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22 Jul 2002

Volume 81, Issue 4, pp. 571-782

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Point-defect influence on 1/f noise in HgCdTe photodiodes

N. Mainzer, E. Lakin, and E. Zolotoyabko

Appl. Phys. Lett. 81, 763 (2002); http://dx.doi.org/10.1063/1.1494118 (3 pages) | Cited 2 times

Online Publication Date: 16 July 2002

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We found experimentally a linear dependence between the 1/f noise power in the HgCdTe photodiodes and the fraction of ionized Hg vacancies in the HgCdTe layer. The number and sign of charge carriers were deduced from Hall measurements. Total point-defect concentrations were extracted by using a combination of high-resolution x-ray diffraction for precise measurements of lattice parameters and Fourier transform infrared transmission for determination the Cd content. Experimental findings support the theoretical model recently developed by Grüneis [F. Grüneis, Physica A 282, 108 (2000); 290, 512 (2001)]. © 2002 American Institute of Physics.
Show PACS
85.60.Dw Photodiodes; phototransistors; photoresistors
72.70.+m Noise processes and phenomena
85.30.De Semiconductor-device characterization, design, and modeling
61.72.J- Point defects and defect clusters
81.05.Dz II-VI semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
78.30.Fs III-V and II-VI semiconductors

Metal/AlQ3 interface structures

A. Turak, D. Grozea, X. D. Feng, Z. H. Lu, H. Aziz, and A. M. Hor

Appl. Phys. Lett. 81, 766 (2002); http://dx.doi.org/10.1063/1.1494470 (3 pages) | Cited 20 times

Online Publication Date: 16 July 2002

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X-ray photoelectron core level spectroscopy has been used to probe the buried metal (Au, Ag, Mg, Mg:Agalloy)/AlQ3 interface structures from working organic light-emitting diodes. It is found that there is no chemical reaction between (Au,Ag)/AlQ3 interfaces, while there is a significant reaction/diffusion at (Mg,Mg:Ag)/AlQ3 interfaces. The reaction is AlQ3 oxidation-reduction reaction in nature, and is well explained by thermodynamic consideration of equivalent type of reaction. The reaction involves formation of MgO, metallic Al and fragmented hydroxyquinolines, gaseous N, and then followed by metallic Mg diffusion to the interface and metallic Al diffusion into the metal cathodes. © 2002 American Institute of Physics.
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68.35.Ct Interface structure and roughness
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
79.60.Jv Interfaces; heterostructures; nanostructures
85.60.Jb Light-emitting devices

Light up-conversion from near-infrared to blue using a photoresponsive organic light-emitting device

Masayuki Chikamatsu, Yoshiro Ichino, Noriyuki Takada, Manabu Yoshida, Toshihide Kamata, and Kiyoshi Yase

Appl. Phys. Lett. 81, 769 (2002); http://dx.doi.org/10.1063/1.1495881 (3 pages) | Cited 17 times

Online Publication Date: 16 July 2002

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A photoresponsive organic light-emitting device combining blue-emitting organic electroluminescent (EL) diode with titanyl phthalocyanine as a near-infrared (IR) sensitive layer was fabricated. By irradiating near-IR light to the device, blue emission occurred in the lower drive voltage (between 5 and 12 V). The result indicates that the device acts as a light switch and/or an up-converter from near-IR light (1.6 eV) to blue (2.6 eV). The EL response times of rise and decay using a near-IR light trigger were 260 and 330 μs, respectively. At a higher voltage (above 12 V), enhancement of blue emission was observed with near-IR light irradiation. The ON/OFF ratio reached a maximum of 103. © 2002 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
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