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25 Nov 2002

Volume 81, Issue 22, pp. 4103-4293

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Optical waveguides produced in LiF by MeV ion beam bombardment

M. Cremona, J. A. M. Pereira, S. Pelli, and G. C. Righini

Appl. Phys. Lett. 81, 4103 (2002); http://dx.doi.org/10.1063/1.1524302 (3 pages) | Cited 10 times

Online Publication Date: 19 November 2002

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In this letter, the development of a simple method, based on high-energy light-ion beam irradiation, to create active waveguides in alkali halide materials is reported. A 1.1 MeV He+ beam at normal incidence was used to irradiate lithium fluoride crystals, with different ion doses varying from 1×1012 up to 6×1015 cm−2, producing thin colored strips. All strips showed several guided modes, confirming the effectiveness of this technique to create the conditions to allow guided propagation. Values of 1.5 dB/cm were found for the propagation losses. © 2002 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
61.80.Jh Ion radiation effects
61.82.Ms Insulators
61.72.up Other materials

Simultaneous generation of coherent light in the three fundamental colors by quasicylindrical ferroelectric domains in Sr0.6Ba0.4(NbO3)2

J. J. Romero, D. Jaque, J. García Solé, and A. A. Kaminskii

Appl. Phys. Lett. 81, 4106 (2002); http://dx.doi.org/10.1063/1.1523156 (3 pages) | Cited 28 times

Online Publication Date: 19 November 2002

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Continuous-wave red, green, and blue coherent light has been simultaneously generated by quasiphase matching in a strontium barium niobate crystal used as an intracavity frequency converter of a Nd:YVO4 laser operating at 1.34 μm. The broad distribution of ferroelectric domain sizes (1–8 μm) provides the possibility of different simultaneous frequency conversion processes without requiring angle or temperature tuning. Blue and red colors were generated by second-harmonic generation of pump (0.88 μm) and infrared (1.34 μm) laser radiation, respectively. Green light was produced by sum frequency mixing of pump and laser radiations. © 2002 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
77.80.Dj Domain structure; hysteresis

Heterodyne near-field scattering

Doriano Brogioli, Alberto Vailati, and Marzio Giglio

Appl. Phys. Lett. 81, 4109 (2002); http://dx.doi.org/10.1063/1.1524702 (3 pages) | Cited 21 times

Online Publication Date: 19 November 2002

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We describe an optical technique based on the statistical analysis of the random intensity distribution due to the interference of the near-field scattered light with the strong transmitted beam. It is shown that, from the study of the two-dimensional power spectrum of the intensity, one derives the scattered intensity as a function of the scattering wave vector. Near-field conditions are specified and discussed. The substantial advantages over traditional scattering technique are pointed out, and is indicated that the technique could be of interest for wavelengths other than visible light. © 2002 American Institute of Physics.
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42.25.Fx Diffraction and scattering
42.25.Dd Wave propagation in random media
42.30.Ms Speckle and moiré patterns
82.70.Kj Emulsions and suspensions
82.70.Dd Colloids

Tunable multichannel optical filter based on silicon photonic band gap materials actuation

Yasha Yi, Peter Bermel, Kazumi Wada, Xiaoman Duan, J. D. Joannopoulos, and L. C. Kimerling

Appl. Phys. Lett. 81, 4112 (2002); http://dx.doi.org/10.1063/1.1525072 (3 pages) | Cited 17 times

Online Publication Date: 19 November 2002

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A Si-based tunable omnidirectional reflecting photonic band gap structure with a relatively large air gap defect is fabricated and measured. Using only one device, low-voltage tuning around two telecom wavelengths of 1.55 and 1.3 μm by electrostatic force is realized. Four widely spaced resonant modes within the photonic band gap are observed, which is in good agreement with numerical simulations. The whole process is at low temperature and can be compatible with current microelectronics process technology. There are several potential applications of this technology in wavelength division multiplexing devices. © 2002 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.70.Qs Photonic bandgap materials

