redshift direction with a wavelength constant. By the way, energy levels of electrons and holes might really be “seen” by deep level transient spectroscopy to which the photoluminescence experiment is in an excellent agreement. © 2002 American Institute of Physics.
Show PACS
81.07.Ta Quantum dots
81.16.Dn Self-assembly
78.67.Hc Quantum dots
back to top
RSS Feeds

La1−xBaxMnO3 epitaxial thin films by pulsed-laser deposition: A consequence of strain stabilization

A. K. Pradhan, D. R. Sahu, B. K. Roul, and Y. Feng

Appl. Phys. Lett. 81, 3597 (2002); http://dx.doi.org/10.1063/1.1518157 (3 pages) | Cited 14 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report transport, magnetization, and transmission-electron-microscopic studies of La1−xBaxMnO3/SrTiO3 thin films grown by pulsed-laser deposition. The metal–insulator transition is remarkably sharp, and the high value of the temperature coefficient of resistivity is significantly relevant for the required value for the infrared imaging applications. We have demonstrated that the strain-induced property can be tuned and stabilized in La1−xBaxMnO3 films simply by changing the doping level (La/Ba ratio) and addition of metal ions (Ag) for applications at desirable temperature regime close to room temperature. © 2002 American Institute of Physics.
Show PACS
73.61.Ng Insulators
81.15.Fg Pulsed laser ablation deposition
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.47.De Giant magnetoresistance
75.70.Ak Magnetic properties of monolayers and thin films
68.37.Lp Transmission electron microscopy (TEM)
71.30.+h Metal-insulator transitions and other electronic transitions
72.60.+g Mixed conductivity and conductivity transitions
75.50.Dd Nonmetallic ferromagnetic materials
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.20.My Galvanomagnetic and other magnetotransport effects

Realization and properties of MgB2 metal-masked ion damage junctions

D.-J. Kang, N. H. Peng, R. Webb, C. Jeynes, J. H. Yun, S. H. Moon, B. Oh, G. Burnell, E. J. Tarte, D. F. Moore, and M. G. Blamire

Appl. Phys. Lett. 81, 3600 (2002); http://dx.doi.org/10.1063/1.1519965 (3 pages) | Cited 9 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ion beam damage combined with nanoscale focused-ion-beam direct milling was used to create manufacturable superconductor–normal–superconductor type (SNS) Josephson junctions in 100-nm-thick MgB2 with TC of 38 K. The junctions show nonhysteretic current–voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB2 metal-masked ion damage junctions are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration. © 2002 American Institute of Physics.
Show PACS
74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
61.80.Jh Ion radiation effects
74.25.Sv Critical currents

The superconducting gap of in situ MgB2 thin films by microwave surface impedance measurements

N. Hakim, C. Kusko, S. Sridhar, A. Soukiassian, X. H. Zeng, and X. X. Xi

Appl. Phys. Lett. 81, 3603 (2002); http://dx.doi.org/10.1063/1.1517181 (3 pages) | Cited 5 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Precision measurements of the microwave surface resistance Rs of in situ MgB2 films directly reveal an exponential behavior of Rs at low temperature indicating a fully-gapped order parameter. The entire temperature dependence of Rs is well described by a Mattis–Bardeen formalism, but with a small gap ratio of Δ(0)/kTc = 0.72, corresponding to Δ(0) = 1.9 meV. © 2002 American Institute of Physics.
Show PACS
74.25.Jb Electronic structure (photoemission, etc.)
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.78.-w Superconducting films and low-dimensional structures
74.25.F- Transport properties

Ferromagnetism in Cr-doped Ge

Sungyoul Choi, Soon Cheol Hong, Sunglae Cho, Yunki Kim, John B. Ketterson, Chi-Un Jung, K. Rhie, Bong-Jun Kim, and Y. C. Kim

