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DEVICE PHYSICS

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Prevention of electric breakdown during ion bombardment of organic insulators using a cluster ion beam

K. Hirata, Y. Saitoh, K. Narumi, and Y. Kobayashi

Appl. Phys. Lett. 81, 3669 (2002); http://dx.doi.org/10.1063/1.1520336 (3 pages) | Cited 6 times

Online Publication Date: 28 October 2002

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The charge accumulation processes of an organic insulator during monoatomic ion C1+ and cluster ion C8+ bombardments were studied by simultaneously measuring the target and secondary emission currents as functions of atomic dose. A series of abrupt changes in the currents was observed during C1+ bombardment, indicating repeated charge accumulation and electric breakdown. For C8+ bombardment, the emitting current was equilibrated with the injecting current at a dose of about 10¹³ atoms/cm². The charge equilibrium prevented subsequent charge accumulation on the target and electric breakdown. By combining the cluster bombardment with the application of a suitable external electric field upon the target, the charge accumulation problem was completely eliminated. © 2002 American Institute of Physics.

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61.80.Jh	Ion radiation effects
61.82.Pv	Polymers, organic compounds
77.22.Jp	Dielectric breakdown and space-charge effects
79.20.Rf	Atomic, molecular, and ion beam impact and interactions with surfaces
61.41.+e	Polymers, elastomers, and plastics
73.61.Ng	Insulators
77.84.Jd	Polymers; organic compounds

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Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors

G. Fiori and G. Iannaccone

Appl. Phys. Lett. 81, 3672 (2002); http://dx.doi.org/10.1063/1.1519349 (3 pages) | Cited 12 times

Online Publication Date: 28 October 2002

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We present a code for the quantum simulation of ballistic metal-oxide-semiconductor field effect transistors (MOSFETs) in two dimensions, which has been applied to the simulation of a so-called “well-tempered” MOSFET with channel length of 25 nm. Electron confinement at the Si/SiO₂ interface and effective mass anisotropy are properly taken into account. In the assumption of negligible phonon scattering in nanoscale devices, transport is assumed to be purely ballistic. We show that our code can provide the relevant direct-current characteristics of the device by running on a simple high-end personal computer, and can be a useful tool for the extraction of physics-based compact models of nanoscale MOSFETs. © 2002 American Institute of Physics.

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85.30.Tv	Field effect devices
85.30.De	Semiconductor-device characterization, design, and modeling

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Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm

Yajun Wei, Aaron Gin, Manijeh Razeghi, and Gail J. Brown

Appl. Phys. Lett. 81, 3675 (2002); http://dx.doi.org/10.1063/1.1520699 (3 pages) | Cited 54 times

Online Publication Date: 28 October 2002

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We report the most recent advance in the area of type II InAs/GaSb superlattice photovoltaic detectors that have cutoff wavelengths beyond 25 μm, with some at nearly 32 μm. The photodiodes with a heterosuperlattice junction showed Johnson noise limited peak detectivity of 1.05×10¹⁰ cm Hz^1/2/W at 15 μm under zero bias, and peak responsivity of 3 A/W under −40 mV reverse bias at 34 K illuminated by ∼300 K background with a 2π field-of-view. The maximum operating temperature of these detectors ranges from 50 to 65 K. No detectable change in the blackbody response has been observed after 5–6 thermal cyclings, with temperature varying between 15 and 296 K in vacuum. © 2002 American Institute of Physics.