Study of ZnCdTe crystals as terahertz wave emitters and detectors

Kai Liu, Hyun-Shik Kang, Tae-Kyu Kim, and X.-C. Zhang

Appl. Phys. Lett. 81, 4115 (2002); http://dx.doi.org/10.1063/1.1524696 (3 pages) | Cited 10 times

Online Publication Date: 19 November 2002

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We report a systematic study of ternary ZnCdTe crystals as terahertz wave emitters and sensors with a femtosecond Ti:sapphire laser. Experimental measurements of the generation and detection of terahertz waves from 〈110〉-oriented Zn1−xCdxTe crystals indicate the optimum composition x = 0.05. We also report generation and detection of terahertz wave from doped crystals. For terahertz wave applications, the resistivity of these crystals should be greater than 100 Ω cm. © 2002 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
42.72.Ai Infrared sources
81.05.Dz II-VI semiconductors
61.66.Bi Elemental solids
61.66.Dk Alloys
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors

Dynamics of stimulated emission in InAs quantum-dot laser structures measured in pump-probe experiments

A. I. Tartakovskii, K. M. Groom, A. M. Adawi, A. Lemaître, A. M. Fox, D. J. Mowbray, M. S. Skolnick, and M. Hopkinson

Appl. Phys. Lett. 81, 4118 (2002); http://dx.doi.org/10.1063/1.1524694 (3 pages) | Cited 2 times

Online Publication Date: 19 November 2002

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Nonlinear carrier-photon dynamics are studied for optically pumped InAs quantum-dot (QD) laser structures, using excitation into the GaAs barrier by two degenerate pump and probe laser pulses. The nonlinear emission from QDs excited by the pump pulse is further amplified by the probe excitation. By varying the delay between the two pulses, a very fast decay of the QD excited state emission is measured. Notably slower dynamics for the QD ground state are observed, governed by state filling phenomena that result in gain saturation. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.66.Fd III-V semiconductors
78.67.Hc Quantum dots
81.07.Ta Quantum dots
78.45.+h Stimulated emission
78.47.-p Spectroscopy of solid state dynamics

Holographic recording in TiO2 nanoparticle-dispersed methacrylate photopolymer films

Naoaki Suzuki, Yasuo Tomita, and Takashi Kojima

Appl. Phys. Lett. 81, 4121 (2002); http://dx.doi.org/10.1063/1.1525391 (3 pages) | Cited 76 times

Online Publication Date: 19 November 2002

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We demonstrate permanent holographic storage in the green with high diffraction efficiency and recording sensitivity in TiO2 nanoparticle-dispersed methacrylate photopolymer films. It is shown that the diffraction efficiency as well as the recording sensitivity significantly increase with an increase of nanoparticle concentration. It is also found that volumetric shrinkage during holographic exposure is noticeably suppressed by inclusion of the nanoparticles. © 2002 American Institute of Physics.
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42.70.Ln Holographic recording materials; optical storage media
42.70.Jk Polymers and organics
42.40.Eq Holographic optical elements; holographic gratings
42.40.Ht Hologram recording and readout methods

Single-shot supercontinuum spectral interferometry

K. Y. Kim, I. Alexeev, and H. M. Milchberg

Appl. Phys. Lett. 81, 4124 (2002); http://dx.doi.org/10.1063/1.1524701 (3 pages) | Cited 21 times

Online Publication Date: 19 November 2002

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We have developed a single-shot spectral interferometer using the supercontinuum pulse generated by self-focusing in atmospheric pressure air. The diagnostic can be used to measure ultrafast refractive index transients either in a direct frequency-to-time mapping mode or in a full Fourier transform mode. In the direct mapping mode, temporal resolution is shown to be strongly restricted by the pulse chirp. In the transform mode, the ultimate temporal resolution is limited by the supercontinuum pulse bandwidth and the maximum pump-induced phase shift. © 2002 American Institute of Physics.
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07.60.Ly Interferometers
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
42.30.Kq Fourier optics

