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1 Jul 2002

Volume 81, Issue 1, pp. 1-184

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Study on capacitance-voltage properties of Bi2Ti2O7/n-Si (100) films

Shao-Wei Wang, Wei Lu, Xiao-Shuang Chen, Ning Dai, Xue-Chu Shen, Hong Wang, and Min Wang

Appl. Phys. Lett. 81, 111 (2002); http://dx.doi.org/10.1063/1.1490628 (3 pages) | Cited 10 times

Online Publication Date: 25 June 2002

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The capacitance-voltage (C–V) behavior of the metal/Bi2Ti2O7/n-Si metal–oxide–semiconductor (MOS) structure has been studied. The analyses of C–V curves show that a high builtin voltage of 11 V on Si can be achieved by bias-temperature (BT) process. The hysteresis loops in C–V curves of the MOS structure were also observed clearly. From the dependence of C–V properties on different BT processes, it is deduced that the hysteresis loops are dominated by the mobile negative charges in the oxide. © 2002 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Dielectric response and structural properties of TiO2-doped Ba0.6Sr0.4TiO3 films

Q. X. Jia, B. H. Park, B. J. Gibbons, J. Y. Huang, and P. Lu

Appl. Phys. Lett. 81, 114 (2002); http://dx.doi.org/10.1063/1.1491287 (3 pages) | Cited 16 times

Online Publication Date: 25 June 2002

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Dielectric Ba0.6Sr0.4TiO3 films doped with different weight percentages of TiO2 were deposited by pulsed-laser deposition. The dielectric constant, dielectric loss, and the dielectric tunability of the films were found to be a strong function of the weight ratio of TiO2/Ba0.6Sr0.4TiO3. Compared to the pure Ba0.6Sr0.4TiO3, the TiO2-doped Ba0.6Sr0.4TiO3 exhibits lower dielectric loss while maintaining a significantly adjustable dielectric constant and desirable capacitance tunability. The change of the dielectric properties of TiO2-doped Ba0.6Sr0.4TiO3 films is closely related to the change in microstructure of the films as revealed by transmission electron microscopy. © 2002 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
61.72.-y Defects and impurities in crystals; microstructure
68.37.Lp Transmission electron microscopy (TEM)

Local hysteresis and grain size effect in Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films

V. V. Shvartsman, A. Yu. Emelyanov, A. L. Kholkin, and A. Safari

Appl. Phys. Lett. 81, 117 (2002); http://dx.doi.org/10.1063/1.1490150 (3 pages) | Cited 26 times

Online Publication Date: 25 June 2002

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The local piezoelectric properties of relaxor ferroelectric films of solid solutions 0.9Pb(Mg1/3Nb2/3)O3–0.1PbTiO3 were investigated by scanning force microscopy (SFM) in a piezoelectric contact mode. The piezoelectric hysteresis loops were acquired in the interior of grains of different sizes. A clear correlation between the values of the effective piezoelectric coefficients, deff, and the size of the respective grains is observed. Small grains exhibit slim piezoelectric hysteresis loops with low remanent deff, whereas relatively strong piezoelectric activity is characteristic of larger grains. Part of the grains (∼20–25%) is strongly polarized without application of a dc field. The nature of both phenomena is discussed in terms of the internal bias field and grain size effects on the dynamics of nanopolar clusters. © 2002 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films

Transmission properties of composite metamaterials in free space

Mehmet Bayindir, K. Aydin, E. Ozbay, P. Markoš, and C. M. Soukoulis

Appl. Phys. Lett. 81, 120 (2002); http://dx.doi.org/10.1063/1.1492009 (3 pages) | Cited 115 times

Online Publication Date: 25 June 2002

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We propose and demonstrate a type of composite metamaterial which is constructed by combining thin copper wires and split ring resonators (SRRs) on the same board. The transmission measurements performed in free space exhibit a passband within the stop bands of SRRs and thin wire structures. The experimental results are in good agreement with the predictions of the transfer matrix method simulations. © 2002 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.30.Vn Filters
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