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1 Jul 2002

Volume 81, Issue 1, pp. 1-184

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Metal-dependent conductance quantization of nanocontacts in solution

Jingze Li, Taisuke Kanzaki, Kei Murakoshi, and Yoshihiro Nakato

Appl. Phys. Lett. 81, 123 (2002); http://dx.doi.org/10.1063/1.1491015 (3 pages) | Cited 31 times

Online Publication Date: 25 June 2002

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Metal nanocontacts of Cu, Ag, Ni, Pd, and Pb were fabricated via the electrochemical etching or deposition method at a gap of sustainable thin Au wires in solution. Relatively stable behaviors of the conductance quantization exhibiting a unit value were apparent at the contacts of Cu, Ag, Ni, and Pd at room temperature. Conductance quantization behavior of the Pb contact was rather unstable in comparison with other metals. © 2002 American Institute of Physics.
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73.63.Rt Nanoscale contacts
73.40.Jn Metal-to-metal contacts

Single-crystalline gallium nitride nanobelts

Seung Yong Bae, Hee Won Seo, Jeunghee Park, Hyunik Yang, Ju Chul Park, and Soun Young Lee

Appl. Phys. Lett. 81, 126 (2002); http://dx.doi.org/10.1063/1.1490395 (3 pages) | Cited 43 times

Online Publication Date: 25 June 2002

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Single-crystalline wurtzite gallium nitride nanobelts were synthesized by thermal reaction of gallium, gallium nitride, and ammonia using iron and boron oxide as catalysts. The structure of nanobelts was investigated by high-resolution transmission electron microscopy with electron energy-loss spectroscopy. They have a distinctive triangle tip and thick side edges. The widths are 200–300 nm, the thickness of belt plane is about 1/10 of the width, and the lengths are up to a few tens μm. The growth direction is uniformly perpendicular to the [010] direction. © 2002 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
68.37.Lp Transmission electron microscopy (TEM)
79.20.Uv Electron energy loss spectroscopy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

The persistence of eigenstates in open quantum dots

R. Akis, J. P. Bird, and D. K. Ferry

Appl. Phys. Lett. 81, 129 (2002); http://dx.doi.org/10.1063/1.1490404 (3 pages) | Cited 29 times

Online Publication Date: 25 June 2002

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We show that transport in open quantum dots can be mediated by single eigenstates, even when the dot leads support several propagating modes. The broadening of these few robust states, whose wave functions are generally localized within the interior of the dot, is found to be virtually independent of the lead width. Our results therefore indicate that a proper discussion of the specific nature of the individual eigenstates of the closed system is critical to determining their influence on transport through open dots. © 2002 American Institute of Physics.
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73.21.La Quantum dots
73.63.Kv Quantum dots

Decomposition of trisdimethylaminoarsenic and As nucleation on GaAs(001)-2×4 at low temperature

Hiromi Kuramochi, Jie Cui, Masashi Ozeki, Hironaga Uchida, Hiroyuki Akinaga, Hiroaki Yoshida, Noriaki Sanada, and Yasuo Fukuda

Appl. Phys. Lett. 81, 132 (2002); http://dx.doi.org/10.1063/1.1489504 (3 pages) | Cited 1 time

Online Publication Date: 25 June 2002

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Adsorption and decomposition of trisdimethylaminoarsenic (TDMAAs) on a GaAs(001)-2×4 surface have been studied in the temperature range from 100 to 500 K by high-resolution electron energy loss spectroscopy (HREELS) and scanning tunneling microscopy (STM). TDMAAs is adsorbed molecularly on the surface at 100 K. Decomposition starts at about 300 K and vibration peaks of HREELS spectra due to adsorbates almost disappear between 400 and 500 K. STM images indicate that TDMAAs is adsorbed on As dimers of the GaAs(001)-2×4 surface. Only As atoms and clusters remain at the edge of the As dimer rows and nucleation of As starts at about 470 K. Decomposition of TDMAAs and As nucleation at relatively low temperature are advantageous as a source molecule in metalorganic chemical vapor deposition for nanofabrication. © 2002 American Institute of Physics.
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68.43.Fg Adsorbate structure (binding sites, geometry)
81.16.Be Chemical synthesis methods
81.07.Ta Quantum dots
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
79.20.Uv Electron energy loss spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
82.33.Ya Chemistry of MOCVD and other vapor deposition methods