13–30 micron diameter microdischarge devices: Atomic ion and molecular emission at above atmospheric pressures

S.-J. Park and J. G. Eden

Appl. Phys. Lett. 81, 4127 (2002); http://dx.doi.org/10.1063/1.1520707 (3 pages) | Cited 23 times

Online Publication Date: 19 November 2002

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Cylindrical microdischarge devices having cavity diameters as small as 13 μm and volumes as low as several nanoliters have been fabricated in metal/polymer structures with and without screen electrodes. These devices produce stable glow discharges in Ne, Xe, air, Xe/O2, and Ne/air mixtures at total pressures up to the maximum investigated, 1200 Torr. Neon discharges in 30 μm diameter devices are well behaved for pNe above 700 Torr (pd>2.1 Torr cm) and generate strong emission in the UV from singly charged Ne-ion transitions at above-atmospheric pressures. Fluorescence in the visible from Xe+ and Xe2+ as well as molecular features in the green (∼530 nm) and blue (∼484 nm) that appear to be attributable to the neutral dimer are also observed from Xe in the 650–1100 Torr range. Discharges in air (100–740 Torr) and Ne/air mixtures produce strong N2(C→B) and N2+(B→X) emission in the near-UV and violet. The lowest observed operating voltage for Ne discharges in 30 μm devices is 87 V (pNe = 1200 Torr). Discharges in microcavities of dimensions below 50 μm represent a unique spectroscopic tool. © 2002 American Institute of Physics.
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52.80.Yr Discharges for spectral sources (including inductively coupled plasma)
42.72.Bj Visible and ultraviolet sources
52.80.Hc Glow; corona
32.50.+d Fluorescence, phosphorescence (including quenching)
33.50.Dq Fluorescence and phosphorescence spectra
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Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai

Appl. Phys. Lett. 81, 4130 (2002); http://dx.doi.org/10.1063/1.1524298 (3 pages) | Cited 46 times

Online Publication Date: 19 November 2002

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Polarization effects have been studied in GaN/AlGaN multiple quantum wells (MQWs) with different c-axis orientation by means of excitation-dependent photoluminescence (PL) analysis. Quantum structures were grown on [0001]-oriented sapphire substrates (C plane) and single-crystalline [1math00]-oriented freestanding GaN (M plane) using the metalorganic chemical vapor deposition technique. Strong PL spectrum line blueshifts (up to 140 meV) which are correlated with the excitation intensity have been obtained for C-plane MQWs, whereas no shift has been observed for M-plane MQWs. Theoretical calculations and comparison with the PL data confirm that the built-in electric field for C-plane structures is much stronger than the field present for M-plane MQWs. In the former case, the excitation-induced blueshift of the PL line is due to the screening of the built-in electric field by photoinjected carriers, which is consistent with the field strength of 1.23 MV/cm in the absence of excitation. © 2002 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.67.De Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Melting and expansion behavior of indium in carbon nanotubes

Yihua Gao, Yoshio Bando, and Dmitri Golberg

Appl. Phys. Lett. 81, 4133 (2002); http://dx.doi.org/10.1063/1.1524293 (3 pages) | Cited 16 times

Online Publication Date: 19 November 2002

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Indium-filled carbon nanotubes were synthesized via a simple chemical vapor deposition. The carbon nanotubes had diameters of 100–200 nm and length of ∼10 μm. The melting and expansion behavior of the indium in carbon nanotubes were investigated in an analytical transmission electron microscope. It was found that the melting and expansion behavior of indium were different from that in a macroscopic state. The melting behavior was explained using a particular equation developed for a nanoscale indium column. The analysis of the expansion behavior allows us to clarify the problems of indium filling usage in carbon nanotube-based nanothermometer. © 2002 American Institute of Physics.
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65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
61.46.-w Structure of nanoscale materials
64.70.Nd Structural transitions in nanoscale materials
62.25.-g Mechanical properties of nanoscale systems
81.07.De Nanotubes
64.70.D- Solid-liquid transitions
65.20.-w Thermal properties of liquids
65.40.De Thermal expansion; thermomechanical effects
07.20.Dt Thermometers
68.37.Lp Transmission electron microscopy (TEM)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.03.Cd Surface tension and related phenomena

