APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Nov 2002

Volume 81, Issue 19, pp. 3519-3685

Return to All Sections
back to top
RSS Feeds

AlGaN single-quantum-well light-emitting diodes with emission at 285 nm

V. Adivarahan, S. Wu, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, J. P. Zhang, M. Asif Khan, G. Tamulaitis, A Sereika, I. Yilmaz, M. S. Shur, and R. Gaska

Appl. Phys. Lett. 81, 3666 (2002); http://dx.doi.org/10.1063/1.1519100 (3 pages) | Cited 29 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on AlGaN single-quantum-well light-emitting diodes (LEDs) on sapphire with peak emission at 285 nm. A study is presented to identify the key material parameters controlling the device quantum efficiency. At room temperature, for a 200 μm×200 μm square geometry mesa type device, we obtain a power as high as 0.25 mW for 650 mA pulsed pumping. The LEDs show significantly higher output powers at temperatures below 100 K. © 2002 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Prevention of electric breakdown during ion bombardment of organic insulators using a cluster ion beam

K. Hirata, Y. Saitoh, K. Narumi, and Y. Kobayashi

Appl. Phys. Lett. 81, 3669 (2002); http://dx.doi.org/10.1063/1.1520336 (3 pages) | Cited 6 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The charge accumulation processes of an organic insulator during monoatomic ion C1+ and cluster ion C8+ bombardments were studied by simultaneously measuring the target and secondary emission currents as functions of atomic dose. A series of abrupt changes in the currents was observed during C1+ bombardment, indicating repeated charge accumulation and electric breakdown. For C8+ bombardment, the emitting current was equilibrated with the injecting current at a dose of about 1013 atoms/cm2. The charge equilibrium prevented subsequent charge accumulation on the target and electric breakdown. By combining the cluster bombardment with the application of a suitable external electric field upon the target, the charge accumulation problem was completely eliminated. © 2002 American Institute of Physics.
Show PACS
61.80.Jh Ion radiation effects
61.82.Pv Polymers, organic compounds
77.22.Jp Dielectric breakdown and space-charge effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.41.+e Polymers, elastomers, and plastics
73.61.Ng Insulators
77.84.Jd Polymers; organic compounds

Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors

G. Fiori and G. Iannaccone

Appl. Phys. Lett. 81, 3672 (2002); http://dx.doi.org/10.1063/1.1519349 (3 pages) | Cited 12 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a code for the quantum simulation of ballistic metal-oxide-semiconductor field effect transistors (MOSFETs) in two dimensions, which has been applied to the simulation of a so-called “well-tempered” MOSFET with channel length of 25 nm. Electron confinement at the Si/SiO2 interface and effective mass anisotropy are properly taken into account. In the assumption of negligible phonon scattering in nanoscale devices, transport is assumed to be purely ballistic. We show that our code can provide the relevant direct-current characteristics of the device by running on a simple high-end personal computer, and can be a useful tool for the extraction of physics-based compact models of nanoscale MOSFETs. © 2002 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm

Yajun Wei, Aaron Gin, Manijeh Razeghi, and Gail J. Brown

Appl. Phys. Lett. 81, 3675 (2002); http://dx.doi.org/10.1063/1.1520699 (3 pages) | Cited 54 times

Online Publication Date: 28 October 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the most recent advance in the area of type II InAs/GaSb superlattice photovoltaic detectors that have cutoff wavelengths beyond 25 μm, with some at nearly 32 μm. The photodiodes with a heterosuperlattice junction showed Johnson noise limited peak detectivity of 1.05×1010 cm Hz1/2/W at 15 μm under zero bias, and peak responsivity of 3 A/W under −40 mV reverse bias at 34 K illuminated by ∼300 K background with a 2π field-of-view. The maximum operating temperature of these detectors ranges from 50 to 65 K. No detectable change in the blackbody response has been observed after 5–6 thermal cyclings, with temperature varying between 15 and 296 K in vacuum. © 2002 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close