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85.60.Gz	Photodetectors (including infrared and CCD detectors)
85.60.Dw	Photodiodes; phototransistors; photoresistors

INTERDISCIPLINARY AND GENERAL PHYSICS

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Transient photoinduced diffractive solid immersion lens for infrared microscopy

K. Cohn, D. Simanovskii, T. Smith, and D. Palanker

Appl. Phys. Lett. 81, 3678 (2002); http://dx.doi.org/10.1063/1.1519729 (3 pages) | Cited 1 time

Online Publication Date: 28 October 2002

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We present a scanning near-field infrared microscopy technique using transient solid immersion lenses as near-field probes. The transient SILs were formed by photoinducing a zone plate structure on the surfaces of semiconductor wafers with high indices of refraction. Lenses with different number of zones have been tested using gallium phosphide and silicon wafers and their focusing properties were determined. We demonstrate that transient SILs can have lifetimes longer than 50 ps and provide the same high numerical apertures as conventional SILs. The use of transient SILs eliminates the need for mechanical scanning of the lens or sample, thus providing much faster scanning and the possibility to work with soft and liquid objects. © 2002 American Institute of Physics.

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07.79.Fc	Near-field scanning optical microscopes
42.79.Bh	Lenses, prisms and mirrors
42.79.Ci	Filters, zone plates, and polarizers

COMMENTS

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Comment on “Reliable extraction of the energy distribution of Si/SiO₂ interface traps in ultrathin metal–oxide–semiconductor structures” [Appl. Phys. Lett. 80, 3952 (2002)]

Per Lundgren, Einar Ö. Sveinbjörnsson, and Halldor Ö. Olafsson

Appl. Phys. Lett. 81, 3681 (2002); http://dx.doi.org/10.1063/1.1519330 (2 pages) | Cited 1 time

Online Publication Date: 28 October 2002

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Abstract Unavailable

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73.40.Qv	Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r	Electron states at surfaces and interfaces
72.20.Jv	Charge carriers: generation, recombination, lifetime, and trapping

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Response to “Comment on ‘Reliable extraction of the energy distribution of Si/SiO₂ interface traps in ultrathin metal–oxide–semiconductor structures’ ” [Appl. Phys. Lett. 81, 3681 (2002)]

Quazi Deen Mohd Khosru, Anri Nakajima, Takashi Yoshimoto, and Shin Yokoyama

Appl. Phys. Lett. 81, 3683 (2002); http://dx.doi.org/10.1063/1.1519331 (2 pages) | Cited 1 time

Online Publication Date: 28 October 2002

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Abstract Unavailable

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73.40.Qv	Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r	Electron states at surfaces and interfaces
72.20.Jv	Charge carriers: generation, recombination, lifetime, and trapping

ERRATA

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Erratum/Apology: “Electron beam-induced carbon masking for electrodeposition on semiconductor surfaces” [Appl. Phys. Lett. 78, 2940 (2001)]

T. Djenizian, L. Santinacci, and P. Schmuki

Appl. Phys. Lett. 81, 3685 (2002); http://dx.doi.org/10.1063/1.1521253 (1 page)

Online Publication Date: 28 October 2002

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Abstract Unavailable

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81.15.Pq	Electrodeposition, electroplating
81.05.U-	Carbon/carbon-based materials
82.45.Qr	Electrodeposition and electrodissolution
85.40.Sz	Deposition technology
81.15.-z	Methods of deposition of films and coatings; film growth and epitaxy
85.40.Hp	Lithography, masks and pattern transfer
99.10.Cd	Errata

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“Nanoscale patterning of Si(110) surfaces by scratching through the native oxide layer using atomic force microscope” [Appl. Phys. Lett. 79, 1882 (2001)]

L. Santinacci, T. Djenizian, and P. Schmuki

Appl. Phys. Lett. 81, 3685 (2002); http://dx.doi.org/10.1063/1.1528350 (1 page)

Online Publication Date: 28 October 2002

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Abstract Unavailable

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81.15.Pq	Electrodeposition, electroplating
81.05.U-	Carbon/carbon-based materials
82.45.Qr	Electrodeposition and electrodissolution
85.40.Sz	Deposition technology
81.15.-z	Methods of deposition of films and coatings; film growth and epitaxy
85.40.Hp	Lithography, masks and pattern transfer
99.10.Cd	Errata

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BROWSE VOLUMES

4 Nov 2002

Volume 81, Issue 19, pp. 3519-3685

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