Formation of face-centered-cubic zirconium by mechanical attrition

I. Manna, P. P. Chattopadhyay, F. Banhart, and H.-J. Fecht

Appl. Phys. Lett. 81, 4136 (2002); http://dx.doi.org/10.1063/1.1519942 (3 pages) | Cited 19 times

Online Publication Date: 19 November 2002

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This study reports a hcp→fcc polymorphic transformation in elemental zirconium induced by mechanical attrition in a planetary ball mill. The transformation is monitored and verified by x-ray and electron diffraction and high-resolution transmission electron microscopy. Grain size decreases and lattice parameter increases with continued milling. The phase change is gradual and is accompanied by about 9% increase in volume per atom. It is suggested that structural instability due to plastic strain, increasing lattice expansion, and negative (from core to boundary) hydrostatic pressure is responsible for this hcp→fcc polymorphic transformation in zirconium. © 2002 American Institute of Physics.
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61.50.Ks Crystallographic aspects of phase transformations; pressure effects
64.70.K- Solid-solid transitions
81.20.Wk Machining, milling
81.05.Bx Metals, semimetals, and alloys
61.66.Bi Elemental solids
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Thermal stress hardening of a-Si3N4/nc-TiN nanostructured multilayers

Junhua Xu, Lihua Yu, Yasushi Azuma, Toshiyuki Fujimoto, Hiroyuki Umehara, and Isao Kojima

Appl. Phys. Lett. 81, 4139 (2002); http://dx.doi.org/10.1063/1.1525852 (3 pages) | Cited 15 times

Online Publication Date: 19 November 2002

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Amorphous/nanopolycrystalline Si3N4/TiN nanostructured multilayer films have been fabricated by radio-frequency reactive magnetron sputtering. The effects of deposition temperature, modulation period, and the layer thickness ratio on the hardness have been studied, in order to elucidate the hardening mechanisms in these multilayers. The hardness of the Si3N4/TiN multilayers is affected not only by the modulation periods, but also by the layer thickness ratio and deposition temperature. The hardness value is about 40% higher than the value calculated from the rule of mixtures at a deposition temperature of 500 °C and a modulation ratio (lSi3N4/lTiN) of 3/1. Based on the experimental results, it is suggested that the alternating stress field caused by thermal mismatch between Si3N4 and TiN is one of the main reasons for the superhardness effect in Si3N4/TiN nanostructured multilayers. © 2002 American Institute of Physics.
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68.65.Ac Multilayers
68.35.Gy Mechanical properties; surface strains
62.25.-g Mechanical properties of nanoscale systems
61.43.Er Other amorphous solids
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
81.15.Cd Deposition by sputtering
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness
81.07.Bc Nanocrystalline materials

Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

F. Yun, M. A. Reshchikov, L. He, H. Morkoç, C. K. Inoki, and T. S. Kuan

Appl. Phys. Lett. 81, 4142 (2002); http://dx.doi.org/10.1063/1.1524304 (3 pages) | Cited 11 times

Online Publication Date: 19 November 2002

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Porous SiC (PSiC) substrates were used for the growth of GaN by reactive molecular-beam epitaxy with ammonia as the nitrogen source. Improved quality of GaN films has been demonstrated for growth on PSiC substrates, as compared to that on standard 6H–SiC substrates. Cross-sectional transmission electron microscopy and electron diffraction showed a reduction in dislocation density and a higher degree of lattice and thermal relaxation in the GaN films grown on porous substrates. The submicron GaN films exhibit a rocking curve linewidth of 3.3 arcmin for (0002) diffraction and 13.7 arcmin for (10math2) diffraction. Low-temperature photoluminescence showed an excitonic transition with a full width at half maximum of 9.5 meV at 15 K, as well as high quantum efficiency, on the GaN layer grown on PSiC when the thin skin layer on porous SiC was removed before growth. © 2002 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure

