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15 Jul 2002

Volume 81, Issue 3, pp. 391-566

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Characterizing an implanted Si/Si p–n junction with lower doping level by combined electron holography and focused-ion-beam milling

Zhouguang Wang, Takeharu Kato, Noriyoshi Shibata, Tsukasa Hirayama, Naoko Kato, Katsuhiro Sasaki, and Hiroyasu Saka

Appl. Phys. Lett. 81, 478 (2002); http://dx.doi.org/10.1063/1.1491606 (3 pages) | Cited 9 times

Online Publication Date: 2 July 2002

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A Si/Si p–n junction with very low doping level was made via a standard device fabrication process by implanting As ions at 25 keV into a p-type Si substrate with a boron concentration of 1015 cm−3, followed by heat annealing at 1035 °C for 33 s. To characterize this junction, a pair of 45° wedge-shape cross sections was prepared simultaneously by focused-ion-beam milling and examined using off-axis electron holography. The reconstructed phase images clearly show the phase shift induced by the electrostatic potential drop across the p–n junction, indicating that the junction has been mapped successfully. Quantitative measurements from the phase images give the potential values of 12.21±0.40 and 11.50±0.27 V, respectively, for the n- and p-type sides of the junction, 0.71±0.05 V for the potential drop across the junction and 50.10±3.88 nm for the total electric dead layer thickness. This work demonstrates that electron holography is a powerful technique for characterizing low dopant level p–n junctions in practical devices. © 2002 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
68.55.-a Thin film structure and morphology
61.72.Cc Kinetics of defect formation and annealing
61.05.jp Electron holography

Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110)

R. Miotto and A. C. Ferraz

Appl. Phys. Lett. 81, 481 (2002); http://dx.doi.org/10.1063/1.1494456 (3 pages)

Online Publication Date: 2 July 2002

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A possible model for the ZnSe growth on GaAs(110) is proposed based on a first-principles pseudopotential method. Our calculations suggest that ZnSe growth on GaAs(110) could be understood in a two-step process: (i) Zn atoms will be adsorbed over Ga and As sites of the GaAs(110) surface, and (ii) the Zn atom over the Ga site will be replaced by a Se atom, followed by layer-by-layer ZnSe growth. We have also investigated Zn-induced features at the GaAs(110) surface, during the initial Zn interaction with the surface. Zn was found to adsorb preferentially at Ga substitutional sites at the subsurface layer and over Ga and As surface atoms. Theoretical STM images show the presence of bright features related to the Zn at Ga substitutional sites in the subsurface layers in agreement with recent experimental works. © 2002 American Institute of Physics.
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68.55.A- Nucleation and growth
68.43.Mn Adsorption kinetics
68.43.Fg Adsorbate structure (binding sites, geometry)
68.35.Md Surface thermodynamics, surface energies
71.15.Nc Total energy and cohesive energy calculations
71.15.-m Methods of electronic structure calculations
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Midinfrared pump–probe reflection spectroscopy of the coupled phonon–plasmon mode in GaN

Masaya Nagai, Kazuhiro Ohkawa, and Makoto Kuwata-Gonokami

Appl. Phys. Lett. 81, 484 (2002); http://dx.doi.org/10.1063/1.1494460 (3 pages) | Cited 4 times

Online Publication Date: 2 July 2002

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Strong photoinduced reflectivity change in the midinfrared region in GaN is observed by femtosecond pump–probe measurements. By comparing the results of simultaneous emission and reflectivity measurements, we show that midinfrared reflectivity spectra are governed by coupled phonon-plasmon modes and spatial inhomogeneity of carrier density. Even when the plasma frequency lies in the far infrared region at low carrier density of 1018 cm−3, the strong plasmon–phonon coupling drives the position of upper phonon–plasmon mode to midinfrared region, allowing us to investigate dynamics of photogenerated free carriers in GaN-based materials by midinfrared reflectivity measurements. © 2002 American Institute of Physics.
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78.66.Fd III-V semiconductors
63.20.kk Phonon interactions with other quasiparticles
78.30.Fs III-V and II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.20.-e Optical properties of bulk materials and thin films

Coalescence and electron activation energy in CdTe/ZnTe nanostructures

T. W. Kim, D. C. Choo, D. U. Lee, H. S. Lee, M. S. Jang, and H. L. Park

Appl. Phys. Lett. 81, 487 (2002); http://dx.doi.org/10.1063/1.1490634 (3 pages) | Cited 16 times

