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1 Jul 2002

Volume 81, Issue 1, pp. 1-184

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Three-dimensional carrier profiling of InP-based devices using scanning spreading resistance microscopy

M. W. Xu, T. Hantschel, and W. Vandervorst

Appl. Phys. Lett. 81, 177 (2002); http://dx.doi.org/10.1063/1.1490399 (3 pages) | Cited 8 times

Online Publication Date: 25 June 2002

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Scanning spreading resistance microscopy (SSRM) is a carrier profiling method based on atomic force microscopy (AFM), which has proven its power for two-dimensional semiconductor device analysis in the last few years. A three-dimensional approach is presented for depth profiling on the nm scale and for device inspection from the top surface. A procedure for SSRM on the InP structure is developed, where layers a few nm thick are continuously scratched away while scanning the region of interest with a highly doped diamond tip. This extends the SSRM to the third dimension, as SSRM images taken at different depths can be combined to construct a three-dimensional image of the sample. Based on the same technology, a “depth profiling” mode is developed whereby a well-defined etched pit is made. SSRM measurements taken on the side made of the etched pit provide a carrier profile to overcome the limitations of standard cross-sectional profiling and enable profiling of the layer with nm resolution. © 2002 American Institute of Physics.
Show PACS
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.05.Ea III-V semiconductors
06.60.Mr Testing and inspecting procedures
85.30.-z Semiconductor devices
68.37.Ps Atomic force microscopy (AFM)
81.65.Cf Surface cleaning, etching, patterning

In situ resistivity measurements during the atomic layer deposition of ZnO and W thin films

M. Schuisky, J. W. Elam, and S. M. George

Appl. Phys. Lett. 81, 180 (2002); http://dx.doi.org/10.1063/1.1490413 (3 pages) | Cited 19 times

Online Publication Date: 25 June 2002

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In situ monitoring of the electrical resistivity of ZnO and W thin films during atomic layer deposition (ALD) was performed using a four-point probe. Large oscillations were observed during the ZnO ALD resistivity measurements. The resistivity dramatically increased during each diethyl zinc exposure and decreased during each H2O exposure. In contrast, the W ALD resistivity measurements exhibited a steplike pattern where the resistivity decreased during the Si2H6 exposures and remained constant during the WF6 exposures. In situ resistivity measurements will be useful to monitor ALD processing and also may help to optimize and understand the properties of gas sensors. © 2002 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
81.05.Bx Metals, semimetals, and alloys
81.05.Dz II-VI semiconductors
73.61.At Metal and metallic alloys
73.61.Ga II-VI semiconductors
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