Appl. Phys. Lett. 81, 3606 (2002); http://dx.doi.org/10.1063/1.1516613 (3 pages) | Cited 25 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have fabricated Cr-doped bulk Ge single crystal using the vertical gradient solidification method. The material shows ferromagnetic ordering at 126 K, as determined from temperature-dependent magnetization and resistance measurements. A sample with x = 0.01 was p type with nh = 3×1017 cm−3 at 350 K. The measured magnetic moment per Cr was 0.83μB at 5 K. © 2002 American Institute of Physics.
Show PACS
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
75.30.Cr Saturation moments and magnetic susceptibilities
72.80.Cw Elemental semiconductors

Magnetothermopower and magnon-assisted transport in ferromagnetic tunnel junctions

Edward McCann and Vladimir I. Fal’ko

Appl. Phys. Lett. 81, 3609 (2002); http://dx.doi.org/10.1063/1.1519730 (3 pages) | Cited 7 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a model of the thermopower in a mesoscopic tunnel junction between two ferromagnetic metals based upon magnon-assisted tunneling processes. In our model, the thermopower is generated in the course of thermal equilibration between two baths of magnons, mediated by electrons. We predict a particularly large thermopower effect in the case of a junction between two half-metallic ferromagnets with antiparallel polarizations, SAP ∼ −(kB/e), in contrast to SP ≈ 0 for a parallel configuration. © 2002 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
72.25.Mk Spin transport through interfaces
72.15.Jf Thermoelectric and thermomagnetic effects
75.30.Ds Spin waves
85.75.Mm Spin polarized resonant tunnel junctions
73.23.-b Electronic transport in mesoscopic systems

Control of magnetization reversal process with pinning layer in FePt thin films

Z. L. Zhao, J. P. Wang, J. S. Chen, and J. Ding

Appl. Phys. Lett. 81, 3612 (2002); http://dx.doi.org/10.1063/1.1518161 (3 pages) | Cited 12 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The magnetization reversal processes of in situ ordered FePt thin films prepared by magnetron sputtering have been studied. A kind of nonmagnetic Ru pinning layer inserted in the FePt magnetic layer was described to introduce controllable pinning sites. The magnetization reversal mechanism of FePt thin films was observed to shift from the typical domain-wall motion behavior to the nucleation mode with Ru pinning layer inserted. Coercivity enhancement was also observed with relative thinner Ru pinning layer inserted in the FePt film. © 2002 American Institute of Physics.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Bb Fe and its alloys
75.60.Jk Magnetization reversal mechanisms
75.30.Gw Magnetic anisotropy
81.15.Cd Deposition by sputtering
back to top
RSS Feeds

Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy

M. Porti, M. Nafría, M. C. Blüm, X. Aymerich, and S. Sadewasser

Appl. Phys. Lett. 81, 3615 (2002); http://dx.doi.org/10.1063/1.1519357 (3 pages) | Cited 14 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Atomic-force-microscopy-based techniques have been used to investigate at a nanometer scale the dielectric breakdown (BD) of ultrathin (<6 nm) SiO2 films of metal-oxide-semiconductor devices. The results show that BD leads to negative charge at the BD location and the amount of created charge has been estimated. Moreover, the comparison of the charge magnitude generated during current-limited stresses and stresses without current limit demonstrates that the observed BD induced negative charge is related to the structural damage created by the oxide BD. © 2002 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
85.30.Tv Field effect devices

Thermal stability of (HfO2)x(Al2O3)1−x on Si

H. Y. Yu, N. Wu, M. F. Li, Chunxiang Zhu, B. J. Cho, D.-L. Kwong, C. H. Tung, J. S. Pan, J. W. Chai, W. D. Wang, D. Z. Chi, C. H. Ang, J. Z. Zheng, and S. Ramanathan

