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4 Nov 2002

Volume 81, Issue 19, pp. 3519-3685

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Lateral diffusion of titanium disilicide as a route to contacting hybrid Si/organic nanostructures

V. Palermo, M. Buchanan, A. Bezinger, and R. A. Wolkow

Appl. Phys. Lett. 81, 3636 (2002); http://dx.doi.org/10.1063/1.1519959 (3 pages) | Cited 2 times

Online Publication Date: 28 October 2002

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We characterized microscopic patterns of TiSi2 using atomic force microscopy and scanning tunneling microscopy, to test the possibility of using silicide contacts for experiments on the nanoscopic scale. We observed the effect on the morphology of incomplete formation of the disilicide, and studied the growth of lateral extension due to atomic diffusion. Upon diffusion, the silicide forms a neat and clean interface some hundreds of nanometers from the bulk electrode. That spreading phenomenon is our central focus, as we believe it may be useful in future efforts to make narrowly spaced contacts. © 2002 American Institute of Physics.
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81.07.Lk Nanocontacts
73.63.Rt Nanoscale contacts
68.35.Fx Diffusion; interface formation
81.07.Pr Organic-inorganic hybrid nanostructures
68.35.Ct Interface structure and roughness
68.37.Ps Atomic force microscopy (AFM)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

L. W. Teo, W. K. Choi, W. K. Chim, V. Ho, C. M. Moey, M. S. Tay, C. L. Heng, Y. Lei, D. A. Antoniadis, and E. A. Fitzgerald

Appl. Phys. Lett. 81, 3639 (2002); http://dx.doi.org/10.1063/1.1519355 (3 pages) | Cited 32 times

Online Publication Date: 28 October 2002

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The size of germanium (Ge) nanocrystals in a trilayer metal-insulator-semiconductor memory device was controlled by varying the thickness of the middle (co-sputtered Ge+SiO2) layer. From analyses using transmission electron microscopy and capacitance–voltage measurements, we deduced that both electrons and holes are most likely stored within the nanocrystals in the middle layer of the trilayer structure rather than at the interfaces of the nanocrystals with the oxide matrix. © 2002 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Exciton formation dynamics in crescent-shaped Quantum Wires

T. Yasuhira, K. Komori, R. Akimoto, X. L. Wang, M. Watanabe, and M. Ogura

Appl. Phys. Lett. 81, 3642 (2002); http://dx.doi.org/10.1063/1.1517721 (3 pages) | Cited 2 times

Online Publication Date: 28 October 2002

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We have investigated the ultrafast carrier dynamics in optically high-quality V-grooved GaAs/AlGaAs quantum wires using a highly sensitive nonlinear spectroscopy technique. It is found that, with resonant excitation, there is a blueshift due to exciton–exciton interaction within 0.3 ps followed by a redshift due to exciton relaxation. With nonresonant excitation, the redshift occurs due to the phonon emission during exciton formation. As a result, the exciton formation time and the exciton lifetime in the quantum wires are found to be 5 and 110 ps, respectively. © 2002 American Institute of Physics.
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73.21.Hb Quantum wires
71.35.-y Excitons and related phenomena
78.66.Fd III-V semiconductors
73.63.Nm Quantum wires
78.47.-p Spectroscopy of solid state dynamics

Room-temperature single-electron tunneling in conducting polypyrrole nanotube

S. K. Saha

Appl. Phys. Lett. 81, 3645 (2002); http://dx.doi.org/10.1063/1.1519104 (3 pages) | Cited 21 times

Online Publication Date: 28 October 2002

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Observation of room-temperature single-electron tunneling (SET) in a conjugated polymer is reported. It is observed that conjugated polymers in the high doping level are composed of some ordered (metallic) and disordered (semiconducting) regions. This property has been exploited in conducting polypyrrole nanotubes to form some ordered regions separated by disordered regions. The nonlinear current–voltage and positive temperature coefficient of resistance in the high-temperature limit confirm the desired morphology of the tubes. Isolated metallic islands, which are necessary to observe SET have been formed disrupting the nanotube in the semiconducting (disordered) portions by applying a voltage pulse. © 2002 American Institute of Physics.
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73.63.Fg Nanotubes
61.46.-w Structure of nanoscale materials

Field emission from well-aligned zinc oxide nanowires grown at low temperature

C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, and H. J. Lee

Appl. Phys. Lett. 81, 3648 (2002); http://dx.doi.org/10.1063/1.1518810 (3 pages) | Cited 464 times

Online Publication Date: 28 October 2002

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Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550 °C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1 μA/cm2. The emission current density from the ZnO nanowires reached 1 mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future. © 2002 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Fabrication of nanometric single zinc and zinc oxide dots by the selective photodissociation of adsorption-phase diethylzinc using a nonresonant optical near field

T. Yatsui, T. Kawazoe, M. Ueda, Y. Yamamoto, M. Kourogi, and M. Ohtsu

Appl. Phys. Lett. 81, 3651 (2002); http://dx.doi.org/10.1063/1.1520337 (3 pages) | Cited 27 times

