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2 Dec 2002

Volume 81, Issue 23, pp. 4315-4476

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Surface passivation of n-type crystalline Si by plasma-enhanced-chemical-vapor-deposited amorphous SiCx:H and amorphous SiCxNy:H films

I. Martín, M. Vetter, A. Orpella, C. Voz, J. Puigdollers, and R. Alcubilla

Appl. Phys. Lett. 81, 4461 (2002); http://dx.doi.org/10.1063/1.1527230 (3 pages) | Cited 20 times

Online Publication Date: 25 November 2002

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Excellent passivation of n-type crystalline silicon surface is demonstrated by means of intrinsic amorphous silicon carbide (a-SiCx:H) thin films. An optimum CH4/SiH4 ratio is determined, leading to an effective surface recombination velocity, Seff, lower than 54 cm s−1. By adding a constant flow of N2 to the precursor gases, the surface passivation is improved to Seff ⩽ 16 cm s−1. From infrared spectroscopy measurements of these films, it can be deduced that the N2 flow increases the carbon content of the layers for a constant CH4/SiH4 ratio. The dependence of the effective lifetime, τeff, on the excess charge carrier density, Δn, is measured using the quasisteady-state photoconductance technique, and these curves are simulated through an electrical model based on an insulator/semiconductor structure. © 2002 American Institute of Physics.
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81.65.Rv Passivation
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
84.60.Jt Photoelectric conversion
73.50.Pz Photoconduction and photovoltaic effects
78.66.Jg Amorphous semiconductors; glasses
78.35.+c Brillouin and Rayleigh scattering; other light scattering
82.80.Dx Analytical methods involving electronic spectroscopy

Effect of charge transport through silicon nitride on thin gate oxide reliability

A. Cacciato, A. Scarpa, S. Evseev, and M. Diekema

Appl. Phys. Lett. 81, 4464 (2002); http://dx.doi.org/10.1063/1.1526456 (3 pages) | Cited 4 times

Online Publication Date: 25 November 2002

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It is shown that photoconduction is triggered in silicon nitride films when they are exposed to plasma. As a consequence of the increased conductivity, they can act as antennas, being able to collect charges from unstable plasmas and inject them into the gate oxide, thus causing charging damage. The importance of this phenomenon for deep submicron microelectronic manufacturing is discussed. © 2002 American Institute of Physics.
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85.30.Tv Field effect devices
81.65.Cf Surface cleaning, etching, patterning
73.50.Pz Photoconduction and photovoltaic effects

Performance of an x-ray microcalorimeter under ac biasing

J. van der Kuur, P. A. J. de Korte, H. F. C. Hoevers, M. Kiviranta, and H. Seppä

Appl. Phys. Lett. 81, 4467 (2002); http://dx.doi.org/10.1063/1.1526168 (3 pages) | Cited 4 times

Online Publication Date: 25 November 2002

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Frequency domain multiplexing (FDM) is an attractive option for the readout of imaging arrays of microcalorimeters. Implementation of FDM requires ac biasing of the individual microcalorimeters. In this letter we present a small signal model for the behavior of a microcalorimeter under ac bias. Moreover, we have measured the behavior of the same microcalorimeter under ac (at 46 kHz) and dc bias. These experiments show that the performance of the device is very similar in terms of energy resolution, pulse shapes, and current–voltage characteristics. The measured energy resolution at 5.89 keV is 6.9 eV for ac bias and 5.5 eV for dc bias. The effective time constant in both cases is 100 μs. © 2002 American Institute of Physics.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
29.40.Vj Calorimeters
29.30.Kv X- and γ-ray spectroscopy
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