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4 Nov 2002

Volume 81, Issue 19, pp. 3519-3685

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Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy

M. Porti, M. Nafría, M. C. Blüm, X. Aymerich, and S. Sadewasser

Appl. Phys. Lett. 81, 3615 (2002); http://dx.doi.org/10.1063/1.1519357 (3 pages) | Cited 14 times

Online Publication Date: 28 October 2002

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Atomic-force-microscopy-based techniques have been used to investigate at a nanometer scale the dielectric breakdown (BD) of ultrathin (<6 nm) SiO2 films of metal-oxide-semiconductor devices. The results show that BD leads to negative charge at the BD location and the amount of created charge has been estimated. Moreover, the comparison of the charge magnitude generated during current-limited stresses and stresses without current limit demonstrates that the observed BD induced negative charge is related to the structural damage created by the oxide BD. © 2002 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
85.30.Tv Field effect devices

Thermal stability of (HfO2)x(Al2O3)1−x on Si

H. Y. Yu, N. Wu, M. F. Li, Chunxiang Zhu, B. J. Cho, D.-L. Kwong, C. H. Tung, J. S. Pan, J. W. Chai, W. D. Wang, D. Z. Chi, C. H. Ang, J. Z. Zheng, and S. Ramanathan

Appl. Phys. Lett. 81, 3618 (2002); http://dx.doi.org/10.1063/1.1519733 (3 pages) | Cited 41 times

Online Publication Date: 28 October 2002

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The kinetics of the interfacial layer (IL) growth between Hf aluminates and the Si substrate during high-temperature rapid thermal annealing (RTA) in either N2 ( ∼ 10 Torr) or high vacuum ( ∼ 2×10−5 Torr) is studied by high-resolution x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy. The significant difference of the IL growth observed between high vacuum and relatively oxygen-rich N2 annealing (both at 1000 °C) is shown to be caused by the oxygen species from the annealing ambient. Our results also show that Hf aluminates exhibit much stronger resistance to oxygen diffusion than pure HfO2 during RTA in N2 ambient, and the resistance becomes stronger with more Al incorporated into HfO2. This observation is explained by the combined effects of (i) smaller oxygen diffusion coefficient of Al2O3 than HfO2, and (ii) higher crystallization temperature of the Hf aluminates. © 2002 American Institute of Physics.
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68.60.Dv Thermal stability; thermal effects
68.55.A- Nucleation and growth
61.72.Cc Kinetics of defect formation and annealing
66.30.H- Self-diffusion and ionic conduction in nonmetals
68.37.Lp Transmission electron microscopy (TEM)
79.60.Jv Interfaces; heterostructures; nanostructures

Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Zhai Jiwei, M. H. Cheung, Zheng Kui Xu, Xin Li, Haydn Chen, Eugene V. Colla, and T. B. Wu

Appl. Phys. Lett. 81, 3621 (2002); http://dx.doi.org/10.1063/1.1519944 (3 pages) | Cited 17 times

Online Publication Date: 28 October 2002

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Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500–700 °C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 μC/cm2, which is equal to that observed in bulk samples. © 2002 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Ferroelectric BaPbO3/PbZr0.53Ti0.47/BaPbO3 heterostructures

Chun-Sheng Liang, Jenn-Ming Wu, and Ming-Chu Chang

Appl. Phys. Lett. 81, 3624 (2002); http://dx.doi.org/10.1063/1.1520332 (3 pages) | Cited 28 times

Online Publication Date: 28 October 2002

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BaPbO3 (BPO)/PbZr0.53Ti0.47 (PZT)/BPO heterostructures were fabricated by combining the sol-gel and rf-magnetron sputtering techniques. Experimental results indicate that the BPO bottom electrodes effectively prevent the formation of the rosette structure of PZT, producing smooth surfaces. Additionally, ferroelectric, fatigue, and leakage current properties were markedly improved when both the top and the bottom electrodes were changed from Pt to BPO. These improvements are due to a superior electrode/ferroelectric interface. BPO is better than Pt and other oxide electrodes for use in PZT ferroelectric capacitors due to its remarkably improved properties and quite low growth temperature. © 2002 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.15.Cd Deposition by sputtering
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films

HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

O. Renault, D. Samour, J.-F. Damlencourt, D. Blin, F. Martin, S. Marthon, N. T. Barrett, and P. Besson

Appl. Phys. Lett. 81, 3627 (2002); http://dx.doi.org/10.1063/1.1520334 (3 pages) | Cited 95 times

Online Publication Date: 28 October 2002

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X-ray photoelectron spectroscopy using synchrotron radiation has been used to investigate the HfO2/SiO2 interface chemistry of high-quality 0.6 and 2.5 nm HfO2/0.6 nm SiO2/Si structures. The high energy resolution (0.15 eV) along with the high brightness level allows us to separate, unambiguously, on both Hf 4f and Si 2p core-level spectra, interfacial Hf–silicate bonds from bulk HfO2 and SiO2 contributions, thus making possible subsequent quantitative treatments and modeling of the interfacial layer structure. Careful assessment of the energy shift of the interfacial components shows that Si-rich Hf silicates are present. The underlying assumption that initial-state contribution dominates the observed Si 2p shift is briefly discussed. © 2002 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.35.Ct Interface structure and roughness
79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
73.20.-r Electron states at surfaces and interfaces

Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate

Moonju Cho, Jaehoo Park, Hong Bae Park, Cheol Seong Hwang, Jaehack Jeong, Kwang Soo Hyun, Young-Wug Kim, Chang-Bong Oh, and Hee-Sung Kang

Appl. Phys. Lett. 81, 3630 (2002); http://dx.doi.org/10.1063/1.1520333 (3 pages) | Cited 20 times

Online Publication Date: 28 October 2002

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HfO2 thin films were deposited on SiNx-passivated Si wafers at 300 and 400 °C using an atomic-layer-deposition technique. The SiNx films were deposited by another atomic-layer-deposition process at 595 °C. The SiNx films worked well as barriers to both Si and O diffusion, resulting in a small decrease in the capacitance density even after post-annealing at temperatures up to 1000 °C, compared either to the HfO2 film deposited directly on Si or an Al2O3-barrier-layer/Si substrate. The decrease in the capacitance density after post-annealing, although relatively small, was due to Hf and O diffusion into the interface layer. Interestingly, post-annealing under an atmosphere containing small amount of oxygen (∼1%) decreased the capacitance density to a smaller degree. However, the interface and bulk capturing of the carrier was serious, resulting in a rather large hysteresis (∼100 mV) voltage in the capacitance–voltage measurements even after post-annealing. © 2002 American Institute of Physics.
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68.60.Dv Thermal stability; thermal effects
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Fx Diffusion; interface formation
77.22.Ch Permittivity (dielectric function)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Observation of domain texture in poled Pb(Mg1/3Nb2/3)O3–PbTiO3 crystals

J. F. Li, B. Ruette, and D. Viehland

Appl. Phys. Lett. 81, 3633 (2002); http://dx.doi.org/10.1063/1.1519352 (3 pages) | Cited 2 times

Online Publication Date: 28 October 2002

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Mapping of domain distributions under constant Bragg conditions has been performed on poled (0.7)Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 crystals. Studies were done on crystals of cubic geometry, where each cube face was oriented along a 〈001〉c. Multiple domains with monoclinic limiting symmetry (angle ∼173°–176°) were observed on all three (001)c faces. Perpendicular to the poling direction, domain modulations were observed by a splitting of each variant. © 2002 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
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