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30 Dec 2002

Volume 81, Issue 27, pp. 5099-5257

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Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

D. P. Chu, Z. G. Zhang, P. Migliorato, B. M. McGregor, K. Ohashi, K. Hasegawa, and T. Shimoda

Appl. Phys. Lett. 81, 5204 (2002); http://dx.doi.org/10.1063/1.1532548 (3 pages) | Cited 9 times

Online Publication Date: 19 December 2002

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We have developed a method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in a ferroelectric thin film. The NIR thickness and the CBR resistivity can thus be accurately determined. Using lanthanum-doped lead zirconate titanate films as an example, we show that the total thickness of the NIRs depends only on the electrode materials in use (Ir and Pt), while the CBR resistivity depends only on the impurity doping levels (La = 1.5% and 3%). The fact that the NIR is much narrower when Pt electrodes are used instead of Ir, and that the NIR resistivity is always considerably lower than the central bulk, suggest that the NIRs is probably originated from material nonstoichiometry/defects rather than the band bending at metal/insulator interfaces. © 2002 American Institute of Physics.
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85.50.Gk Non-volatile ferroelectric memories
77.55.-g Dielectric thin films
73.40.Rw Metal-insulator-metal structures
77.80.-e Ferroelectricity and antiferroelectricity

Study of ferroelectricity and current–voltage characteristics of CdZnTe

D. J. Fu, J. C. Lee, S. W. Choi, S. J. Lee, T. W. Kang, M. S. Jang, H. I. Lee, and Y. D. Woo

Appl. Phys. Lett. 81, 5207 (2002); http://dx.doi.org/10.1063/1.1530744 (3 pages) | Cited 16 times

Online Publication Date: 19 December 2002

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CdZnTe has been characterized by means of polarization-field hysteresis and current–voltage measurements. The CdZnTe is shown to be ferroelectric with polarization endurance up to 107 poling cycles. The polarization is significantly influenced by free carriers and can be switched by light illumination. The capacitance of CdZnTe consists of ferroelectric and depletion components. On the other hand, electrical conduction in the CdZnTe is modulated by the polarization, leading to hysteresis in the current–voltage characteristics. Writing and reading measurement has shown a reading-current difference of 0.015 mA at a nondestructive voltage for the binary digits. © 2002 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
72.20.Fr Low-field transport and mobility; piezoresistance
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
81.05.Dz II-VI semiconductors
72.80.Ey III-V and II-VI semiconductors
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena

Mitigation of transverse domain growth in two-dimensional polarization switching of lithium niobate

L.-H. Peng, Y.-C. Shih, S.-M. Tsan, and C.-C. Hsu

Appl. Phys. Lett. 81, 5210 (2002); http://dx.doi.org/10.1063/1.1533115 (3 pages) | Cited 8 times

Online Publication Date: 19 December 2002

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This letter reports a charge control mechanism to mitigate the growth of transverse domain in the two-dimensional periodical polarization switching of Z-cut congruent-grown lithium niobate. This mechanism is established in a two-step procedure consisting of a first high temperature treatment followed by pulsed field poling. The ferroelectric χ(2) nonlinear photonic crystal thus formed exhibits a domain size as small as 3.3 μm and can emit an array of second harmonic green lasers when pumped by a Nd:yttritium–aluminum–garnet laser. These observations are ascribed to the (i) selective 180° domain nucleation underneath the oxidized electrode, and (ii) confinement of transverse domain motion to the positively charged boundary formed by the heat treatment. © 2002 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.70.Qs Photonic bandgap materials
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