Online Publication Date: 2 July 2002

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Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the coalescence and electron activation energy in CdTe/ZnTe nanostructures. The results of the AFM images show that uniform CdTe quantum dots (QDs) are formed and that the transformation from CdTe QDs to CdTe quantum wires is caused by the coalescence. The excitonic peaks corresponding to the transition from the ground electronic subband to the ground heavy-hole band in the CdTe/ZnTe QDs shifted to higher energy in comparison with those of the CdTe/ZnTe quantum wires. The activation energy of the electrons confined in the CdTe QDs, as obtained from the temperature-dependent PL spectra, was higher than those in CdTe quantum wells and quantum wires. The present results can help to improve the understanding of coalescence and electron activation energy in CdTe/ZnTe nanostructures. © 2002 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
73.63.Kv Quantum dots
73.21.La Quantum dots
78.55.Et II-VI semiconductors
78.67.Hc Quantum dots
68.37.Ps Atomic force microscopy (AFM)
71.35.-y Excitons and related phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy

F. Renner, P. Kiesel, G. H. Döhler, M. Kneissl, C. G. Van de Walle, and N. M. Johnson

Appl. Phys. Lett. 81, 490 (2002); http://dx.doi.org/10.1063/1.1493229 (3 pages) | Cited 35 times

Online Publication Date: 2 July 2002

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Electroabsorption measurements are reported for wurtzite InGaN/GaN quantum wells. The electroabsorption technique allows exact quantitative analysis of absorption and absorption changes in InGaN quantum wells and barrier layers, with recorded field-induced absorption changes as large as 7000 cm−1 below and almost 20000 cm−1 above the band edge. The technique thus allows precise determination of the strong internal fields that originate from strain-induced polarization and differences in spontaneous polarization. The fields measured on functioning diodes vary between 1.1 and 1.4 MV/cm for indium concentrations in InGaN quantum wells ranging from 7% to 9%. © 2002 American Institute of Physics.
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68.65.Fg Quantum wells
78.20.Jq Electro-optical effects

Electron mobility measurement using exciplex-type organic light-emitting diodes

Y. Kawabe and J. Abe

Appl. Phys. Lett. 81, 493 (2002); http://dx.doi.org/10.1063/1.1494105 (3 pages) | Cited 14 times

Online Publication Date: 2 July 2002

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A method to measure the electron mobility in organics is demonstrated. Bilayer organic light-emitting diodes composed of donor-type and acceptor-type materials often show exciplex emission. We employed a triphenyldiamine derivative and an oxadiazole derivative (PBD) as hole and electron transporters, respectively, and confirmed that the emission is from exciplex. From the transient response of the device after application of pulsed voltage, the electron mobility of neat PBD film was evaluated to be 2.0×10−5 cm2/V s under the electric field of 1 MV/cm. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.50.Dn Low-field transport and mobility; piezoresistance
71.70.-d Level splitting and interactions

Formation of pnp bipolar structure by thermal donors in nitrogen-containing p-type Czochralski silicon wafers

Xiangyang Ma, Xuegong Yu, Ruixin Fan, and Deren Yang

Appl. Phys. Lett. 81, 496 (2002); http://dx.doi.org/10.1063/1.1494466 (3 pages) | Cited 19 times

Online Publication Date: 2 July 2002

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The carrier concentration profile in boron-doped p-type nitrogen-containing Czochralski silicon wafer subjected to a one-step high-temperature (1150 °C) annealing followed by a prolonged 450 °C annealing has been investigated by spreading resistance profile. It is found that the carrier concentration profile is characteristic of a pnp bipolar structure, while, that in the control wafer of p-type conventional Czochralki silicon subjected to the identical thermal treatment is just characteristic of a p-n junction. Moreover, it is suggested that only one-step annealing at high temperatures is an efficient method for intrinsic gettering of a nitrogen-containing Czochralski silicon wafer due to the outdiffusion of oxygen and nitrogen in the near-surface region and the nitrogen-enhanced oxygen precipitation in the bulk region. © 2002 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.Tx Gettering
81.05.Cy Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.Yx Interaction between different crystal defects; gettering effect
81.30.Mh Solid-phase precipitation
61.72.uf Ge and Si
66.30.J- Diffusion of impurities

Growth and characterization of CaF2/Ge/CaF2/Si(111) quantum dots for resonant tunneling diodes operating at room temperature

A. I. Yakimov, A. S. Derjabin, L. V. Sokolov, O. P. Pchelyakov, A. V. Dvurechenskii, M. M. Moiseeva, and N. S. Sokolov

Appl. Phys. Lett. 81, 499 (2002); http://dx.doi.org/10.1063/1.1494465 (3 pages) | Cited 9 times

Online Publication Date: 2 July 2002

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Resonant tunneling diodes were implemented on Ge quantum dots fabricated using Stranski–Krastanov growth mode on CaF2 matrix, lattice matched to Si(111) substrates. The negative differential conductance and conductance oscillations due to hole resonant tunneling through the zero-dimensional states of Ge quantum dots are clearly observed at room temperature. From the period of conductance oscillations, the energy separations between the states of the quantum dots with different sizes are estimated to be 40–50 meV (i.e., >kT = 26 meV at T = 300 K). © 2002 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.07.Ta Quantum dots
85.35.Gv Single electron devices
73.21.La Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
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