T. Taniguchi, K. Watanabe, S. Koizumi, I. Sakaguchi, T. Sekiguchi, and S. Yamaoka

Appl. Phys. Lett. 81, 4145 (2002); http://dx.doi.org/10.1063/1.1524295 (3 pages) | Cited 16 times

Online Publication Date: 19 November 2002

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Ultraviolet light emission at a wavelength of 250 nm was observed from Be-doped single crystals of cubic boron nitride (cBN) grown at high pressure and high temperatures. We found that dopants of Be were localized in the grown crystals when a small amount of Be was added to the crystals. The crystals had boundaries of blue-colored Be-rich regions and amber-colored ones. These colored regions were divided by the boundaries of growth sectors. When a direct current was induced across the boundaries, UV light emission was clearly observed. The crystals may include self-organized p–n regions along the growth sectors. Although some crystalline imperfections still prevent the crystals from exhibiting properties of materials that can emit UV light with a wide band gap (6.3 eV), it is noticeable that bulk single crystals have been synthesized that contain self-organized p–n boundaries and show UV light emission. © 2002 American Institute of Physics.
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78.60.Fi Electroluminescence
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
62.50.-p High-pressure effects in solids and liquids
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Photopyroelectric structural and thermal characterization of first-order phase transition in liquid crystals

F. Mercuri, R. Pizzoferrato, U. Zammit, and M. Marinelli

Appl. Phys. Lett. 81, 4148 (2002); http://dx.doi.org/10.1063/1.1524290 (3 pages) | Cited 9 times

Online Publication Date: 19 November 2002

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A photopyroelectric setup, which allows the study of the thermal behavior and the structural evolution of 8CB liquid crystal at the first-order nematic–isotropic phase transition, is presented. It is shown that the kinetics of the transition in liquid-crystal films are not the same on heating and cooling, and a quantitative determination of the width of the two-phase coexistence region is reported. A correlation between the photopyroelectric signal and the liquid-crystal morphology in the coexistence region has been found. © 2002 American Institute of Physics.
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64.70.M- Transitions in liquid crystals
77.70.+a Pyroelectric and electrocaloric effects
72.40.+w Photoconduction and photovoltaic effects

Enhanced thermal stability of strong gratings written in H-loaded tin-phosphosilicate optical fibers

Gilberto Brambilla

Appl. Phys. Lett. 81, 4151 (2002); http://dx.doi.org/10.1063/1.1525850 (3 pages) | Cited 3 times

Online Publication Date: 19 November 2002

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Enhanced photosensitivity has been observed in hydrogen-loaded tin-phosphosilicate fibers by using a 248 nm excimer laser. Isothermal measurements up to 860 K demonstrated significant advantages over fiber gratings written in conventional H-loaded fibers. © 2002 American Institute of Physics.
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42.79.Dj Gratings
42.81.Wg Other fiber-optical devices
42.40.Eq Holographic optical elements; holographic gratings

Blue cathodoluminescence from Ba2B5O9Cl:Eu phosphor thin films on glass substrates

Jianhua Hao and Michael Cocivera

Appl. Phys. Lett. 81, 4154 (2002); http://dx.doi.org/10.1063/1.1525879 (3 pages) | Cited 25 times

Online Publication Date: 19 November 2002

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Spray pyrolysis was used to deposit thin films of Ba2B5O9Cl:Eu from aqueous solutions containing Eu3+. Blue cathodoluminescence due to the abnormal reduction of Eu3+→Eu2+ in as-grown thin films was observed at the growth temperatures from 140 °C to 500 °C. Significant line narrowing was found as the growth temperature increased. Using either conventional or rapid thermal annealing of thin films in air enhanced the transition of the emission spectrum from several peaks to a sharp single peak. Our results also provide the possibility of tuning the blue emission at temperatures suitable for the use of glass substrates in flat panel applications. © 2002 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Nk Insulators
81.15.Rs Spray coating techniques
81.40.Tv Optical and dielectric properties related to treatment conditions
68.55.A- Nucleation and growth
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.05.Cy Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.40.Gh Other heat and thermomechanical treatments
61.82.Ms Insulators

