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23 Dec 2002

Volume 81, Issue 26, pp. 4895-5074

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Reversible adsorption-enhanced quantum confinement in semiconductor quantum dots

Shaibal K. Sarkar, Nirmala Chandrasekharan, Sasha Gorer, and Gary Hodes

Appl. Phys. Lett. 81, 5045 (2002); http://dx.doi.org/10.1063/1.1532109 (3 pages) | Cited 17 times

Online Publication Date: 17 December 2002

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Semiconductor quantum dots possess two important properties: Size-dependent increase in band gap (size quantization) and a very high surface-to-volume ratio. We show that cyanide adsorption on this high surface further increases the size quantization in films of CdSe and CdS quantum dots and that removal of the cyanide reverses this effect. This effect is explained by increased localization due to compression of the electron wave function in the dots by the strongly adsorbed [on both Cd and Se(S)] negatively charged cyanide. © 2002 American Institute of Physics.
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73.21.La Quantum dots
81.07.Ta Quantum dots
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
78.67.Hc Quantum dots

Field emission from MoO3 nanobelts

Y. B. Li, Y. Bando, D. Golberg, and K. Kurashima

Appl. Phys. Lett. 81, 5048 (2002); http://dx.doi.org/10.1063/1.1532104 (3 pages) | Cited 98 times

Online Publication Date: 17 December 2002

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Single-crystalline MoO3 nanobelts having an orthorhombic structure were prepared on a Si wafer via heating a Mo foil in air. The nanobelts were 50–300 nm wide and tens of nanometers thick. The nanobelt lengths lie in the [001] direction. Field-emission measurements showed that the threshold field decreased with the anode–sample separation increasing. Typically, a threshold field of 12.9 V/μm was determined at a spacing of 80 μm. The nanobelts exhibited a sharp increase in emission current density near the threshold field and, thus, reached a high current density at a relatively low field. Emission from both sharp corners and edges of the nanobelts is assumed to contribute to the high emission current. The high-current emission paired with high stability indicates that the prepared MoO3 nanobelt films are excellent field emitters. © 2002 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.16.-c Methods of micro- and nanofabrication and processing
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.A- Nucleation and growth

GaN nanorods coated with pure BN

Wei-Qiang Han and A. Zettl

Appl. Phys. Lett. 81, 5051 (2002); http://dx.doi.org/10.1063/1.1531836 (3 pages) | Cited 29 times

Online Publication Date: 17 December 2002

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We report a method to efficiently synthesize gallium nitride (GaN) nanorods coated with insulating boron nitride (BN) layers. The GaN core is crystalline (with either a cubic zincblende or hexagonal wurtzite structure) and has diameters ranging from 10 to 85 nm and lengths up to 60 μm. The outer encapsulating BN shells with typical thicknesses less than 5 nm extend fully over, and adhere well to, the entire nanorod surface. © 2002 American Institute of Physics.
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81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
81.16.Be Chemical synthesis methods
81.16.Hc Catalytic methods

Charge injection in individual silicon nanoparticles deposited on a conductive substrate

T. Mélin, D. Deresmes, and D. Stiévenard

Appl. Phys. Lett. 81, 5054 (2002); http://dx.doi.org/10.1063/1.1532110 (3 pages) | Cited 27 times

Online Publication Date: 17 December 2002

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We report on charge injection in individual silicon nanoparticles deposited on conductive substrates. Charges are injected using a metal-plated atomic force microscope tip, and detected by electric force microscopy (EFM). Due to the screening efficiency of the conductive substrate, up to ∼200 positive or negative charges can be stored at moderate (<10 V) tip–substrate injection voltage in ∼40 nm high nanoparticles, with discharging time constants of a few minutes. We propose an analytical model in the plane-capacitor approximation to estimate the nanoparticle charge from EFM data. It falls in quantitative agreement with numerical calculations using realistic tip/nanoparticle/substrate geometries. © 2002 American Institute of Physics.
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73.40.-c Electronic transport in interface structures
85.35.-p Nanoelectronic devices
73.63.Bd Nanocrystalline materials
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Direct imaging of the depletion region of an InP p–n junction under bias using scanning voltage microscopy

D. Ban, E. H. Sargent, St. J. Dixon-Warren, I. Calder, A. J. SpringThorpe, R. Dworschak, G. Este, and J. K. White

Appl. Phys. Lett. 81, 5057 (2002); http://dx.doi.org/10.1063/1.1528277 (3 pages) | Cited 13 times

Online Publication Date: 17 December 2002

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We directly image an InP p–n junction depletion region under both forward and reverse bias using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique. The SVM results are compared to those obtained with scanning spreading resistance microscopy (SSRM) measurements under zero bias on the same sample. The SVM and SSRM data are shown to agree with the results of semiclassical calculations. The physical basis of the SVM measurement process is also discussed, and we show that the measured voltage is determined by the changes in the electrostatic potential and the carrier concentration at the SVM tip with and without the applied bias. © 2002 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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Observations of pressure-wave-excited contrast agent bubbles in the vicinity of cells