Appl. Phys. Lett. 81, 3618 (2002); http://dx.doi.org/10.1063/1.1519733 (3 pages) | Cited 41 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The kinetics of the interfacial layer (IL) growth between Hf aluminates and the Si substrate during high-temperature rapid thermal annealing (RTA) in either N2 ( ∼ 10 Torr) or high vacuum ( ∼ 2×10−5 Torr) is studied by high-resolution x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy. The significant difference of the IL growth observed between high vacuum and relatively oxygen-rich N2 annealing (both at 1000 °C) is shown to be caused by the oxygen species from the annealing ambient. Our results also show that Hf aluminates exhibit much stronger resistance to oxygen diffusion than pure HfO2 during RTA in N2 ambient, and the resistance becomes stronger with more Al incorporated into HfO2. This observation is explained by the combined effects of (i) smaller oxygen diffusion coefficient of Al2O3 than HfO2, and (ii) higher crystallization temperature of the Hf aluminates. © 2002 American Institute of Physics.
Show PACS
68.60.Dv Thermal stability; thermal effects
68.55.A- Nucleation and growth
61.72.Cc Kinetics of defect formation and annealing
66.30.H- Self-diffusion and ionic conduction in nonmetals
68.37.Lp Transmission electron microscopy (TEM)
79.60.Jv Interfaces; heterostructures; nanostructures

Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Zhai Jiwei, M. H. Cheung, Zheng Kui Xu, Xin Li, Haydn Chen, Eugene V. Colla, and T. B. Wu

Appl. Phys. Lett. 81, 3621 (2002); http://dx.doi.org/10.1063/1.1519944 (3 pages) | Cited 17 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500–700 °C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 μC/cm2, which is equal to that observed in bulk samples. © 2002 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Ferroelectric BaPbO3/PbZr0.53Ti0.47/BaPbO3 heterostructures

Chun-Sheng Liang, Jenn-Ming Wu, and Ming-Chu Chang

Appl. Phys. Lett. 81, 3624 (2002); http://dx.doi.org/10.1063/1.1520332 (3 pages) | Cited 28 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
BaPbO3 (BPO)/PbZr0.53Ti0.47 (PZT)/BPO heterostructures were fabricated by combining the sol-gel and rf-magnetron sputtering techniques. Experimental results indicate that the BPO bottom electrodes effectively prevent the formation of the rosette structure of PZT, producing smooth surfaces. Additionally, ferroelectric, fatigue, and leakage current properties were markedly improved when both the top and the bottom electrodes were changed from Pt to BPO. These improvements are due to a superior electrode/ferroelectric interface. BPO is better than Pt and other oxide electrodes for use in PZT ferroelectric capacitors due to its remarkably improved properties and quite low growth temperature. © 2002 American Institute of Physics.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.15.Cd Deposition by sputtering
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films

HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

O. Renault, D. Samour, J.-F. Damlencourt, D. Blin, F. Martin, S. Marthon, N. T. Barrett, and P. Besson

Appl. Phys. Lett. 81, 3627 (2002); http://dx.doi.org/10.1063/1.1520334 (3 pages) | Cited 95 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
X-ray photoelectron spectroscopy using synchrotron radiation has been used to investigate the HfO2/SiO2 interface chemistry of high-quality 0.6 and 2.5 nm HfO2/0.6 nm SiO2/Si structures. The high energy resolution (0.15 eV) along with the high brightness level allows us to separate, unambiguously, on both Hf 4f and Si 2p core-level spectra, interfacial Hf–silicate bonds from bulk HfO2 and SiO2 contributions, thus making possible subsequent quantitative treatments and modeling of the interfacial layer structure. Careful assessment of the energy shift of the interfacial components shows that Si-rich Hf silicates are present. The underlying assumption that initial-state contribution dominates the observed Si 2p shift is briefly discussed. © 2002 American Institute of Physics.
Show PACS
68.35.Fx Diffusion; interface formation
68.35.Ct Interface structure and roughness
79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
73.20.-r Electron states at surfaces and interfaces

Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate

Moonju Cho, Jaehoo Park, Hong Bae Park, Cheol Seong Hwang, Jaehack Jeong, Kwang Soo Hyun, Young-Wug Kim, Chang-Bong Oh, and Hee-Sung Kang

