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9 Dec 2002

Volume 81, Issue 24, pp. 4499-4663

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Damp-heat induced sulfate formation in Cu(In,Ga)(S,Se)2-based thin film solar cells

C. Heske, U. Groh, L. Weinhardt, O. Fuchs, B. Holder, E. Umbach, C. Bostedt, L. J. Terminello, S. Zweigart, T. P. Niesen, and F. Karg

Appl. Phys. Lett. 81, 4550 (2002); http://dx.doi.org/10.1063/1.1525884 (3 pages) | Cited 6 times

Online Publication Date: 3 December 2002

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To investigate the impact of damp heat treatments on the electronic and chemical structure of Cu(In,Ga)(S,Se)2-based thin film solar cells, we have performed a detailed soft x-ray emission study of the ZnO/CuIn(S,Se)2 and ZnO/CdS/CuIn(S,Se)2 interfaces. By comparing the sulfur L2,3 emission spectra of pristine and damp-heat treated samples, we find a sulfate formation at the ZnO/CuIn(S,Se)2 and the ZnO/CdS interface. The intensity behavior as a function of ZnO film thickness further reveals a diffusion of sulfur atoms into the ZnO film, leading to the formation of zinc sulfate in the ZnO window layer of damp-heat-treated Cu(In,Ga)(S,Se)2-based solar cells. © 2002 American Institute of Physics.
Show PACS
84.60.Jt Photoelectric conversion
73.61.Le Other inorganic semiconductors
78.70.En X-ray emission spectra and fluorescence
78.66.Li Other semiconductors
81.40.Gh Other heat and thermomechanical treatments

Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

M. Eddrief, M. Marangolo, S. Corlevi, G.-M. Guichar, V. H. Etgens, R. Mattana, D. H. Mosca, and F. Sirotti

Appl. Phys. Lett. 81, 4553 (2002); http://dx.doi.org/10.1063/1.1526170 (3 pages) | Cited 13 times

Online Publication Date: 3 December 2002

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We present the Schottky-barrier height determination for the Fe/ZnSe(001) system performed by core and valence level photoelectron emission spectroscopy. Above the thickness of 2 ML, the Fe–Fermi level position is stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. This corresponds to a Schottky-barrier height value of 1.1 eV. A bulk-like d-band electronic structure could be observed for thickness as thin as 2 ML of Fe. © 2002 American Institute of Physics.
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79.60.Jv Interfaces; heterostructures; nanostructures
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.20.At Surface states, band structure, electron density of states

I-Line lithography of poly-(3,4-ethylenedioxythiophene) electrodes and application in all-polymer integrated circuits

F. J. Touwslager, N. P. Willard, and D. M. de Leeuw

Appl. Phys. Lett. 81, 4556 (2002); http://dx.doi.org/10.1063/1.1524031 (3 pages) | Cited 18 times

Online Publication Date: 3 December 2002

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Industrialization of polymer electronics requires the use of safe solvents. To that end an I-line lithography process for conducting thin poly(3,4-ethylenedioxythiophene) films has been developed. The fully waterborne process is based on photocrosslinking using bisazide- and polyazide-type photoinitiators. The minimum feature size realized comprises 2.5 μm wide lines separated by 1 μm spacings. The sheet resistance is 1 kΩ/square. The process has been applied to fabricate all-polymer integrated circuits. The technology is demonstrated with functional 15-bit code generators. © 2002 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
85.65.+h Molecular electronic devices
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
82.35.Cd Conducting polymers
82.50.-m Photochemistry
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