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23 Dec 2002

Volume 81, Issue 26, pp. 4895-5074

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Millisecond minority carrier lifetimes in n-type multicrystalline silicon

Andres Cuevas, Mark J. Kerr, Christian Samundsett, Francesca Ferrazza, and Gianluca Coletti

Appl. Phys. Lett. 81, 4952 (2002); http://dx.doi.org/10.1063/1.1529089 (3 pages) | Cited 14 times

Online Publication Date: 17 December 2002

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Exceptionally high minority carrier lifetimes have been measured in n-type multicrystalline silicon (mc-Si) grown by directional solidification and subjected to phosphorus gettering. The highest effective lifetimes, up to 1.6 ms averaged over several grains and 2.8 ms within some of them, were measured for relatively lowly doped, 2–3 Ωcm, wafers. The lifetime was found to decrease for lower resistivities, still reaching 500 μs for 0.9 Ωcm and 100 μs for 0.36 Ωcm. Several important findings are reported here: (i) achievement of carrier lifetimes in the millisecond range for mc-Si, (ii) effectiveness of phosphorus gettering in n-type mc-Si, and (iii) demonstration of good stability under illumination for n-type mc-Si. © 2002 American Institute of Physics.
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72.80.Cw Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
81.30.Fb Solidification
61.72.Yx Interaction between different crystal defects; gettering effect

Metal–insulator–metal transition in Sr2Rh1−xRuxO4(0 ⩽ x ⩽ 1)

T. Koida, T. Wakisaka, K. Itaka, H. Koinuma, and Y. Matsumoto

Appl. Phys. Lett. 81, 4955 (2002); http://dx.doi.org/10.1063/1.1530372 (3 pages) | Cited 4 times

Online Publication Date: 17 December 2002

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Structural and electrical properties of c-axis oriented epitaxial Sr2Rh1−xRuxO4 (0 ⩽ x ⩽ 1) films were systematically investigated. The composition-spread films were fabricated on a temperature gradient (LaAlO3)0.3(Sr2AlTaO6)0.7 substrate to quickly optimize the growth temperature for a high-quality crystalline film having each composition (x). An anomalous c-axis length dependence on x was observed, and it was accompanied by a distinct change in electric property, that is, a metal–insulator–metal transition. © 2002 American Institute of Physics.
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71.30.+h Metal-insulator transitions and other electronic transitions
74.70.Pq Ruthenates
72.60.+g Mixed conductivity and conductivity transitions
81.15.Fg Pulsed laser ablation deposition

Low-dose n-type nitrogen implants in 4H-SiC

N. S. Saks, S.-H. Ryu, and A. V. Suvorov

Appl. Phys. Lett. 81, 4958 (2002); http://dx.doi.org/10.1063/1.1531838 (3 pages) | Cited 6 times

Online Publication Date: 17 December 2002

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Lightly-doped n-type layers have been fabricated in 4H-SiC by low-dose implantation of nitrogen ions and characterized using the Hall effect. Near-bulk electron mobility is achieved in the implanted layers. Activation rates for the implanted nitrogen ions, energies and densities of the two-level nitrogen donor, and compensation are found from fitting the measured Hall free-electron density to a charge neutrality model as a function of temperature. Measured nitrogen activation rates are 55% and 71% for 1300 and 1600 °C anneal temperatures, respectively. Compensation due to unannealed implant damage is 32% and 17% of the implant dose for 1300 and 1600 °C anneal temperatures, respectively. © 2002 American Institute of Physics.
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61.72.up Other materials
72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Jc Other crystalline inorganic semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ee Mobility edges; hopping transport
61.72.Cc Kinetics of defect formation and annealing

AlGaN layers grown on GaN using strain-relief interlayers

C. Q. Chen, J. P. Zhang, M. E. Gaevski, H. M. Wang, W. H. Sun, R. S. Q. Fareed, J. W. Yang, and M. Asif Khan

Appl. Phys. Lett. 81, 4961 (2002); http://dx.doi.org/10.1063/1.1531219 (3 pages) | Cited 14 times