Appl. Phys. Lett. 81, 3630 (2002); http://dx.doi.org/10.1063/1.1520333 (3 pages) | Cited 20 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
HfO2 thin films were deposited on SiNx-passivated Si wafers at 300 and 400 °C using an atomic-layer-deposition technique. The SiNx films were deposited by another atomic-layer-deposition process at 595 °C. The SiNx films worked well as barriers to both Si and O diffusion, resulting in a small decrease in the capacitance density even after post-annealing at temperatures up to 1000 °C, compared either to the HfO2 film deposited directly on Si or an Al2O3-barrier-layer/Si substrate. The decrease in the capacitance density after post-annealing, although relatively small, was due to Hf and O diffusion into the interface layer. Interestingly, post-annealing under an atmosphere containing small amount of oxygen (∼1%) decreased the capacitance density to a smaller degree. However, the interface and bulk capturing of the carrier was serious, resulting in a rather large hysteresis (∼100 mV) voltage in the capacitance–voltage measurements even after post-annealing. © 2002 American Institute of Physics.
Show PACS
68.60.Dv Thermal stability; thermal effects
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Fx Diffusion; interface formation
77.22.Ch Permittivity (dielectric function)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Observation of domain texture in poled Pb(Mg1/3Nb2/3)O3–PbTiO3 crystals

J. F. Li, B. Ruette, and D. Viehland

Appl. Phys. Lett. 81, 3633 (2002); http://dx.doi.org/10.1063/1.1519352 (3 pages) | Cited 2 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Mapping of domain distributions under constant Bragg conditions has been performed on poled (0.7)Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 crystals. Studies were done on crystals of cubic geometry, where each cube face was oriented along a 〈001〉c. Multiple domains with monoclinic limiting symmetry (angle ∼173°–176°) were observed on all three (001)c faces. Perpendicular to the poling direction, domain modulations were observed by a splitting of each variant. © 2002 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
back to top
RSS Feeds

Lateral diffusion of titanium disilicide as a route to contacting hybrid Si/organic nanostructures

V. Palermo, M. Buchanan, A. Bezinger, and R. A. Wolkow

Appl. Phys. Lett. 81, 3636 (2002); http://dx.doi.org/10.1063/1.1519959 (3 pages) | Cited 2 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We characterized microscopic patterns of TiSi2 using atomic force microscopy and scanning tunneling microscopy, to test the possibility of using silicide contacts for experiments on the nanoscopic scale. We observed the effect on the morphology of incomplete formation of the disilicide, and studied the growth of lateral extension due to atomic diffusion. Upon diffusion, the silicide forms a neat and clean interface some hundreds of nanometers from the bulk electrode. That spreading phenomenon is our central focus, as we believe it may be useful in future efforts to make narrowly spaced contacts. © 2002 American Institute of Physics.
Show PACS
81.07.Lk Nanocontacts
73.63.Rt Nanoscale contacts
68.35.Fx Diffusion; interface formation
81.07.Pr Organic-inorganic hybrid nanostructures
68.35.Ct Interface structure and roughness
68.37.Ps Atomic force microscopy (AFM)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

L. W. Teo, W. K. Choi, W. K. Chim, V. Ho, C. M. Moey, M. S. Tay, C. L. Heng, Y. Lei, D. A. Antoniadis, and E. A. Fitzgerald

Appl. Phys. Lett. 81, 3639 (2002); http://dx.doi.org/10.1063/1.1519355 (3 pages) | Cited 32 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The size of germanium (Ge) nanocrystals in a trilayer metal-insulator-semiconductor memory device was controlled by varying the thickness of the middle (co-sputtered Ge+SiO2) layer. From analyses using transmission electron microscopy and capacitance–voltage measurements, we deduced that both electrons and holes are most likely stored within the nanocrystals in the middle layer of the trilayer structure rather than at the interfaces of the nanocrystals with the oxide matrix. © 2002 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Exciton formation dynamics in crescent-shaped Quantum Wires

