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Applied Physics Letters / Volume 81 / Issue 23 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 81, 4380 (2002); http://dx.doi.org/10.1063/1.1526915 (3 pages)

Size effects on generation-recombination noise

G. Gomila1 and L. Reggiani2

1Centre de Recerca en Bioelectrònica i Nanobiociència and Departament d’Electrònica-Universitat de Barcelona, Laboratori de Nanobioingenyieria, Parc Científic de Barcelona, C/Josep Samitier 1-5, E-08028 Barcelona, Spain
2INFM-National Nanotechnology Laboratory and Dipartimento di Ingegneria dell’Innovazione, Università di Lecce, Via Arnesano s/n, I-73100 Lecce, Italy

(Received 29 July 2002; accepted 9 October 2002)

We carry out an analytical theory of generation-recombination noise for a two-level resistor model which goes beyond those presently available by including the effects of both space charge fluctuations and diffusion current. Finite size effects are found responsible for the saturation of the low frequency current spectral density at high enough applied voltages. The saturation behavior is controlled essentially by the correlations coming from the long range Coulomb interaction. It is suggested that the saturation of the current fluctuations for high voltage bias constitutes a general feature of generation-recombination noise. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier lifetime, current fluctuations, size effect, space-charge-limited conduction, semiconductor device noise, semiconductor-metal boundaries, ohmic contacts

PACS

  • 72.70.+m

    Noise processes and phenomena

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 73.40.Ns

    Metal-nonmetal contacts

  • 72.30.+q

    High-frequency effects; plasma effects

  • 72.20.Ht

    High-field and nonlinear effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1526915

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    K. M. van Vliet, A. Friedmann, R. J. J. Ziljstra, A. Gisoft, and A. van der Ziel, J. Appl. Phys. 46, 1814 (1975)JAPIAU000046000004001814000001.

    G. Gomila, O. M. Bulashenko, and J. M. Rubí, J. Appl. Phys. 83, 2619 (1998)JAPIAU000083000005002619000001.

    A similar study for the case of diffusion noise can be found in: G. Gomila and L. Reggiani, Phys. Rev. B 62, 8068 (2000).


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