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1 Jul 2002

Volume 81, Issue 1, pp. 1-184

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Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates

C. H. Liang, L. C. Chen, J. S. Hwang, K. H. Chen, Y. T. Hung, and Y. F. Chen

Appl. Phys. Lett. 81, 22 (2002); http://dx.doi.org/10.1063/1.1490636 (3 pages) | Cited 101 times

Online Publication Date: 25 June 2002

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This letter reports the synthesis of indium nitride (InN) nanowires on gold-patterned silicon substrates in a controlled manner using a method involving thermal evaporation of pure indium. The locations of these InN nanowires were controlled by depositing gold in desired areas on the substrates. Scanning electron microscopy and transmission electron microscopy investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 80 nm, and lengths up to 5 μm. Energy dispersive x-ray spectrometry showed that the ends of the nanowires are composed primarily of Au, and the rest of the nanowires were InN with no detectable Au incorporations. The Raman spectra showed peaks at 445, 489, and 579 cm−1, which are attributed to the A1(transverse optical), E2, and A1(longitudinal optical) phonon modes of the wurtzite InN structure, respectively. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 1.85 eV. © 2002 American Institute of Physics.
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68.65.La Quantum wires (patterned in quantum wells)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.67.Lt Quantum wires
78.55.Cr III-V semiconductors
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
68.35.Ja Surface and interface dynamics and vibrations
78.30.Fs III-V and II-VI semiconductors

Direct determination of grain sizes, lattice parameters, and mismatch of porous silicon

R. J. Martín-Palma, L. Pascual, P. Herrero, and J. M. Martínez-Duart

Appl. Phys. Lett. 81, 25 (2002); http://dx.doi.org/10.1063/1.1491007 (3 pages) | Cited 32 times

Online Publication Date: 25 June 2002

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High-resolution transmission electron microscopy and digital image processing were used to investigate in detail the structure of porous silicon (PS). It was found that PS is composed of rounded Si nanocrystals with characteristic sizes between 21 and 80 Å, embedded into an amorphous matrix and with no preferential orientation. We have determined that the size distribution of the nanocrystals can be fitted to a Gaussian distribution centered at 45.89 Å. Furthermore, the structure of the individual Si grains was studied, which allowed us to determine that the interplanar distance varies from 3.17 to 3.41 Å, with Gaussian distribution centered at 3.24 Å. Finally, the lattice parameter of the individual Si grains that compose PS was also measured, showing a Gaussian distribution centered at 5.61 Å. The origin of the structure of PS is also discussed. © 2002 American Institute of Physics.
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61.46.-w Structure of nanoscale materials

Sol-gel Er-doped SiO2–HfO2 planar waveguides: A viable system for 1.5 μm application

R. R. Gonçalves, G. Carturan, L. Zampedri, M. Ferrari, M. Montagna, A. Chiasera, G. C. Righini, S. Pelli, S. J. L. Ribeiro, and Y. Messaddeq

Appl. Phys. Lett. 81, 28 (2002); http://dx.doi.org/10.1063/1.1489477 (3 pages) | Cited 18 times

Online Publication Date: 25 June 2002

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70SiO2–30HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.3 to 1 mol %, were prepared by sol-gel route, using dip-coating deposition on silica glass substrates. The waveguides show high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 or 514.5 nm continuous-wave laser light, the waveguides show the 4I13/2→4I15/2 emission band with a bandwidth of 48 nm. The spectral features are found independent both on erbium content and excitation wavelength. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime between 2.9 and 5.0 ms, depending on the erbium concentration. © 2002 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Thermal conductance and electron-phonon coupling in mechanically suspended nanostructures

C. S. Yung, D. R. Schmidt, and A. N. Cleland

Appl. Phys. Lett. 81, 31 (2002); http://dx.doi.org/10.1063/1.1491300 (3 pages) | Cited 26 times

Online Publication Date: 25 June 2002

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We have fabricated and characterized the principal thermal properties of a mechanically suspended nanostructure, consisting of a micron-scale suspended GaAs island, upon which we have defined superconductor-insulator-normal metal tunnel junctions. The tunnel junctions allow for sensitive thermometry and heating of the electrons in a thermally isolated normal metal element, permitting the determination of the low-temperature thermal conductance of the legs that support the GaAs island, as well as the low-temperature electron-phonon coupling. This device forms the basis of a nanoscale bolometric detector, whose optical performance can be estimated from these measurements. © 2002 American Institute of Physics.
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07.20.Dt Thermometers
73.63.Rt Nanoscale contacts
61.46.-w Structure of nanoscale materials
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Green emission from B2N2CO thin films doped with Tb

Q. L. Liu, F. X. Zhang, T. Tanaka, and T. Aizawa

Appl. Phys. Lett. 81, 34 (2002); http://dx.doi.org/10.1063/1.1490143 (3 pages) | Cited 9 times