Controlled transport of latex beads through vertically aligned carbon nanofiber membranes

L. Zhang, A. V. Melechko, V. I. Merkulov, M. A. Guillorn, M. L. Simpson, D. H. Lowndes, and M. J. Doktycz

Appl. Phys. Lett. 81, 135 (2002); http://dx.doi.org/10.1063/1.1490142 (3 pages) | Cited 26 times

Online Publication Date: 25 June 2002

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Stripes of vertically aligned carbon nanofibers (VACNFs) have been used to form membranes for size selectively controlling the transport of latex beads. Fluidic structures were created in poly(dimethylsiloxane) (PDMS) and interfaced to the VACNF structures for characterization of the membrane pore size. Solutions of fluorescently labeled latex beads were introduced into the PDMS channels and characterized by fluorescence and scanning electron microscopy. Results show that the beads size selectively pass through the nanofiber barriers and the size restriction limit correlates with the interfiber spacing. The results suggest that altering VACNF array density can alter fractionation properties of the membrane. Such membranes may be useful for molecular sorting and for mimicking the properties of natural membranes. © 2002 American Institute of Physics.
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87.16.D- Membranes, bilayers, and vesicles

Positive and negative patterning on a palmitic acid Langmuir–Blodgett monolayer on Si surface using bias-dependent atomic force microscopy lithography

Haeseong Lee, Seung Ae Kim, Sang Jung Ahn, and Haiwon Lee

Appl. Phys. Lett. 81, 138 (2002); http://dx.doi.org/10.1063/1.1491011 (3 pages) | Cited 15 times

Online Publication Date: 25 June 2002

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It is well known that the anodization lithography using an atomic force microscope (AFM) can produce only a positive pattern under a tip negative bias. This study revealed that a negative pattern was generated due to the degradation of a resist under the positive bias. In order to maximize this polarity effect, a Langmuir–Blodgett monolayer of palmitic acid was used as a resist since the degraded molecules would be removed from the negatively biased substrate. This study enables the AFM lithography on a designed resist to generate a negative or positive pattern clearly by changing only one parameter, polarity of the bias. The complete degradation process was confirmed by lateral force microscopy. © 2002 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
81.16.Ta Atom manipulation
68.18.Fg Liquid thin film structure: measurements and simulations

Photoluminescence spectrum of highly excited single CdS nanocrystals studied by a scanning near-field optical microscope

Yoshihiko Kanemitsu, Takeshi J. Inagaki, Masanobu Ando, Kazunari Matsuda, Toshiharu Saiki, and C. W. White

Appl. Phys. Lett. 81, 141 (2002); http://dx.doi.org/10.1063/1.1490141 (3 pages) | Cited 8 times

Online Publication Date: 25 June 2002

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Many-body effects in strongly photoexcited single CdS nanocrystals embedded in Al2O3 matrices have been studied by a scanning near-field optical microscope at low temperatures. Under weak excitations, we find a sharp photoluminescence (PL) band originating from the exciton recombination. With an increase of the excitation laser energy, the PL intensity increases and the broad PL band is superimposed on the exciton-related sharp PL band. From a theoretical analysis, it was concluded that the broadening of the PL band is due to electron-hole pairs in CdS nanocrystals. The many-body effects of correlated exciton systems in CdS nanocrystals will be discussed. © 2002 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Et II-VI semiconductors
71.35.Lk Collective effects (Bose effects, phase space filling, and excitonic phase transitions)
73.22.Lp Collective excitations
68.37.Uv Near-field scanning microscopy and spectroscopy
71.35.Ee Electron-hole drops and electron-hole plasma

ZnO nanobelts grown on Si substrate

Y. B. Li, Y. Bando, T. Sato, and K. Kurashima

Appl. Phys. Lett. 81, 144 (2002); http://dx.doi.org/10.1063/1.1492008 (3 pages) | Cited 99 times

Online Publication Date: 25 June 2002

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Using infrared irradiation to heat an industrial brass (Cu–Zn alloy) disk in moderate vacuum, ZnO nanobelts were directly prepared on a Si substrate. The nanobelts had a single-crystal hexagonal structure and grew along the [0001] direction. The nanobelts had two distinct widths along their entire length. Photoluminescence measurement showed that the nanobelts had an intensive near-band ultraviolet emission at 379 nm. Large-area growth and high quality indicate that the prepared ZnO nanobelts have potential application in optoelectronic devices. © 2002 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Hx Other solid inorganic materials

