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25 Nov 2002

Volume 81, Issue 22, pp. 4103-4293

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Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

Tae-Ho Cha, Dae-Gyu Park, Tae-Kyun Kim, Se-Aug Jang, In-Seok Yeo, Jae-Sung Roh, and Jin Won Park

Appl. Phys. Lett. 81, 4192 (2002); http://dx.doi.org/10.1063/1.1523651 (3 pages) | Cited 16 times

Online Publication Date: 19 November 2002

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Work function and thermal stability of reactive sputtered Ti1−xAlxNy films were investigated for a metal gate electrode using a metal–oxide–semiconductor (MOS) structure. It is found that the work function (ΦM) values of Ti1−xAlxNy are ranged from 4.36 to 5.13 eV with a nitrogen partial flow rate (fN2). The ΦM values of Ti1−xAlxNy films, 4.36 eV for nMOS (n-Ti1−xAlxNy) and 5.10–5.13 eV for pMOS (p-Ti1−xAlxNy), may be applicable to dual metal gate electrodes. Excellent thermal stability up to 1000 °C was obtained on SiO2 as observed by the negligible change of capacitance equivalent thickness and Al 2p core level spectra for p-Ti1−xAlxNy (y ∼ 1.0,fN2 = 50%), whereas a limited stability was attained in case of n-Ti1−xAlxNy (fN2 ⩽ 40%). The p-Ti1−xAlxNy can be a good candidate for pMOS device feasibility because of good thermal stability, while the n-Ti1−xAlxNy may be applicable for nMOS gate electrode in low thermal devices using damascene gate process. © 2002 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
68.60.Dv Thermal stability; thermal effects
73.61.At Metal and metallic alloys
84.32.Tt Capacitors
85.30.Tv Field effect devices

Investigation of localized states in cadmium zinc telluride crystals by scanning photodielectric spectroscopy

V. K. Komar, V. P. Migal, O. N. Chugai, V. M. Puzikov, D. P. Nalivaiko, and N. N. Grebenyuk

Appl. Phys. Lett. 81, 4195 (2002); http://dx.doi.org/10.1063/1.1525883 (3 pages) | Cited 4 times

Online Publication Date: 19 November 2002

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A method of scanning photodielectric spectroscopy of crystals has been suggested. It is based on the measurements of small increments of the real Δϵ′ and imaginary Δϵ″ parts of effective dielectric permittivity at a smooth variation of the photoexcitation wavelength λ. The spectral functions Δϵ′(λ) and Δϵ″(λ) are presented in a complex plane, that is, in parametric view, and their characteristic points are determined. Application of this method on Cd1−xZnxTe crystals showed a possibility of determining the energy position of the localized states generated in the forbidden zone by the intrinsic structure defects. © 2002 American Institute of Physics.
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71.55.Gs II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds
77.22.Ch Permittivity (dielectric function)
72.80.Ey III-V and II-VI semiconductors

Resonant interband tunneling spin filter

David Z.-Y. Ting and Xavier Cartoixà

Appl. Phys. Lett. 81, 4198 (2002); http://dx.doi.org/10.1063/1.1524700 (3 pages) | Cited 28 times

Online Publication Date: 19 November 2002

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We propose an InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode as a spin filter. The interband design exploits large valence band spin–orbit interaction to provide strong spin selectivity, without suffering from fast hole spin relaxation. Spin filtering efficiency is also enhanced by the reduction of tunneling through quasibound states near the zone center, where spin spitting vanishes and spin selectivity is difficult. Our calculations show that, when coupled with an emitter or collector capable of lateral momentum selectivity, the asymmetric resonant interband tunneling diode can achieve significant spin filtering in conventional nonmagnetic semiconductor heterostructures under zero magnetic field. © 2002 American Institute of Physics.
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85.75.Mm Spin polarized resonant tunnel junctions
85.30.Kk Junction diodes
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
72.25.Mk Spin transport through interfaces

On the effects of implantation temperature in helium implanted silicon

E. Oliviero, M. L. David, M. F. Beaufort, J. F. Barbot, and A. van Veen

Appl. Phys. Lett. 81, 4201 (2002); http://dx.doi.org/10.1063/1.1525059 (3 pages) | Cited 5 times

Online Publication Date: 19 November 2002

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He+ ions were implanted into silicon with a fluence of 5×1016 cm−2 at different temperatures ranging from 473 to 1073 K. Samples were analyzed by thermal helium desorption spectroscopy and by transmission electron microscopy. As far as cavity formation is concerned, the behavior can be divided into three stages depending on the implantation temperature. However, it is found that helium release from cavities is governed by a single mechanism regardless of the implantation temperature. © 2002 American Institute of Physics.
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61.72.uf Ge and Si
81.05.Cy Elemental semiconductors
61.80.Jh Ion radiation effects
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.82.Fk Semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.43.Vx Thermal desorption
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