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23 Dec 2002

Volume 81, Issue 26, pp. 4895-5074

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Direct imaging of the depletion region of an InP p–n junction under bias using scanning voltage microscopy

D. Ban, E. H. Sargent, St. J. Dixon-Warren, I. Calder, A. J. SpringThorpe, R. Dworschak, G. Este, and J. K. White

Appl. Phys. Lett. 81, 5057 (2002); http://dx.doi.org/10.1063/1.1528277 (3 pages) | Cited 13 times

Online Publication Date: 17 December 2002

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We directly image an InP p–n junction depletion region under both forward and reverse bias using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique. The SVM results are compared to those obtained with scanning spreading resistance microscopy (SSRM) measurements under zero bias on the same sample. The SVM and SSRM data are shown to agree with the results of semiclassical calculations. The physical basis of the SVM measurement process is also discussed, and we show that the measured voltage is determined by the changes in the electrostatic potential and the carrier concentration at the SVM tip with and without the applied bias. © 2002 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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