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22 Jul 2002

Volume 81, Issue 4, pp. 571-782

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Switch using d-wave symmetry of YBa2Cu3O7−δ Josephson junction

Youichi Enomoto, Tomohiro Nishihara, Hiroaki Myouren, and Susumu Takada

Appl. Phys. Lett. 81, 682 (2002); http://dx.doi.org/10.1063/1.1494108 (3 pages)

Online Publication Date: 16 July 2002

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Switching functions using a parallel connection of conventional-type and π-type junctions have been investigated. Both junctions consist of Nb/Au/YBa2Cu3O7−δ Josephson junctions on YBa2Cu3O7−δ edges, whose faces are (110) and (100). The modulation patterns of critical currents in low magnetic fields indicate that the d-wave component is dominant: the (100) junctions exhibit the conventional type, but the (110) junctions the π type. Superconducting current path is alternated between the conventional junction and the π junction by applied magnetic fields using these anisotropic magnetic field dependences of the critical current. © 2002 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.72.-h Cuprate superconductors
74.25.Sv Critical currents

Interfacial structure of epitaxial MgB2 thin films grown on (0001) sapphire

W. Tian, X. Q. Pan, S. D. Bu, D. M. Kim, J. H. Choi, S. Patnaik, and C. B. Eom

Appl. Phys. Lett. 81, 685 (2002); http://dx.doi.org/10.1063/1.1489101 (3 pages) | Cited 15 times

Online Publication Date: 16 July 2002

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The microstructure and interfacial atomic structure of MgB2 thin films fabricated on the (0001) Al2O3 substrate were characterized by transmission electron microscopy. It was found that the MgB2 films grow epitaxially on the substrate with an orientation relationship with respect to the substrate as: (0001)MgB2∥(0001)Al2O3 and [11math0]MgB2∥[10math0]Al2O3. At the film/substrate interface, both MgO and MgAl2O4 phases were observed, which also grow epitaxially on the (0001) Al2O3 substrate. The formation of these intermediate phases is ascribed to the existence of oxygen during the annealing. © 2002 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
68.35.Ct Interface structure and roughness
68.37.Lp Transmission electron microscopy (TEM)
68.55.A- Nucleation and growth

Transmission electron microscopy evidence for phase transformation from Bi2Sr2CuO6 to Bi2Sr2Ca2Cu3O10

W. M. Chen, G. Li, S. S. Jiang, H. Y. Ling, P. Yao, M. J. Qin, H. K. Liu, and S. X. Dou

Appl. Phys. Lett. 81, 688 (2002); http://dx.doi.org/10.1063/1.1492856 (3 pages) | Cited 4 times

Online Publication Date: 16 July 2002

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The growth mechanism of the Bi-2223 phase was studied using multifilamentary Ag/Bi-2223 tapes manufactured by the powder-in-tube method. X-ray powder diffraction was performed to analyze the developments of Bi-2201, Bi-2212, and Bi-2223 phases during sintering periods at high temperatures. Transmission electron microscopy (TEM) was used to investigate the growth mechanism of the 2223 phase. TEM images indicated that 2201 and Ca2CuO3 crystals come together to form platelets of 2223. The structural phase transformation established a structural frame of the 2223 crystal. There were some vacant defects retaining in the established 2223 crystal cells at copper and oxygen sites after the phase transformation, and the Cu/O compound at high temperatures would diffuse into 2223 cells and occupy the corresponding vacancies to complete the 2223 crystal structure. The present work provides an evidence for growing the 2223 phase from the 2201 phase and Ca2CuO3 in the samples studied. © 2002 American Institute of Physics.
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74.72.-h Cuprate superconductors
84.71.Mn Superconducting wires, fibers, and tapes
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
64.70.K- Solid-solid transitions
64.75.-g Phase equilibria
66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters

Strong wave-vector filtering and nearly 100% spin polarization through resonant tunneling antisymmetrical magnetic structure

H. Z. Xu and Z. Shi

Appl. Phys. Lett. 81, 691 (2002); http://dx.doi.org/10.1063/1.1495541 (3 pages) | Cited 31 times

Online Publication Date: 16 July 2002

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Strong spin- and wave-vector dependent upon electron resonant tunneling through antisymmetrical double-barrier magnetic structures are revealed. The electron transmission probability and the polarization of transmitted beams as a function of incident electron energy for different structures have been calculated. It is shown that the antisymmetric magnetic structure possesses the strongest spin polarization and well-pronounced wave-vector filtering properties. Surprisingly, a polarization of nearly 100% can be achieved by spin-dependent resonant tunneling in these structures, although the average magnetic field of the structures is zero. © 2002 American Institute of Physics.
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72.25.Mk Spin transport through interfaces
73.23.Hk Coulomb blockade; single-electron tunneling
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.40.Gk Tunneling
85.75.Mm Spin polarized resonant tunnel junctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Spin-polarized light-emitting diode using metal/insulator/semiconductor structures

T. Manago and H. Akinaga

Appl. Phys. Lett. 81, 694 (2002); http://dx.doi.org/10.1063/1.1496493 (3 pages) | Cited 51 times

Online Publication Date: 16 July 2002

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We have succeeded in growing ferromagnetic metals (Co,Fe,andNiFe)/Al2O3/AlGaAs heterostructures with homogeneous flat interfaces. The electroluminescence from a light-emitting diode with a metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode. This fact shows that a spin injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1% at room temperature. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
72.25.Hg Electrical injection of spin polarized carriers
72.25.Mk Spin transport through interfaces
78.60.Fi Electroluminescence
81.05.Ea III-V semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
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