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9 Dec 2002

Volume 81, Issue 24, pp. 4499-4663

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Cooling-rate-dependent dielectric properties of (Pb(Mg1/3Nb2/3)O3)0.67(PbTiO3)0.33 single crystals in ferroelectric phase

Feng Yan, Peng Bao, Yening Wang, Helen L. W. Chan, and Chung Loong Choy

Appl. Phys. Lett. 81, 4580 (2002); http://dx.doi.org/10.1063/1.1527701 (3 pages) | Cited 3 times

Online Publication Date: 3 December 2002

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The dielectric properties of (Pb(Mg1/3Nb2/3)O3)0.67(PbTiO3)0.33 single crystals in the temperature range from room temperature to 250 °C have been studied. A very sharp change of dielectric permittivity due to the spontaneous relaxor–ferroelectric phase transition was observed. The most interesting result is that the dielectric permittivity in ferroelectric phase is strongly dependent on the cooling rate across the relaxor–ferroelectric phase transition. We assume that the cooling rate can influence the grain size of ferroelectric subdomains in ferroelectric phase and can therefore influence the dielectric properties. © 2002 American Institute of Physics.
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77.22.Ch Permittivity (dielectric function)
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis

Electrical properties of SrBi2Ta2O9 ferroelectric thin films at low temperature

Pingxiong Yang, David L. Carroll, John Ballato, and Robert W. Schwartz

Appl. Phys. Lett. 81, 4583 (2002); http://dx.doi.org/10.1063/1.1527700 (3 pages) | Cited 24 times

Online Publication Date: 3 December 2002

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The temperature dependence of electrical properties for SrBi2Ta2O9 thin film capacitors with platinum electrodes (Pt/SBT/Pt) on silicon wafers was studied from 10 to 300 K. With a decrease in temperature from 300 to 200 K, the remanent polarization of the thin films shows about an 11% reduction from its 300 K value; however, it is reduced by about 87% reduction from its 200 K value when the temperature drops from 200 to 100 K. With a decrease to 200 K, the polarization fatigue was significant, and the capacitor shows an approximate 29% reduction in polarization from its initial value following 1010 cycles. The dielectric response and leakage current of the thin films were also studied over the same lower temperature region. These results are helpful in the understanding of the fatigue-free behavior observed in SrBi2Ta2O9 thin films at room temperature and provide additional insight into their use for ferroelectric memory applications. © 2002 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
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