Online Publication Date: 25 June 2002

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Visible light emission has been obtained at room temperature by photoluminescence (PL) and cathodoluminescence (CL) from Tb-doped B2N2CO thin films prepared by radio-frequency magnetron sputtering. The films were deposited by sputtering TbBn (n = 4, 6, 12, 25, and 50) targets in an atmosphere of Ar and N2 gas mixture. The films are uniformly composed of very small particles with particle size of about 20–40 nm, which consist of turbostratic BN phase and amorphous phase. The characteristic PL peaks are observed in the spectral range from 300 to 800 nm, and correspond to the two groups of transitions of Tb3+ ions: 5D3→7FJ (J = 6, 5, 3) and 5D4→7FJ (J = 6, 5, 4, 3). The strongest PL peak at ∼ 547.2 nm is about four times greater than the other signals in the investigated range, indicating that the films have strong green light emission. CL intensity is very weakly dependent on the temperature. © 2002 American Institute of Physics.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
78.60.Hk Cathodoluminescence, ionoluminescence
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering

Formation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy

G. Pető, G. Molnár, E. Kótai, I. Dézsi, M. Karsteen, U. Södervall, M Willander, M. Caymax, and R. Loo

Appl. Phys. Lett. 81, 37 (2002); http://dx.doi.org/10.1063/1.1491012 (3 pages) | Cited 3 times

Online Publication Date: 25 June 2002

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CoxTi1−x layers were deposited on Si (100) and on Si/Si80Ge20 (100) capped with 30- or 40-nm-thick Si at 650 °C substrate temperature at 1×10−6 Pa pressure. The Co–silicide films grown by reactive deposition epitaxy were characterized by Rutherford backscattering-channeling, x-ray difraction, by depth profile analysis of the components, and by sheet resistance measurements. The Ti content of the deposited Co layers was between 0.1 and 8 at. %. The epitaxy of the layers on Si and on Si/Si80Ge20 improved by increasing the Ti concentration. The minimum yield of the channeling and the full width at half maximum value of the rocking curve of CoSi2 decreased. The sheet resisitance of the formed layers was also minimal in these cases. The method applied is promising to form epitaxial CoSi2 layers on SixGe1−x substrates. © 2002 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.At Metal and metallic alloys
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)

Platinum–hydrogen complexes in silicon observed by measurements of optical absorption and electron spin resonance

N. Fukata, T. Mchedlidze, M. Suezawa, K. Saito, and A. Kasuya

Appl. Phys. Lett. 81, 40 (2002); http://dx.doi.org/10.1063/1.1491008 (3 pages) | Cited 5 times

Online Publication Date: 25 June 2002

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Platinum–hydrogen (Pt–H) complexes in Si doped with Pt and H by heating at 1000–1300 °C followed by quenching in water were investigated from the measurements of optical absorption at 5 K and electron spin resonance (ESR) at 8 K. Optical absorption peaks at 1909.1 and 1910.3 cm−1 were observed in addition to the peaks due to the PtH and PtH2 complexes. The H doping temperature dependence of these peaks showed that the number of H atoms in the complex responsible for the 1909.1 cm−1 peak is larger than that for the 1910.3 cm−1 peak. We also observed ESR signals due to the PtH3 complex. The annealing behaviors of the 1910.3 cm−1 peak and the ESR signals were almost the same. Based on these results, the 1909.1 and 1910.3 cm−1 peaks are, respectively, assigned to the PtH4 complex and the PtH3 complex. © 2002 American Institute of Physics.
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78.40.Fy Semiconductors
76.30.He Platinum and palladium group (4d and 5d) ions and impurities (Zr-Ag and Hf-Au)
61.72.S- Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys

S. Bhattacharya, Terry M. Tritt, Y. Xia, V. Ponnambalam, S. J. Poon, and N. Thadhani

Appl. Phys. Lett. 81, 43 (2002); http://dx.doi.org/10.1063/1.1488698 (3 pages) | Cited 31 times

Online Publication Date: 25 June 2002

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Half-Heusler alloys with the general formula TiNiSn1−xSbx are currently being investigated for their potential as thermoelectric (TE) materials. A systematic investigation of the effect of Sb doping on the Sn site and Zr doping on the Ti site on the electrical and thermal transport of the TiNiSn system has been performed. Unexpectedly, lattice thermal conductivity κL appears to increase somewhat randomly with small amounts (x<5%) of Sb doping. Subsequently, an investigation of grain structure in these Sb-doped materials has been found to correlate with the anomalous behavior of κL. Furthermore, effects of submicron grain sizes on κL in ball milled and shock compressed samples are also presented. © 2002 American Institute of Physics.
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72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
72.15.Jf Thermoelectric and thermomagnetic effects
61.72.-y Defects and impurities in crystals; microstructure

Electronic and field emission properties of boron nitride/carbon nanotube superlattices

Vincent Meunier, Christopher Roland, J. Bernholc, and Marco Buongiorno Nardelli

Appl. Phys. Lett. 81, 46 (2002); http://dx.doi.org/10.1063/1.1491013 (3 pages) | Cited 27 times