Online Publication Date: 17 December 2002

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We report on a study to compare the growth of thick AlGaN layers on GaN with different strain-relief interlayers. A set of ten period AlN/AlGaN superlattices was found to be the most efficient approach for the strain relief. The superlattice interlayer not only decreases the tensile strain but also improves the crystal structural quality. Thus, 2-μm-thick, high quality n+-Al0.2Ga0.8N layers can be grown on GaN epilayers without any cracks. © 2002 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.65.Cd Superlattices

Measuring the energetic distribution of ballistic electrons after their refraction at an Au–GaAs interface

D. Rakoczy, G. Strasser, and J. Smoliner

Appl. Phys. Lett. 81, 4964 (2002); http://dx.doi.org/10.1063/1.1532751 (3 pages) | Cited 2 times

Online Publication Date: 17 December 2002

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In this work, ballistic electron emission microscopy/spectroscopy on biased GaAs–AlAs double-barrier resonant tunneling structures is used to study the energetic distribution of ballistic electrons transmitted through an Au–GaAs interface. Measuring the ballistic current as a function of collector bias, we observe a surprisingly broad energetic distribution of ballistic electrons in the GaAs. This observation can be explained by electron “refraction” effects at the Au–GaAs interface and the influence of inelastic scattering in the drift region of the sample. © 2002 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
68.37.Vj Field emission and field-ion microscopy
73.23.Ad Ballistic transport
73.23.Hk Coulomb blockade; single-electron tunneling

Impact of organic contamination on the electrical properties of hydrogen-terminated silicon under ambient conditions

Yong-Jun Liu, Damien M. Waugh, and Hua-Zhong Yu

Appl. Phys. Lett. 81, 4967 (2002); http://dx.doi.org/10.1063/1.1532758 (3 pages) | Cited 5 times

Online Publication Date: 17 December 2002

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The electrical properties of hydrogen-terminated silicon (H–Si) surfaces were investigated by the assembly and testing of reliable and reproducible mercury–silicon junctions. When a H–Si surface is exposed to air under ambient conditions, the current density–bias voltage curve of the thus formed mercury–silicon junction initially maintains ohmic characteristics for a period of 8–12 h and then evolves to diode behavior. The current density substantially decreases, but can be recovered to a certain extent upon sonication in organic solvents. In agreement with infrared spectroscopic results, organic contamination of H–Si is suggested to play an important role in the transition of the electrical properties. © 2002 American Institute of Physics.
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73.25.+i Surface conductivity and carrier phenomena
73.61.Cw Elemental semiconductors
72.80.Cw Elemental semiconductors
68.35.Dv Composition, segregation; defects and impurities
81.65.-b Surface treatments

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

M. A. Reshchikov, H. Morkoç, S. S. Park, and K. Y. Lee

Appl. Phys. Lett. 81, 4970 (2002); http://dx.doi.org/10.1063/1.1531227 (3 pages) | Cited 29 times

Online Publication Date: 17 December 2002

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Photoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied over a wide range of excitation intensities. A yellow luminescence (YL) band at about 2.2 eV saturates with increasing excitation intensity, whereas a green luminescence (GL) band at about 2.5 eV increases as a square of the excitation intensity. The YL and GL bands are attributed to two charge states of the same defect, presumably a gallium vacancy-oxygen complex. © 2002 American Institute of Physics.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors
78.40.Fy Semiconductors

Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions

J. Yang and F. C. J. Kong

Appl. Phys. Lett. 81, 4973 (2002); http://dx.doi.org/10.1063/1.1532547 (3 pages) | Cited 14 times

Online Publication Date: 17 December 2002

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A two-dimensional numerical simulation model of interface states in scanning capacitance microscopy (SCM) measurements of p–n junctions is presented. In the model, amphoteric interface states with two transition energies in the Si band gap are represented as fixed charges to account for their behavior in SCM measurements. The interface states are shown to cause a stretch-out and a parallel shift of the capacitance–voltage characteristics in the depletion and neutral regions of p–n junctions, respectively. This explains the discrepancy between the SCM measurement and simulation near p–n junctions, and thus modeling interface states is crucial for SCM dopant profiling of p–n junctions. © 2002 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
07.79.-v Scanning probe microscopes and components
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
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