Spectral mode dynamics of short cavity quantum-dot lasers

Ch. Ribbat, S. Bognar, R. Sellin, and D. Bimberg

Appl. Phys. Lett. 81, 147 (2002); http://dx.doi.org/10.1063/1.1491292 (3 pages) | Cited 7 times

Online Publication Date: 25 June 2002

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Temporally resolved longitudinal mode dynamics for sixfold stacked short cavity quantum-dot lasers is investigated in the μs time range. Results are presented for 10, 20, and 50 μm wide stripes at room temperature and at 100 K. After turn-on a redshift of single longitudinal modes, a blueshift of the mode groups and a redshift of the mean value of the spectra are observed simultaneously. Temperature dependent leakage loss spectra due to leaky substrate modes are calculated. The blueshift of the mode grouping, predicted by the theory, is in good agreement to the experimental data. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.07.Ta Quantum dots
78.67.Hc Quantum dots
81.05.Ea III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.By Design of specific laser systems
78.47.-p Spectroscopy of solid state dynamics

Self-assembled two-dimensional superlattice of Au–Ag alloy nanocrystals

S. T. He, S. S. Xie, J. N. Yao, H. J. Gao, and S. J. Pang

Appl. Phys. Lett. 81, 150 (2002); http://dx.doi.org/10.1063/1.1489722 (3 pages) | Cited 21 times

Online Publication Date: 25 June 2002

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The self-assembled two-dimensional superlattice of octanthiol-passivated Au–Ag alloy nanoparticles is reported in this letter. These nanoparticles show good composition-tunable properties. In the UV-visible spectra, the absorption peaks shifted linearly from the high-energy to the lower-energy side with increasing molar faction of Au. © 2002 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
68.65.Cd Superlattices
78.40.Kc Metals, semimetals, and alloys

Self-assembled fabrication of aluminum–silicon nanowire networks

Maggie Paulose, Craig A. Grimes, Oomman K. Varghese, and Elizabeth C. Dickey

Appl. Phys. Lett. 81, 153 (2002); http://dx.doi.org/10.1063/1.1492005 (3 pages) | Cited 19 times

Online Publication Date: 25 June 2002

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Uniquely structured two-dimensional aluminum–silicon alloy nanowire networks are fabricated on glass and silicon substrates by dealloying an aluminum–silicon thin film through selective chemical etching. The nanowire network is comprised of 3–6 nm diameter wires with lengths of 50–200 nm, and a wire density of approximately 1010 wires/cm2. The spatial extent of the fabricated nanowire network is limited only by the substrate dimensions. Current–voltage measurements reveal the metallic nature of the nanowires, with current propagating throughout the nanowire network. The fabrication route offers the possibility for achieving billion wire/cm2 devices as a relatively low cost production commodity. © 2002 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
73.63.Bd Nanocrystalline materials
81.65.Cf Surface cleaning, etching, patterning

Epitaxial growth of CuGaS2 on Si(111)

H. Metzner, Th. Hahn, J. Cieslak, U. Grossner, U. Reislöhner, W. Witthuhn, R. Goldhahn, J. Eberhardt, G. Gobsch, and J. Kräußlich

Appl. Phys. Lett. 81, 156 (2002); http://dx.doi.org/10.1063/1.1492003 (3 pages) | Cited 7 times

Online Publication Date: 25 June 2002

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We demonstrate the direct heteroepitaxial growth of the ternary semiconductor CuGaS2 on Si(111) substrates by means of molecular beam epitaxy. X-ray diffraction data prove the epitaxial growth of the CuGaS2 films in the highly ordered chalcopyrite structure. Using photoluminescence, we are able to detect strong excitonic emissions up to room temperature, while photocurrent spectra reveal the A, B, and C valence-to-conduction-band transitions as they are typical for the tetragonal chalcopyrite structure. © 2002 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Hd Other semiconductors
61.66.Fn Inorganic compounds
78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects
71.35.-y Excitons and related phenomena
71.20.Nr Semiconductor compounds
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