B. Wolfrum, R. Mettin, T. Kurz, and W. Lauterborn

Appl. Phys. Lett. 81, 5060 (2002); http://dx.doi.org/10.1063/1.1531225 (3 pages) | Cited 24 times

Online Publication Date: 17 December 2002

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Levovist contrast agent bubble dynamics after spark-induced pressure wave exposure is investigated in the vicinity of normal rat kidney fibroblast cells. The bubble dynamics is calculated using the Keller–Miksis model and results are compared with the experimental radius time curves. High-speed microscopic images show rapid bubble expansion and collapse. Even at moderate peak negative pressure amplitudes of less than 2 MPa the contrast agent bubbles have been observed to expand to more than 30 times their original radius and to rupture cells upon collapse. © 2002 American Institute of Physics.
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87.50.Y- Biological effects of acoustic and ultrasonic energy
43.80.Gx Mechanisms of action of acoustic energy on biological systems: physical processes, sites of action

Realization of hollow SiO2 micronozzles for electrical measurements on living cells

T. Lehnert, M. A. M. Gijs, R. Netzer, and U. Bischoff

Appl. Phys. Lett. 81, 5063 (2002); http://dx.doi.org/10.1063/1.1528292 (3 pages) | Cited 34 times

Online Publication Date: 17 December 2002

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We present a microfluidic device for the immobilization and electrical measurements, such as patch-clamp or impedance measurements, on individual living cells. Micron-sized hollow SiO2 nozzles are realized in Si wafers using a deep plasma etching process. The micronozzles are integrated with glass wafers containing microfluidic channels and Ag/AgCl electrodes. Reliable cell positioning on the nozzles via hydrodynamic forces is obtained. Relevant electrical parameters of the system, especially seal resistances between attached cells and the nozzle, are determined. © 2002 American Institute of Physics.
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87.80.Fe Micromanipulation of biological structures
87.80.Jg Patch clamping and other physiological measurements
87.85.Va Micromachining
87.17.-d Cell processes
47.60.-i Flow phenomena in quasi-one-dimensional systems
47.85.Np Fluidics
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
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Hundred-micron-sized all-solid-state Li secondary battery arrays embedded in a Si substrate

K. Kushida, K. Kuriyama, and T. Nozaki

Appl. Phys. Lett. 81, 5066 (2002); http://dx.doi.org/10.1063/1.1531220 (3 pages) | Cited 14 times

Online Publication Date: 17 December 2002

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Fabrication and charge/discharge behaviors of all-solid-state Li secondary battery arrays embedded into three Si trenches of 200×100 μm2 in area and 0.5 ∼ 2.0 μm in depth are presented. The battery arrays in a Si wafer, consisting of multiple layers (Al current collector/Li/SiO2–15 at. %P2O5/LiMn2O4/polycrystalline silicon current collector), are prepared by combining a sol-gel spin-coating method and Si very-large-scale integration technologies. Porous spin-on glass (SiO2–15 at. %P2O5) is adopted as an electrolyte layer, in which spatial paths for Li+ ions are artificially introduced into the glass. Each active battery area is isolated with double insulating walls (Si3N4/SiO2). The battery arrays demonstrate a constant capacity of ∼ 9.2 μA h cm−2 at ∼ 3.6 V up to 100 cycles. © 2002 American Institute of Physics.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
84.30.Jc Power electronics; power supply circuits

Miniaturized, highly sensitive single-chip multichannel quartz-crystal microbalance

Vu Ngoc Hung, Takashi Abe, Phan Ngoc Minh, and Masayoshi Esashi

Appl. Phys. Lett. 81, 5069 (2002); http://dx.doi.org/10.1063/1.1532750 (3 pages) | Cited 8 times

Online Publication Date: 17 December 2002

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A miniaturized highly sensitive single-chip multichannel quartz-crystal microbalance prepared by deep reactive ion etching is presented. In the present work, quartz resonators in a single-chip with the diameters in the range 0.05–1.0 mm and thicknesses in the range 18–82 μm were fabricated. The conductance measurements carried out on the resonators showed that the Q factor is inversely proportional to resonator thickness. The Q-factor value as high as ∼30 000 has been observed in case of a 94 MHz resonator whose diameter is 1 mm and the thickness 17.8 μm. The Q factor of a resonator of very small diameter (0.1 mm) reached the value 5700. © 2002 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
77.65.Fs Electromechanical resonance; quartz resonators
07.10.Lw Balance systems, tensile machines, etc.
06.30.Dr Mass and density
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.65.Cf Surface cleaning, etching, patterning

Easily monitored entangled state

M. A. Can, A. A. Klyachko, and A. S. Shumovsky

Appl. Phys. Lett. 81, 5072 (2002); http://dx.doi.org/10.1063/1.1521262 (3 pages) | Cited 7 times

Online Publication Date: 17 December 2002

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We discuss the generation and monitoring of durable atomic entangled state via Raman-type process, which can be used in the quantum information processing. © 2002 American Institute of Physics.
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03.67.-a Quantum information
42.50.-p Quantum optics
32.30.Bv Radio-frequency, microwave, and infrared spectra
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