T. Yasuhira, K. Komori, R. Akimoto, X. L. Wang, M. Watanabe, and M. Ogura

Appl. Phys. Lett. 81, 3642 (2002); http://dx.doi.org/10.1063/1.1517721 (3 pages) | Cited 2 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated the ultrafast carrier dynamics in optically high-quality V-grooved GaAs/AlGaAs quantum wires using a highly sensitive nonlinear spectroscopy technique. It is found that, with resonant excitation, there is a blueshift due to exciton–exciton interaction within 0.3 ps followed by a redshift due to exciton relaxation. With nonresonant excitation, the redshift occurs due to the phonon emission during exciton formation. As a result, the exciton formation time and the exciton lifetime in the quantum wires are found to be 5 and 110 ps, respectively. © 2002 American Institute of Physics.
Show PACS
73.21.Hb Quantum wires
71.35.-y Excitons and related phenomena
78.66.Fd III-V semiconductors
73.63.Nm Quantum wires
78.47.-p Spectroscopy of solid state dynamics

Room-temperature single-electron tunneling in conducting polypyrrole nanotube

S. K. Saha

Appl. Phys. Lett. 81, 3645 (2002); http://dx.doi.org/10.1063/1.1519104 (3 pages) | Cited 21 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Observation of room-temperature single-electron tunneling (SET) in a conjugated polymer is reported. It is observed that conjugated polymers in the high doping level are composed of some ordered (metallic) and disordered (semiconducting) regions. This property has been exploited in conducting polypyrrole nanotubes to form some ordered regions separated by disordered regions. The nonlinear current–voltage and positive temperature coefficient of resistance in the high-temperature limit confirm the desired morphology of the tubes. Isolated metallic islands, which are necessary to observe SET have been formed disrupting the nanotube in the semiconducting (disordered) portions by applying a voltage pulse. © 2002 American Institute of Physics.
Show PACS
73.63.Fg Nanotubes
61.46.-w Structure of nanoscale materials

Field emission from well-aligned zinc oxide nanowires grown at low temperature

C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, and H. J. Lee

Appl. Phys. Lett. 81, 3648 (2002); http://dx.doi.org/10.1063/1.1518810 (3 pages) | Cited 465 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550 °C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1 μA/cm2. The emission current density from the ZnO nanowires reached 1 mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future. © 2002 American Institute of Physics.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Fabrication of nanometric single zinc and zinc oxide dots by the selective photodissociation of adsorption-phase diethylzinc using a nonresonant optical near field

T. Yatsui, T. Kawazoe, M. Ueda, Y. Yamamoto, M. Kourogi, and M. Ohtsu

Appl. Phys. Lett. 81, 3651 (2002); http://dx.doi.org/10.1063/1.1520337 (3 pages) | Cited 27 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrated a deposition of nanometer-scale Zn dots using the selective photodissociation of adsorption-phase diethylzinc with a nonresonant optical near field, where the photon energy is lower than that of the absorption edge of gas-phase diethylzinc. We achieved nanometric prenucleation by dissociating diethylzinc molecules adsorbed on a substrate. Subsequent deposition was performed by dissociating the adsorbed molecules on the prenucleated Zn. The topographic image of the deposited Zn dot had a full width at half maximum (FWHM) of 25 nm. Furthermore, the photoluminescence intensity distribution from a single ZnO dot fabricated using laser annealing had a FWHM of 85 nm. © 2002 American Institute of Physics.
Show PACS
81.07.Ta Quantum dots
81.16.Mk Laser-assisted deposition
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
82.50.Hp Processes caused by visible and UV light
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Uv Near-field scanning microscopy and spectroscopy
78.55.Et II-VI semiconductors
81.16.Pr Micro- and nano-oxidation
61.72.Cc Kinetics of defect formation and annealing

Nanoscale wire formation on sputter-eroded surfaces

J. Kim, B. Kahng, and A.-L. Barabási

Appl. Phys. Lett. 81, 3654 (2002); http://dx.doi.org/10.1063/1.1519963 (3 pages) | Cited 12 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Rotated ripple structures (RRS) on sputter-eroded surfaces are potential candidates for nanoscale wire fabrication. We show that the RRS can form when the width of the collision cascade in the longitudinal direction is larger than that in the transverse direction and the incident angle of ion beam is chosen in a specific window. By calculating the structure factor for the RRS, we find that they are more regular and their amplitude is more enhanced compared to the much studied ripple structure forming in the linear regime of sputter erosion. © 2002 American Institute of Physics.
Show PACS
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.35.B- Structure of clean surfaces (and surface reconstruction)

