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1 Jul 2002

Volume 81, Issue 1, pp. 1-184

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N2–H2 remote plasma nitridation for GaAs surface passivation

Maria Losurdo, P. Capezzuto, G. Bruno, G. Perna, and V. Capozzi

Appl. Phys. Lett. 81, 16 (2002); http://dx.doi.org/10.1063/1.1490414 (3 pages) | Cited 8 times

Online Publication Date: 25 June 2002

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A remote N2–H2 (a mixture of 97% N2–3% H2) rf plasma nitridation procedure has been developed to form a very thin ( ∼ 5Å) GaN layer successful in the electronic and chemical passivation of GaAs (100) surfaces. The interaction of the plasma with the GaAs surface has been controlled in situ and in real time by spectroscopic ellipsometry. The stability of the chemical and electronic passivation is demonstrated by the nonoxidation and by the nondecaying behavior of the photoluminescence efficiency of the GaAs passivated surface over months of air exposure. © 2002 American Institute of Physics.
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81.65.Rv Passivation
81.05.Ea III-V semiconductors
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
52.77.-j Plasma applications
78.55.Cr III-V semiconductors
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Atomic oxygen surface loss coefficient measurements in a capacitive/inductive radio-frequency plasma

S. Gomez, P. G. Steen, and W. G. Graham

Appl. Phys. Lett. 81, 19 (2002); http://dx.doi.org/10.1063/1.1490630 (3 pages) | Cited 49 times

Online Publication Date: 25 June 2002

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Spatially resolved measurements of the atomic oxygen densities close to a sample surface in a dual mode (capacitive/inductive) rf plasma are used to measure the atomic oxygen surface loss coefficient β on stainless steel and aluminum substrates, silicon and silicon dioxide wafers, and on polypropylene samples. β is found to be particularly sensitive to the gas pressure for both operating modes. It is concluded that this is due to the effect of changing atom and ion flux to the surface. © 2002 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
52.25.-b Plasma properties
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