Thermal stability of polycrystalline silicon/metal oxide interfaces

A. Callegari, E. Gousev, T. Zabel, D. Lacey, M. Gribelyuk, and P. Jamison

Appl. Phys. Lett. 81, 4157 (2002); http://dx.doi.org/10.1063/1.1526150 (2 pages) | Cited 2 times

Online Publication Date: 19 November 2002

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The thermal stability of polycrystalline silicon (poly-Si)/ZrO2 interface was significantly enhanced when the poly-Si was plasma deposited using silane heavily diluted in He. With regard to this process, transmission electron microscopy shows a sharp poly-Si/ZrO2 interface that is stable at 1000 °C. When the poly-Si was deposited by chemical vapor deposition using undiluted silane gas, transmission electron microscopy shows strong reactions at the poly-Si/ZrO2 interface when annealed at 1000 °C. The increased stability can be attributed to He dilution, which may prevent hydrogen from reducing the metal oxide. Another explanation may be directly related to He-excited plasma, which is known to produce denser and more stable films. © 2002 American Institute of Physics.
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68.60.Dv Thermal stability; thermal effects
68.35.Ct Interface structure and roughness
68.37.Lp Transmission electron microscopy (TEM)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

High-temperature centrifugation: a tool for finding eutectic compositions in multicomponent alloys

Jörg F. Löffler, Sven Bossuyt, Atakan Peker, and William L. Johnson

Appl. Phys. Lett. 81, 4159 (2002); http://dx.doi.org/10.1063/1.1522820 (3 pages) | Cited 8 times

Online Publication Date: 19 November 2002

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A metallic melt of composition Al52.6Cu13.4Ge28Si6 was processed for 2 h in a centrifuge at a temperature of 530 °C and inertial acceleration of 60 000 g (g = gravitational acceleration), and then slowly cooled to room temperature during continuous centrifugation. Primary phases forming in the melt during cooling were sequentially separated from the remaining liquid, changing the composition of the liquid, until it solidified in a ternary eutectic microstructure of composition Al64Cu3Ge33. Presenting scanning electron microscope images, we demonstrate that this method of high-temperature centrifugation is a efficient tool to isolate and identify multiphase eutectic compositions and the sequence of crystallization in multicomponent alloys. The latter is particularly useful for the discovery of new bulk metallic glasses. © 2002 American Institute of Physics.
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81.05.Bx Metals, semimetals, and alloys
64.75.-g Phase equilibria
64.70.D- Solid-liquid transitions
81.05.Kf Glasses (including metallic glasses)

Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements

M. U. González, Y. González, and L. González

Appl. Phys. Lett. 81, 4162 (2002); http://dx.doi.org/10.1063/1.1524303 (3 pages) | Cited 8 times

Online Publication Date: 19 November 2002

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Strain evolution during In0.2Ga0.8As/GaAs (001) growth by molecular beam epitaxy has been monitored in real time. We have detected that three main relaxation stages, related to different mechanisms, take place during growth, and we have obtained the thickness range where those mechanisms are active. The in situ measured relaxation behavior in the plastic stages has been described by means of a simple equilibrium model that takes into account dislocations generation and interaction between them. The excellent agreement between the experimental data and the model allows us to determine the value of the formation energy per unit length of a misfit dislocation and the extent of the interaction between dislocations in this material system. © 2002 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors

Patterning organic light-emitting diodes by cathode transfer

Jungsoo Rhee and Hong H. Lee

Appl. Phys. Lett. 81, 4165 (2002); http://dx.doi.org/10.1063/1.1525878 (3 pages) | Cited 22 times