Fabrication of nanostructures with long-range order using block copolymer lithography

J. Y. Cheng, C. A. Ross, E. L. Thomas, Henry I. Smith, and G. J. Vancso

Appl. Phys. Lett. 81, 3657 (2002); http://dx.doi.org/10.1063/1.1519356 (3 pages) | Cited 165 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Block copolymer lithography makes use of the self-assembling properties of block copolymers to pattern nanoscale features over large areas. Although the resulting patterns have good short-range order, the lack of long-range order limits their utility in some applications. This work presents a lithographically assisted self-assembly method that allows ordered arrays of nanostructures to be formed by spin casting a block copolymer over surfaces patterned with shallow grooves. The ordered block copolymer domain patterns are then transferred into an underlying silica film using a single etching step to create a well-ordered hierarchical structure consisting of arrays of silica pillars with 20 nm feature sizes and aspect ratios greater than 3. © 2002 American Institute of Physics.
Show PACS
81.16.Nd Micro- and nanolithography
81.16.Dn Self-assembly
85.40.Hp Lithography, masks and pattern transfer

Self-aligned gated field emission devices using single carbon nanofiber cathodes

M. A. Guillorn, A. V. Melechko, V. I. Merkulov, D. K. Hensley, M. L. Simpson, and D. H. Lowndes

Appl. Phys. Lett. 81, 3660 (2002); http://dx.doi.org/10.1063/1.1517718 (3 pages) | Cited 43 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the fabrication and operation of integrated gated field emission devices using single vertically aligned carbon nanofiber (VACNF) cathodes where the gate aperture has been formed using a self-aligned technique based on chemical mechanical polishing. We find that this method for producing gated cathode devices easily achieves structures with gate apertures on the order of 2 μm that show good concentric alignment to the VACNF emitter. The operation of these devices was explored and field emission characteristics that fit well to the Fowler–Nordheim model of emission was demonstrated. © 2002 American Institute of Physics.
Show PACS
85.35.Kt Nanotube devices
85.65.+h Molecular electronic devices
79.70.+q Field emission, ionization, evaporation, and desorption
81.07.De Nanotubes

Near-field two-photon nanolithography using an apertureless optical probe

Xiaobo Yin, Nicholas Fang, Xiang Zhang, Ignacio B. Martini, and Benjamin J. Schwartz

Appl. Phys. Lett. 81, 3663 (2002); http://dx.doi.org/10.1063/1.1519329 (3 pages) | Cited 38 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Near-field two-photon optical lithography is demonstrated by using ∼120 fs laser pulses at 790 nm in an apertureless near-field optical microscope, which produces lithographic features with ∼70 nm resolution. The technique takes advantage of the field enhancement at the extremity of a metallic probe to induce nanoscale two-photon absorption and polymerization in a commercial photoresist, SU-8. Even without optimization of the resist or laser pulses, the spatial resolution of this technique is as high as λ/10, nearly a factor of 2 better than techniques based on far field two-photon lithography. © 2002 American Institute of Physics.
Show PACS
81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
07.79.Fc Near-field scanning optical microscopes
42.65.-k Nonlinear optics
back to top
RSS Feeds

AlGaN single-quantum-well light-emitting diodes with emission at 285 nm

V. Adivarahan, S. Wu, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, J. P. Zhang, M. Asif Khan, G. Tamulaitis, A Sereika, I. Yilmaz, M. S. Shur, and R. Gaska

Appl. Phys. Lett. 81, 3666 (2002); http://dx.doi.org/10.1063/1.1519100 (3 pages) | Cited 29 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on AlGaN single-quantum-well light-emitting diodes (LEDs) on sapphire with peak emission at 285 nm. A study is presented to identify the key material parameters controlling the device quantum efficiency. At room temperature, for a 200 μm×200 μm square geometry mesa type device, we obtain a power as high as 0.25 mW for 650 mA pulsed pumping. The LEDs show significantly higher output powers at temperatures below 100 K. © 2002 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
Page 2 of 3 Pages Previous Page Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close