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15 Jul 2002

Volume 81, Issue 3, pp. 391-566

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Enhancement of the optical nonlinearity in pseudoisocyanine J aggregates embedded in distributed feedback microcavities

F. Sasaki, S. Kobayashi, and S. Haraichi

Appl. Phys. Lett. 81, 391 (2002); http://dx.doi.org/10.1063/1.1493643 (3 pages) | Cited 7 times

Online Publication Date: 2 July 2002

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Coherent transients of pseudoisocyanine J aggregates in distributed feedback microcavities are reported. Under the resonant excitation of the cavity-mode observed at the low-energy side of the excitonic resonance, the response time is about 0.5 ps, approximately equal to the pump–pulse duration. We find the enhancement of the optical nonlinearity by one order of magnitude in the microcavity. The excitation of the dielectric-band mode is effective to enhance the nonlinearity with the ultrafast response. © 2002 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.65.Pc Optical bistability, multistability, and switching, including local field effects
71.35.-y Excitons and related phenomena

Long-lasting phosphorescence in Sn2+–Cu2+ codoped silicate glass and its high-pressure treatment effect

Jianbei Qiu, Koichi Miyauchi, Yoji Kawamoto, Naoyuki Kitamura, Jianrong Qiu, and Kazuyuki Hirao

Appl. Phys. Lett. 81, 394 (2002); http://dx.doi.org/10.1063/1.1493664 (3 pages) | Cited 3 times

Online Publication Date: 2 July 2002

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Long-lasting phosphorescence was observed at 510 nm in a Sn2+–Cu2+ codoped Na2O–CaO–SiO2 glass at room temperature under UV illumination of 254 nm. When the glass was compressed under 3, 6, and 9 GPa, the phosphorescence shifted to 465 nm and its decay rate became shorter. The optical absorption spectra of the samples changed after compression, showing that the cupric ions were reduced to the cuprous ions. The high-pressure treatment also resulted in a lower-energy shift in the absorption edge. It was suggested that Sn2+ ions act as hole trapping centers, while oxygen vacancies surrounding by Ca2+ ions as well as active sites in the glass matrix, i.e., as electron trapping centers. © 2002 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
81.05.Kf Glasses (including metallic glasses)
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
81.40.Vw Pressure treatment
78.60.-b Other luminescence and radiative recombination
62.50.-p High-pressure effects in solids and liquids
81.40.Tv Optical and dielectric properties related to treatment conditions
78.40.Pg Disordered solids
71.55.Jv Disordered structures; amorphous and glassy solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Room temperature type-II interband cascade laser

Rui Q. Yang, J. L. Bradshaw, J. D. Bruno, J. T. Pham, D. E. Wortman, and R. L. Tober

Appl. Phys. Lett. 81, 397 (2002); http://dx.doi.org/10.1063/1.1494455 (3 pages) | Cited 18 times

Online Publication Date: 2 July 2002

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A mid-IR (3.3–3.5 μm) type-II interband cascade laser has been demonstrated at temperatures up to 300 K in pulsed mode and 150 K in cw mode. Threshold current densities as low as 13.2 A/cm2 and power efficiencies as large as 17% have been achieved under cw conditions at 80 K. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Pk Continuous operation
42.60.By Design of specific laser systems

Influence of leakage current on temperature performance of GaAs/AlGaAs quantum cascade lasers

D. Indjin, P. Harrison, R. W. Kelsall, and Z. Ikonić

Appl. Phys. Lett. 81, 400 (2002); http://dx.doi.org/10.1063/1.1494457 (3 pages) | Cited 24 times

Online Publication Date: 2 July 2002

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A detailed analysis of intersubband electron scattering transport in GaAs/AlGaAs quantum cascade lasers (QCLs) is presented, using a full self-consistent rate equation model. Our approach includes all relevant scattering mechanisms between injector/collector, active region and continuumlike states in the cascade structures. In particular, the influence of the Al mole fraction in the quantum barriers on QCLs performance is investigated, by studying GaAs/AlGaAs structures with 33% and 45% Al barrier compositions, respectively. Excellent qualitative and quantitative agreement with recent experimental results at cryogenic and room temperatures is obtained. The model reproduces the gain saturation reported for the 33% Al device, which precludes laser operation at room temperature, and also the much improved room-temperature performance of the 45% Al device, with calculated 300 K threshold current of 17 kA/cm2, and confirms that the superior performance of the 45% Al device is due to suppression of parasitic conduction through continuum states as a consequence of the increased barrier height. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Amplification of ultrashort laser pulses in the photolytically driven XeF(C–A) active medium

V. I. Tcheremiskine, M. L. Sentis, and L. D. Mikheev

Appl. Phys. Lett. 81, 403 (2002); http://dx.doi.org/10.1063/1.1490403 (3 pages) | Cited 14 times