Online Publication Date: 25 June 2002

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BN/C nanotube superlattices are quasi one-dimensional heterostructures that show unique physical properties derived from their peculiar geometry. Using state-of-the-art ab initio calculations, we show that BN/C systems can be used for effective band-offset nanodevice engineering, polarization-based devices, and robust field emitters with an efficiency enhanced by up to two orders of magnitude over carbon nanotube systems. © 2002 American Institute of Physics.
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73.21.Cd Superlattices
73.22.Dj Single particle states
79.70.+q Field emission, ionization, evaporation, and desorption
73.63.Fg Nanotubes
61.46.-w Structure of nanoscale materials
71.15.-m Methods of electronic structure calculations

Quantum wells with atomically smooth interfaces

Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West

Appl. Phys. Lett. 81, 49 (2002); http://dx.doi.org/10.1063/1.1490144 (3 pages) | Cited 30 times

Online Publication Date: 25 June 2002

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By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs heterointerfaces without atomic roughness. Microphotoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of microns in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation. © 2002 American Institute of Physics.
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68.65.Fg Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.07.St Quantum wells
68.35.Ct Interface structure and roughness
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Time-resolved studies of photoluminescence in GaNxP1−x alloys: Evidence for indirect-direct band gap crossover

I. A. Buyanova, G. Pozina, J. P. Bergman, W. M. Chen, H. P. Xin, and C. W. Tu

Appl. Phys. Lett. 81, 52 (2002); http://dx.doi.org/10.1063/1.1491286 (3 pages) | Cited 32 times

Online Publication Date: 25 June 2002

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Time resolved photoluminescence spectroscopy is employed to monitor the effect of N incorporation on the band structure of GaNP alloys. Abrupt shortening in radiative lifetime of near-band gap emissions, arising from excitonic radiative recombination within N-related centers, is found to occur at very low N compositions of around 0.5%, i.e., within the same range as the appearance of the direct-band gap-like transitions in the photomodulated transmission spectra of GaNP reported previously. The effect has been attributed to an enhancement in oscillator strength of optical transitions due to band crossover from indirect to direct-band gap of the alloy. © 2002 American Institute of Physics.
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71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
71.35.-y Excitons and related phenomena
78.40.Fy Semiconductors

Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline–silicon interface

A. Alberti, F. La Via, and E. Rimini

Appl. Phys. Lett. 81, 55 (2002); http://dx.doi.org/10.1063/1.1488697 (3 pages) | Cited 3 times

Online Publication Date: 25 June 2002

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N-induced cavity nucleation at the CoSi2/Si interface has been investigated for different doses and its influence on improving the thermal stability of the silicide layer up to 1075 °C has been detailed. The N-implant energy and doses have been chosen in such a way that the projected range (Rp) was near the interface and the underlying polycrystalline silicon substrate was completely amorphized. After a thermal treatment of 975 °C, it has been found that the cavity density depends on the dose, but the cavity size is dose independent. The cavity density should be enough to saturate the silicide grain boundaries but not so high to neglect ripening and coalescence. A density of 2.5×1010 cavities/cm2 has been measured at a nitrogen dose of 7×1015/cm2 corresponding to a partial saturation of the silicide grain boundaries and to the higher stability gain (150 °C). © 2002 American Institute of Physics.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.72.Mm Grain and twin boundaries
61.72.uf Ge and Si
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
81.40.Gh Other heat and thermomechanical treatments
68.35.Ct Interface structure and roughness

Effect of doping on photoluminescence upconversion in GaAs/AlxGa1−xAs heterostructures

Hyeonsik M. Cheong, Doseok Kim, Mark C. Hanna, and Angelo Mascarenhas

Appl. Phys. Lett. 81, 58 (2002); http://dx.doi.org/10.1063/1.1491303 (3 pages) | Cited 1 time

Online Publication Date: 25 June 2002

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We report on the effect of doping on the efficiency of the upconverted photoluminescence (UPL) from GaAs/AlGaAs heterostructures. The UPL intensity is enhanced when the AlGaAs layer is remotely doped with holes. It indicates that the rate-limiting process for the upconversion is the excitation of holes. Our result shows that one has to be careful in interpreting the excitation power dependence of the UPL intensity because dissimilar excitation efficiencies for electrons and holes and a possible background doping of the samples can significantly modify the excitation power dependence. © 2002 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
61.72.uj III-V and II-VI semiconductors

Two-step As-desorption from (001) InP observed by surface photoabsorption

T. J. Kim, Y. S. Ihn, G. Y. Seong, Y. D. Kim, T. W. Lee, H. Hwang, S. Yoon, and E. Yoon

Appl. Phys. Lett. 81, 61 (2002); http://dx.doi.org/10.1063/1.1491299 (3 pages) | Cited 1 time

Online Publication Date: 25 June 2002

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The investigation of As desorption from the (001) InP during metalorganic chemical vapor deposition was performed using surface photoabsorption (SPA). The behavior of the monochromatic SPA signal showed a clear existence of a metastable state after the AsH3 was turned off. SPA spectra at each stable surface were taken to confirm the interpretation. This result indicates that the previous criterion to measure the amount of As/P exchange reaction is not necessarily correct and that the As-desorption process should be understood as a two-step process. © 2002 American Institute of Physics.
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68.43.Mn Adsorption kinetics
78.40.Fy Semiconductors
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
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