Online Publication Date: 28 October 2002

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We demonstrated a deposition of nanometer-scale Zn dots using the selective photodissociation of adsorption-phase diethylzinc with a nonresonant optical near field, where the photon energy is lower than that of the absorption edge of gas-phase diethylzinc. We achieved nanometric prenucleation by dissociating diethylzinc molecules adsorbed on a substrate. Subsequent deposition was performed by dissociating the adsorbed molecules on the prenucleated Zn. The topographic image of the deposited Zn dot had a full width at half maximum (FWHM) of 25 nm. Furthermore, the photoluminescence intensity distribution from a single ZnO dot fabricated using laser annealing had a FWHM of 85 nm. © 2002 American Institute of Physics.
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81.07.Ta Quantum dots
81.16.Mk Laser-assisted deposition
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
82.50.Hp Processes caused by visible and UV light
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Uv Near-field scanning microscopy and spectroscopy
78.55.Et II-VI semiconductors
81.16.Pr Micro- and nano-oxidation
61.72.Cc Kinetics of defect formation and annealing

Nanoscale wire formation on sputter-eroded surfaces

J. Kim, B. Kahng, and A.-L. Barabási

Appl. Phys. Lett. 81, 3654 (2002); http://dx.doi.org/10.1063/1.1519963 (3 pages) | Cited 12 times

Online Publication Date: 28 October 2002

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Rotated ripple structures (RRS) on sputter-eroded surfaces are potential candidates for nanoscale wire fabrication. We show that the RRS can form when the width of the collision cascade in the longitudinal direction is larger than that in the transverse direction and the incident angle of ion beam is chosen in a specific window. By calculating the structure factor for the RRS, we find that they are more regular and their amplitude is more enhanced compared to the much studied ripple structure forming in the linear regime of sputter erosion. © 2002 American Institute of Physics.
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68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.35.B- Structure of clean surfaces (and surface reconstruction)

Fabrication of nanostructures with long-range order using block copolymer lithography

J. Y. Cheng, C. A. Ross, E. L. Thomas, Henry I. Smith, and G. J. Vancso

Appl. Phys. Lett. 81, 3657 (2002); http://dx.doi.org/10.1063/1.1519356 (3 pages) | Cited 165 times

Online Publication Date: 28 October 2002

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Block copolymer lithography makes use of the self-assembling properties of block copolymers to pattern nanoscale features over large areas. Although the resulting patterns have good short-range order, the lack of long-range order limits their utility in some applications. This work presents a lithographically assisted self-assembly method that allows ordered arrays of nanostructures to be formed by spin casting a block copolymer over surfaces patterned with shallow grooves. The ordered block copolymer domain patterns are then transferred into an underlying silica film using a single etching step to create a well-ordered hierarchical structure consisting of arrays of silica pillars with 20 nm feature sizes and aspect ratios greater than 3. © 2002 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
81.16.Dn Self-assembly
85.40.Hp Lithography, masks and pattern transfer

Self-aligned gated field emission devices using single carbon nanofiber cathodes

M. A. Guillorn, A. V. Melechko, V. I. Merkulov, D. K. Hensley, M. L. Simpson, and D. H. Lowndes

Appl. Phys. Lett. 81, 3660 (2002); http://dx.doi.org/10.1063/1.1517718 (3 pages) | Cited 43 times

Online Publication Date: 28 October 2002

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We report on the fabrication and operation of integrated gated field emission devices using single vertically aligned carbon nanofiber (VACNF) cathodes where the gate aperture has been formed using a self-aligned technique based on chemical mechanical polishing. We find that this method for producing gated cathode devices easily achieves structures with gate apertures on the order of 2 μm that show good concentric alignment to the VACNF emitter. The operation of these devices was explored and field emission characteristics that fit well to the Fowler–Nordheim model of emission was demonstrated. © 2002 American Institute of Physics.
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85.35.Kt Nanotube devices
85.65.+h Molecular electronic devices
79.70.+q Field emission, ionization, evaporation, and desorption
81.07.De Nanotubes

Near-field two-photon nanolithography using an apertureless optical probe

Xiaobo Yin, Nicholas Fang, Xiang Zhang, Ignacio B. Martini, and Benjamin J. Schwartz

Appl. Phys. Lett. 81, 3663 (2002); http://dx.doi.org/10.1063/1.1519329 (3 pages) | Cited 38 times

Online Publication Date: 28 October 2002

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Near-field two-photon optical lithography is demonstrated by using ∼120 fs laser pulses at 790 nm in an apertureless near-field optical microscope, which produces lithographic features with ∼70 nm resolution. The technique takes advantage of the field enhancement at the extremity of a metallic probe to induce nanoscale two-photon absorption and polymerization in a commercial photoresist, SU-8. Even without optimization of the resist or laser pulses, the spatial resolution of this technique is as high as λ/10, nearly a factor of 2 better than techniques based on far field two-photon lithography. © 2002 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
07.79.Fc Near-field scanning optical microscopes
42.65.-k Nonlinear optics
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