Online Publication Date: 2 July 2002

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Amplification of ultrashort laser pulses is demonstrated in a gas medium of the photolytical XeF(C–A) laser. A gas mixture of XeF2:N2:Ar was excited by vacuum-ultraviolet radiation produced by a high-current multichannel sliding discharge, which was initiated along one side of dielectric laser cavity. A small-signal gain of 1.6×10−3 cm−1 is observed for a seed pulse at 488 nm with ∼ 150 fs duration. The use of a second optical source together with the device optimization promise a multiple increase in the gain and the obtaining of high-contrast TW femtosecond pulses as a result of direct amplification, without application of a stretching/compression technique. © 2002 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Lt Gas lasers including excimer and metal-vapor lasers

High power and high brightness from an optically pumped InAs/InGaSb type-II midinfrared laser with low confinement

R. Kaspi, A. Ongstad, G. C. Dente, J. Chavez, M. L. Tilton, and D. Gianardi

Appl. Phys. Lett. 81, 406 (2002); http://dx.doi.org/10.1063/1.1493227 (3 pages) | Cited 25 times

Online Publication Date: 2 July 2002

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We report on optically pumped semiconductor lasers emitting near 3.8 μm that exhibit high power and low output divergence. The lasers incorporate multiple InAs/InGaSb/InAs type-II wells imbedded in an InGaAsSb waveguide that is designed to absorb the pump emission. When operated at 85 K, 0.25 mm×2.5 mm broad area devices produce >5 W of peak power under long pulse conditions. Moreover, these extremely bright devices exhibit a fast axis divergence of only ∼ 15° full width at half maximum (FWHM), coupled with a slow axis divergence of ∼ 6° FWHM. The first is due to the reduced optical confinement in the transverse direction, while the latter is attributed to the suppression of filament formation, which is another beneficial consequence of the low optical confinement. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.De Quantum wells
42.60.By Design of specific laser systems
81.07.St Quantum wells
81.05.Ea III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Silicon-based optical waveguide polarizer using photonic band gap

Dengtao Zhao, Bin Shi, Zuimin Jiang, Yongliang Fan, and Xun Wang

Appl. Phys. Lett. 81, 409 (2002); http://dx.doi.org/10.1063/1.1494454 (3 pages) | Cited 3 times

Online Publication Date: 2 July 2002

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Based on different photonic band structures of TE and TM polarization modes in periodic multilayers, a method to realize the waveguide polarizer is proposed. The waveguide structure contains a SiO2 core layer sandwiched between two multilayers of alternately stacked poly-Si and SiO2, and the whole structure can be grown on a Si substrate. Its propagation characteristics are studied theoretically. High extinction ratio over 40 dB at a light wavelength of 1.3 μm is expected in the waveguide of only 40 μm long, accompanied with very low propagation loss of the passive TE mode. These characteristics are very suitable for the applications in integrated optics. The fabrication of this polarizer structure by using the magnetron sputtering method is demonstrated. © 2002 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
42.79.Ci Filters, zone plates, and polarizers
42.50.-p Quantum optics
81.15.Cd Deposition by sputtering
78.66.Db Elemental semiconductors and insulators
81.05.Cy Elemental semiconductors

Room-temperature polariton lasers based on GaN microcavities

Guillaume Malpuech, Aldo Di Carlo, Alexey Kavokin, Jeremy J. Baumberg, Marian Zamfirescu, and Paolo Lugli

Appl. Phys. Lett. 81, 412 (2002); http://dx.doi.org/10.1063/1.1494126 (3 pages) | Cited 82 times

Online Publication Date: 2 July 2002

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The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T = 460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high temperatures, especially in n-doped samples. Thus, GaN microcavities are excellent candidates for realization of room-temperature polariton lasers. © 2002 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
78.67.De Quantum wells
81.05.Ea III-V semiconductors
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.21.Fg Quantum wells
71.35.-y Excitons and related phenomena
03.75.Hh Static properties of condensates; thermodynamical, statistical, and structural properties
03.75.Kk Dynamic properties of condensates; collective and hydrodynamic excitations, superfluid flow
37.10.Vz Mechanical effects of light on atoms, molecules, and ions
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling

Light amplification and gain in polyfluorene waveguides

George Heliotis, Donal D. C. Bradley, Graham A. Turnbull, and Ifor D. W. Samuel

Appl. Phys. Lett. 81, 415 (2002); http://dx.doi.org/10.1063/1.1494473 (3 pages) | Cited 78 times

Online Publication Date: 2 July 2002

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We report a study of the properties of the semiconducting polymer poly(9,9-dioctylfluorene) (PFO) as a gain medium. We demonstrate amplification of blue light via amplified spontaneous emission (ASE) measurements on optically pumped PFO planar asymmetric waveguides. We show that the ASE wavelength can be tuned over a range of 20 nm by altering the supported waveguide modes. Gain/loss measurements at the peak ASE wavelength (466 nm) show that the waveguides can exhibit a large net gain of up to 74 cm−1 and have a very low loss coefficient ∼3 cm−1. These characteristics make PFO attractive as a high gain medium for short-wavelength lasers and optical amplifiers. © 2002 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.70.Jk Polymers and organics
78.45.+h Stimulated emission
42.82.Bq Design and performance testing of integrated-optical systems
42.79.Gn Optical waveguides and couplers
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