Online Publication Date: 19 November 2002

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A technique is presented for patterning the metal cathode of organic light-emitting diodes that allows for cathode engineering. The technique involves transferring pretreated and prepatterned metal on a substrate onto the surface of organic layers of the device by pressing, utilizing a difference in the adhesion strength of the metal between the substrate and the underlying organic layer. This cathode transfer technique is applied to fabricating a 20×10 passive matrix display with a pixel size of 250 μm by 250 μm. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.60.Pg Display systems

Electromigration-induced plastic deformation in passivated metal lines

B. C. Valek, J. C. Bravman, N. Tamura, A. A. MacDowell, R. S. Celestre, H. A. Padmore, R. Spolenak, W. L. Brown, B. W. Batterman, and J. R. Patel

Appl. Phys. Lett. 81, 4168 (2002); http://dx.doi.org/10.1063/1.1525880 (3 pages) | Cited 24 times

Online Publication Date: 19 November 2002

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We have used scanning white beam x-ray microdiffraction to study microstructural evolution during an in situ electromigration experiment on a passivated Al(Cu) test line. The data show plastic deformation and grain rotations occurring under the influence of electromigration, seen as broadening, movement, and splitting of reflections diffracted from individual metal grains. We believe this deformation is due to localized shear stresses that arise due to the inhomogeneous transfer of metal along the line. Deviatoric stress measurements show changes in the components of stress within the line, including relaxation of stress when current is removed. © 2002 American Institute of Physics.
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66.30.Qa Electromigration
85.40.Ls Metallization, contacts, interconnects; device isolation
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.05.cp X-ray diffraction
61.72.-y Defects and impurities in crystals; microstructure
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Suppression of silicidation in ZrO2/SiO2/Si structure by helium annealing

Kouichi Muraoka

Appl. Phys. Lett. 81, 4171 (2002); http://dx.doi.org/10.1063/1.1525393 (3 pages) | Cited 2 times

Online Publication Date: 19 November 2002

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Suppression of silicidation in ZrO2/SiO2/Si structure by high-temperature helium (He) gas annealing was demonstrated. Comparison of ultrahigh vacuum, 1 Torr N2 and He annealing with controlled oxygen partial pressure (PO2) at 920 °C revealed that the optimal PO2 range in He at which the thermal stability of the layered structure can be achieved is over one order wider than that in N2. This result suggests that He gas physically obstructs SiO removal through the quenching of atomic vibration and the occupation of SiO diffusion path in the ZrO2/SiO2 layer, thus impeding the contact of ZrO2, SiO, and Si effectively, which is the trigger of silicidation. Moreover, rapid thermal He annealing is found to be the most effective means of suppressing transition of interface structure. © 2002 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.43.Mn Adsorption kinetics
61.72.Cc Kinetics of defect formation and annealing
68.60.Dv Thermal stability; thermal effects
68.35.Ct Interface structure and roughness
77.55.-g Dielectric thin films

Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix

Y. Q. Wang, G. L. Kong, W. D. Chen, H. W. Diao, C. Y. Chen, S. B. Zhang, and X. B. Liao

Appl. Phys. Lett. 81, 4174 (2002); http://dx.doi.org/10.1063/1.1525395 (3 pages) | Cited 40 times

Online Publication Date: 19 November 2002

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Silicon nanocrystals in SiO2 matrix are fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing. The structure and photoluminescence (PL) of the resulting films is investigated as a function of deposition temperature. Drastic improvement of PL efficiency up to 12% is achieved when the deposition temperature is reduced from 250 °C to room temperature. Low-temperature deposition is found to result in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO2 interface sharp. The demonstration of the superior structural and optical properties of the films represents an important step towards the development of silicon-based light emitters. © 2002 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.66.Db Elemental semiconductors and insulators
61.46.-w Structure of nanoscale materials
81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
81.40.Gh Other heat and thermomechanical treatments
81.40.Tv Optical and dielectric properties related to treatment conditions
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